公开(公告)号：US5317161A

公开(公告)日：1994-05-31

申请号：US888661

申请日：1992-05-21

Applicant: Alfred Chalupka ,  Gertraud Lammer ,  Gerhard Stengl ,  Peter Wolf ,  Johannes Fegerl

Inventor： Alfred Chalupka ,  Gertraud Lammer ,  Gerhard Stengl ,  Peter Wolf ,  Johannes Fegerl

IPC: G03F7/20 ,  H01J27/02 ,  H01J27/10 ,  H01J37/08 ,  H01J37/12 ,  H01L21/027

CPC classification number: H01J27/10 ,  H01J37/08 ,  H01J37/12

Abstract: In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.

Abstract translation: 除了等离子体室之后的单能透镜的三个电极之外，用于离子束光刻或离子束半导体等的离子源具有与第二电极处于相同电位并且具有比第二电极低的电位的第四电极 第一和第三电极的电位结果是提高了分辨率。

公开(公告)号：US4967088A

公开(公告)日：1990-10-30

申请号：US201959

申请日：1988-06-02

Applicant: Gerhard Stengl ,  Hans Loschner ,  Ernst Hammell ,  Hilton F. Glavish

Inventor： Gerhard Stengl ,  Hans Loschner ,  Ernst Hammell ,  Hilton F. Glavish

IPC: H01L21/30 ,  G03F9/02 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/1516 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: In an ion projection lithography system, apparatus and methods for positioning on a substrate or wafer at a target station an image of structures provided on a mask, wherein the mask includes reference marks to provide ion reference beams about the image field, the target station includes marks and the beam of the system is controlled to establish a coincidence of the marks on the mask with the corresponding marks at the target station. The ion projection system shown includes in this optical path an electrostatic multipole, means for rotational adjustment of the image relative to the substrate, and means for correcting the scale of the image. Embodiments are shown in which the marks at the target station are carried on the wafer or on a reference block which is positionally related to the wafer, e.g., by an interferometer. In the case of the reference block, it has an aperture corresponding in size to the mask image to be formed on the substrate so that the marks are disposed outside the optical path used to generate the image on the substrate. Detectors provided for secondary radiation emitted by the marks at the target station as a result of the ion reference beams passing through the marks on the mask produce signals that control the multipole, the means for relative rotational adjustment of the image on the substrate and the means for scale correction. Special masks are provided that enable the reference beams to reach their respective marks at the target station during blanking and unblanking of the mask, permitting operation of the alignment system at both times. The reference beams are shielded from the image beam and are scanned repeatedly over their respective marks at the target station.

Abstract translation: 在离子投影光刻系统中，用于在目标站上在基板或晶片上定位设置在掩模上的结构的图像的装置和方法，其中所述掩模包括用于提供关于图像场的离子参考光束的参考标记，所述目标站包括 控制系统的标记和光束，以使掩模上的标记与目标工位的相应标记重合。 所示的离子投影系统在该光路中包括静电多极，用于相对于衬底旋转调整图像的装置，以及用于校正图像尺度的装置。 示出了实施例，其中目标站处的标记被承载在晶片上或者例如通过干涉仪位于与晶片相关的参考块上。 在参考块的情况下，其具有对应于要在衬底上形成的掩模图像的尺寸的孔，使得标记设置在用于在衬底上产生图像的光路的外侧。 由于通过掩模上的标记的离子参考光束，由目标台上的标记发射的二次辐射的检测器产生控制多极的信号，用于基板上的图像的相对旋转调整的装置和装置 用于刻度校正。 提供特殊掩模，使得参考光束能够在掩模的遮蔽和非曝光期间在目标工位达到其各自的标记，从而允许两次对准系统的操作。 参考光束与图像束屏蔽，并在目标工位上重复扫描它们各自的标记。

公开(公告)号：US4924104A

公开(公告)日：1990-05-08

申请号：US244786

申请日：1988-09-09

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/74 ,  H01J37/30 ,  H01L21/027

CPC classification number: G03F1/74 ,  H01J37/3005 ,  H01J37/3007

Abstract: The invention concerns an ion beam apparatus, by means of which defects in a substrate can be recognized, and repaired under continuous control. For this purpose, the ion beam apparatus, in its beams path, after the ion source, is equipped with a mask exhibiting a preferrably circular hole and between ion source and mask with a controllable lens for the purpose of modification of the divergence angle under which the beam strikes the mask. The aperture of the mask is imaged upon the substrate. In this way the intensity of the ion beam may be varied for use in inspecting a substrate for defects and subsequently removing the detected defects.

