Ion irradiation of a target at very high and very low kinetic ion energies
    31.
    发明授权
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US06909103B2

    公开(公告)日:2005-06-21

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Apparatus for enhancing the lifetime of stencil masks
    32.
    发明授权
    Apparatus for enhancing the lifetime of stencil masks 有权
    用于增加模板掩模寿命的装置

    公开(公告)号:US06858118B2

    公开(公告)日:2005-02-22

    申请号:US10395572

    申请日:2003-03-24

    Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

    Abstract translation: 用于掩模离子束光刻的装置包括用于延长模板掩模寿命的掩模维护模块。 该模块包括用于将材料沉积到由光刻光束照射的掩模侧面的沉积装置,其中至少一个沉积源位于掩模的前面,并且还包括溅射装置,其中定位至少一个溅射源 在掩模保持器装置的前面并且在光刻光束的路径之外,产生指向掩模的溅射离子束,以便在扫描过程中从所述掩模溅射材料并补偿沉积的不均匀性。

    Ion irradiation of a target at very high and very low kinetic ion energies
    33.
    发明申请
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US20050012052A1

    公开(公告)日:2005-01-20

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Maskless particle-beam system for exposing a pattern on a substrate
    34.
    发明授权
    Maskless particle-beam system for exposing a pattern on a substrate 有权
    用于在衬底上露出图案的无掩模粒子束系统

    公开(公告)号:US06768125B2

    公开(公告)日:2004-07-27

    申请号:US10337903

    申请日:2003-01-08

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/045 H01J37/3174

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Abstract translation: 一种用于限定用于粒子束曝光设备(100)的图案的设备(102),所述设备适于用带电粒子的光束(lb,pb)照射,并且仅使光束通过多个 的孔径包括孔径阵列装置(203)和消隐装置(202)。 孔径阵列装置(203)具有限定子束(bm)形状的相同形状的多个孔(21,230)。 消隐装置(202)用于切断所选子束的通过; 它具有多个开口(220),每个开口对应于孔阵列装置(203)的相应孔径(230),并且设置有偏转装置(221),该偏转装置可控制,以使通过开口辐射的颗粒偏离其路径(p1 )到所述曝光装置(100)内的吸收表面。 孔(21)布置在由多个交错的孔(p1)组成的图案定义区域(pf)内的消隐和孔径阵列装置(202,203)上。 线(p1)中的每一个交替地包括没有孔的第一段(sf)和第二段(af),每个段包括通过行偏移(pm)间隔开的多个孔,所述行偏移是 孔的宽度(w),所述第一段(sf)的长度(A)大于行偏移。 在沿着该粒子束的方向观察的消隐装置(202)的前面,提供具有多个开口(210)的盖装置(201),每个开口对应于消隐装置的相应开口(230) 具有比消隐阵列装置的开口(220)的宽度(w2)小的宽度(w1)。

    Electrostatic lens
    35.
    发明授权
    Electrostatic lens 失效
    静电镜片

    公开(公告)号:US06194730B1

    公开(公告)日:2001-02-27

    申请号:US09186865

    申请日:1998-11-05

    CPC classification number: H01J37/12 H01J2237/153 H01J2237/31755

    Abstract: Electrostatic lens for focussing the beams of charged particles, more particularly of ions, which have electrodes being designed as an electric conductor with a ring-shaped section, the inner edge of which is essentially circular, whereas at least one of the electrodes is composed of sector areas (4) succeeding one another along the periphery of an electrode, whereas each sector area is covering one predetermined angle area of the periphery, the sector areas are electrically connected to one another and the sector areas are linked to the holding device via at least one adjusting element per sector area the position of the sector areas may be adjusted irrespective of the other sector areas by means of the adjusting elements during operation of the electrostatic lens. The sector areas may be mechanically separated or extend from one thickness minimum of an electrode cross-section with periodically varying thickness to the next one.

