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公开(公告)号：US20130240336A1
公开(公告)日：2013-09-19
申请号：US13891568
申请日：2013-05-10
CPC分类号： B81B3/0097 , B81C1/0015 , H01H59/0009 , Y10T29/49105
摘要： Structures having a hybrid MEMS RF switch and method of fabricating such structures using existing wiring layers of a device is provided. The method of manufacturing a MEMS switch includes forming a forcing electrode from a lower wiring layer of a device and forming a lower electrode from an upper wiring layer of the device. The method further includes forming a flexible cantilever arm over the forcing electrode and the lower electrode such that upon application of a voltage to the forcing electrode, the flexible cantilever arm will contact the lower electrode to close the MEMS switch.
摘要翻译： 提供具有混合MEMS RF开关的结构和使用设备的现有布线层制造这种结构的方法。 制造MEMS开关的方法包括从器件的下布线层形成强制电极，并从器件的上布线层形成下电极。 该方法还包括在强制电极和下电极上形成柔性悬臂，使得在对强制电极施加电压时，柔性悬臂将接触下电极以闭合MEMS开关。
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32.发明申请公开(公告)号：US20200024127A1
公开(公告)日：2020-01-23
申请号：US16587185
申请日：2019-09-30
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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33.发明申请公开(公告)号：US20190315619A1
公开(公告)日：2019-10-17
申请号：US16448533
申请日：2019-06-21
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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34.发明申请公开(公告)号：US20190152767A1
公开(公告)日：2019-05-23
申请号：US16239132
申请日：2019-01-03
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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35.发明申请公开(公告)号：US20180257931A1
公开(公告)日：2018-09-13
申请号：US15973958
申请日：2018-05-08
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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36.发明申请公开(公告)号：US20180244514A1
公开(公告)日：2018-08-30
申请号：US15957058
申请日：2018-04-19
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：US20180065847A1
公开(公告)日：2018-03-08
申请号：US15807661
申请日：2017-11-09
CPC分类号： B81C1/00698 , B81C1/0015 , B81C1/00166 , B81C1/00523 , B81C2201/0132 , B81C2201/0133 , B81C2201/0145 , B81C2201/0154 , B81C2203/0145 , H01H1/0036 , H01H1/58 , H01H11/00 , H01H49/00 , H01H59/00 , H01H59/0009 , H01H2059/0018 , Y10T29/49105
摘要： An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first electrode, forming a second cantilevered electrode over a second electrode and operable to directly contact the first cantilevered electrode upon an application of a voltage to at least one of the first electrode and a second electrode, and the first cantilevered electrode includes an arm with an extending protrusion which extends upward from an upper surface of the arm.
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公开(公告)号：US20170148672A1
公开(公告)日：2017-05-25
申请号：US15425005
申请日：2017-02-06
IPC分类号： H01L21/768 , H01L23/532 , H01L23/522
CPC分类号： H01L21/2885 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/288 , H01L21/32053 , H01L21/76802 , H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L21/76883 , H01L21/76885 , H01L21/76886 , H01L21/76898 , H01L21/78 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53209 , H01L23/53238 , H01L23/585 , H01L24/95 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.
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39.发明申请公开(公告)号：US20170133185A1
公开(公告)日：2017-05-11
申请号：US15406134
申请日：2017-01-13
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.
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公开(公告)号：US20160284645A1
公开(公告)日：2016-09-29
申请号：US15178893
申请日：2016-06-10
IPC分类号： H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L21/2885 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/288 , H01L21/32053 , H01L21/76802 , H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L21/76883 , H01L21/76885 , H01L21/76886 , H01L21/76898 , H01L21/78 , H01L23/485 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53209 , H01L23/53238 , H01L23/585 , H01L24/95 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.
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