Abstract translation: 本发明涉及一种离子束装置，通过该离子束装置可以识别基板中的缺陷并在连续控制下进行修复。 为此，离子束装置在离子源之后的光束路径上配备有显示出优选圆形孔的掩模，并且具有可控透镜的离子源与掩模之间，用于改变发散角的目的 光束撞击面罩。 掩模的孔径被成像在基底上。 以这种方式，可以改变离子束的强度以用于检查衬底的缺陷并随后去除检测到的缺陷。

公开(公告)号：US20090140160A1

公开(公告)日：2009-06-04

申请号：US11988922

申请日：2006-07-20

Applicant: Elmar Platzgummer ,  Gerhard Stengl

Inventor： Elmar Platzgummer ,  Gerhard Stengl

IPC: H01J3/14

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0435

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

Abstract translation: 用于使用带电粒子的多光束施加的光束操纵装置包括具有由带电粒子束穿过的多个孔的多孔板。 加热多孔板的框架部分以降低多孔板内的温度梯度。 此外，考虑到降低温度梯度，与其他区域相比，多孔板的表面的发热率在一些区域可能更高。

公开(公告)号：US06909103B2

公开(公告)日：2005-06-21

申请号：US10886463

申请日：2004-07-07

Applicant: Elmar Platzgummer ,  Gerhard Stengl ,  Hans Loeschner

Inventor： Elmar Platzgummer ,  Gerhard Stengl ,  Hans Loeschner

IPC: G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/145

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/04735

Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

Abstract translation: 一种用于通过能量带电粒子的光束（2）照射目标物体的粒子束曝光装置（1）包括：用于将所述粒子产生并形成为定向光束（21）的照明系统（101） ; 位于照明系统之后的图案定义装置（102），用于定位在定向光束的路径中对颗粒透明的孔的图案，从而形成从图案定义装置通过孔排出的图案化的束（22）; 以及位于图案定义装置（102）之后的投影系统（103），用于将图案化的光束（22）投影到位于投影系统之后的目标（41）上。 该装置还包括加速/减速装置（32），该加速/减速装置（32）包含电位梯度，该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

公开(公告)号：US06858118B2

公开(公告)日：2005-02-22

申请号：US10395572

申请日：2003-03-24

Applicant: Elmar Platzgummer ,  Hans Löschner ,  Gerhard Stengl

Inventor： Elmar Platzgummer ,  Hans Löschner ,  Gerhard Stengl

IPC: C23C14/04 ,  C23C14/32 ,  C23C14/34 ,  C23C14/46 ,  C23C14/54 ,  G03F1/00 ,  H01J37/317 ,  H01L21/027

CPC classification number: C23C14/547 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/82 ,  H01J37/3174 ,  H01J2237/31755 ,  H01J2237/31788 ,  H01J2237/31794

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract translation: 用于掩模离子束光刻的装置包括用于延长模板掩模寿命的掩模维护模块。 该模块包括用于将材料沉积到由光刻光束照射的掩模侧面的沉积装置，其中至少一个沉积源位于掩模的前面，并且还包括溅射装置，其中定位至少一个溅射源 在掩模保持器装置的前面并且在光刻光束的路径之外，产生指向掩模的溅射离子束，以便在扫描过程中从所述掩模溅射材料并补偿沉积的不均匀性。

公开(公告)号：US20050012052A1

公开(公告)日：2005-01-20

申请号：US10886463

申请日：2004-07-07

Applicant: Elmar Platzgummer ,  Gerhard Stengl ,  Hans Loeschner

Inventor： Elmar Platzgummer ,  Gerhard Stengl ,  Hans Loeschner

IPC: G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/04735

Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

Abstract translation: 一种用于通过能量带电粒子的光束（2）照射目标物体的粒子束曝光装置（1）包括：用于将所述粒子产生并形成为定向光束（21）的照明系统（101） ; 位于照明系统之后的图案定义装置（102），用于定位在定向光束的路径中对颗粒透明的孔的图案，从而形成从图案定义装置通过孔排出的图案化的束（22）; 以及位于图案定义装置（102）之后的投影系统（103），用于将图案化的光束（22）投影到位于投影系统之后的目标（41）上。 该装置还包括加速/减速装置（32），该加速/减速装置（32）包含电位梯度，该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