    Abstract translation: 用于聚焦带电粒子束,更特别是离子的静电透镜,其具有设计成具有环形截面的电导体的电极,其内边缘基本上是圆形的,而至少一个电极由 扇形区域(4)沿着电极的周边彼此相继,其中扇区区域覆盖周边的一个预定角度区域,扇区区域彼此电连接,并且扇区区域经由至少一个连接到保持装置 可以在静电透镜的操作期间通过调节元件调节扇区区域的调整元件的位置,而不考虑其它扇区面积。扇区区域可以机械地分离或从电极交叉的一个最小厚度延伸, 具有周期性变化的厚度到下一个。

    Particle beam, in particular ionic optic imaging system
    36.
    发明授权
    Particle beam, in particular ionic optic imaging system 失效
    粒子束,特别是离子光学成像系统

    公开(公告)号:US5801388A

    公开(公告)日:1998-09-01

    申请号:US669481

    申请日:1996-09-17

    Abstract: A particle beam, in particular in ionic on the reproduction system, preferably for lithographic purposes, has a particle source, in particular an ion source for reproducing on a wafer a structure designed in a masking foil as one or several transparent spots, in particular openings, through at least two electrostatic lenses arranged upstream of the wafer. One of the lenses is a grating lens constituted by one or two tubular electrodes and by a perforated plate arranged in the path of the beam perpendicularly to the optical axis. The plate is formed by a masking foil which forms the central or first electrode of the granting lens, in the direction of propagation of the beam.

    Abstract translation: PCT No.PCT / AT95 / 00003 Sec。 371日期1996年9月17日 102(e)1996年9月17日PCT 1995年1月12日PCT PCT。 公开号WO95 / 19637 日期1995年7月20日粒子束,特别是在再生系统上的离子,优选用于光刻目的,具有粒子源,特别是用于在晶片上再现设计在掩模箔中的结构作为一个或多个透明的离子源 斑点,特别是开口,通过布置在晶片上游的至少两个静电透镜。 其中一个透镜是由一个或两个管状电极和布置在垂直于光轴的光束路径中的多孔板构成的光栅透镜。 该板由掩模箔形成,该掩模箔沿着光束的传播方向形成准许透镜的中心或第一电极。

    Ion-projection apparatus
    37.
    发明授权
    Ion-projection apparatus 失效
    离子投影装置

    公开(公告)号:US4835392A

    公开(公告)日:1989-05-30

    申请号:US123128

    申请日:1987-11-20

    CPC classification number: H01J37/1477 H01J37/3007

    Abstract: An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

    Abstract translation: 一种离子投射装置,其在离子源和掩模之间具有直接接近掩模的至少一个离子光学校正元件,其具有至少八个极点的多极形式,并且位于两者之间, 八极和面具。

    Process for making a transmission mask
    38.
    发明授权
    Process for making a transmission mask 失效
    制作传输掩码的过程

    公开(公告)号:US4780382A

    公开(公告)日:1988-10-25

    申请号:US930812

    申请日:1986-11-13

    CPC classification number: G03F1/20 Y10S430/167

    Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.

    Abstract translation: 本发明是一种制造透射掩模的方法,该透射掩模可用于通过两层电镀沉积形成掩模结构,另一种覆盖掩模中的开口的栅格结构,以加法或减法的方式构造半导体衬底 结构体。 结构的厚度可自由选择自调节(在已知工程方法的限度内)。 目的是生产在掩模表面上方具有恒定有效厚度的透射掩模。

    Self-supporting mask, method for production as well as use of same
    39.
    发明授权
    Self-supporting mask, method for production as well as use of same 失效
    自支撑面膜,生产方法以及使用方法

    公开(公告)号:US4370556A

    公开(公告)日:1983-01-25

    申请号:US217064

    申请日:1980-12-16

    CPC classification number: G03F1/20 G03F7/70691 G03F7/708 G21K1/10

    Abstract: Mask for use in the treatment of substrates with an image-forming medium. The mask foil is thermally prestressed by the frame at the temperature of use. For this purpose, the material of the frame has a higher coefficient of thermal expansion than the material of the mask foil. A method of manufacturing such masks includes the step wherein the mask foil is mounted in the frame at a temperature which lies below the temperature of use.

    Abstract translation: 用于用成像介质处理底物的掩模。 掩模箔在使用温度下由框架预热。 为此,框架的材料具有比掩模箔的材料更高的热膨胀系数。 制造这种掩模的方法包括以下步骤:其中掩模箔以低于使用温度的温度安装在框架中。

    Charged-particle exposure apparatus
    40.
    发明授权
    Charged-particle exposure apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US07737422B2

    公开(公告)日:2010-06-15

    申请号:US11816353

    申请日:2006-02-16

    Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    Abstract translation: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

Patent Agency Ranking