公开(公告)号：US06194730B1

公开(公告)日：2001-02-27

申请号：US09186865

申请日：1998-11-05

Applicant: Alfred Chalupka ,  Gerhard Stengl

Inventor： Alfred Chalupka ,  Gerhard Stengl

IPC: H01J3712

CPC classification number: H01J37/12 ,  H01J2237/153 ,  H01J2237/31755

Abstract: Electrostatic lens for focussing the beams of charged particles, more particularly of ions, which have electrodes being designed as an electric conductor with a ring-shaped section, the inner edge of which is essentially circular, whereas at least one of the electrodes is composed of sector areas (4) succeeding one another along the periphery of an electrode, whereas each sector area is covering one predetermined angle area of the periphery, the sector areas are electrically connected to one another and the sector areas are linked to the holding device via at least one adjusting element per sector area the position of the sector areas may be adjusted irrespective of the other sector areas by means of the adjusting elements during operation of the electrostatic lens. The sector areas may be mechanically separated or extend from one thickness minimum of an electrode cross-section with periodically varying thickness to the next one.

Abstract translation: 用于聚焦带电粒子束，更特别是离子的静电透镜，其具有设计成具有环形截面的电导体的电极，其内边缘基本上是圆形的，而至少一个电极由 扇形区域（4）沿着电极的周边彼此相继，其中扇区区域覆盖周边的一个预定角度区域，扇区区域彼此电连接，并且扇区区域经由至少一个连接到保持装置 可以在静电透镜的操作期间通过调节元件调节扇区区域的调整元件的位置，而不考虑其它扇区面积。扇区区域可以机械地分离或从电极交叉的一个最小厚度延伸， 具有周期性变化的厚度到下一个。

公开(公告)号：US5801388A

公开(公告)日：1998-09-01

申请号：US669481

申请日：1996-09-17

Applicant: Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

Inventor： Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

IPC: H01J37/12 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027

CPC classification number: H01J37/3007 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/04928 ,  H01J2237/31755

Abstract: A particle beam, in particular in ionic on the reproduction system, preferably for lithographic purposes, has a particle source, in particular an ion source for reproducing on a wafer a structure designed in a masking foil as one or several transparent spots, in particular openings, through at least two electrostatic lenses arranged upstream of the wafer. One of the lenses is a grating lens constituted by one or two tubular electrodes and by a perforated plate arranged in the path of the beam perpendicularly to the optical axis. The plate is formed by a masking foil which forms the central or first electrode of the granting lens, in the direction of propagation of the beam.

Abstract translation: PCT No.PCT / AT95 / 00003 Sec。 371日期1996年9月17日 102（e）1996年9月17日PCT 1995年1月12日PCT PCT。 公开号WO95 / 19637 日期1995年7月20日粒子束，特别是在再生系统上的离子，优选用于光刻目的，具有粒子源，特别是用于在晶片上再现设计在掩模箔中的结构作为一个或多个透明的离子源 斑点，特别是开口，通过布置在晶片上游的至少两个静电透镜。 其中一个透镜是由一个或两个管状电极和布置在垂直于光轴的光束路径中的多孔板构成的光栅透镜。 该板由掩模箔形成，该掩模箔沿着光束的传播方向形成准许透镜的中心或第一电极。

公开(公告)号：US4835392A

公开(公告)日：1989-05-30

申请号：US123128

申请日：1987-11-20

Applicant: Hans Loschner ,  Gerhard Stengl

Inventor： Hans Loschner ,  Gerhard Stengl

IPC: H01J37/08 ,  H01J37/12 ,  H01J37/147 ,  H01J37/30

CPC classification number: H01J37/1477 ,  H01J37/3007

Abstract: An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

Abstract translation: 一种离子投射装置，其在离子源和掩模之间具有直接接近掩模的至少一个离子光学校正元件，其具有至少八个极点的多极形式，并且位于两者之间， 八极和面具。