公开(公告)号：US20220403505A1

公开(公告)日：2022-12-22

申请号：US17348849

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Annamalai LAKSHMANAN ,  Jacqueline S. WRENCH ,  Feihu WANG ,  Yixiong YANG ,  Joung Joo LEE ,  Srinivas GANDIKOTA ,  Sang-heum KIM ,  Zhebo CHEN ,  Gang SHEN

IPC: C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  C23C14/16 ,  C23C16/455 ,  C23C16/42 ,  C23C14/06 ,  C23C16/56 ,  C23C14/02 ,  C23C14/58

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

公开(公告)号：US20220328308A1

公开(公告)日：2022-10-13

申请号：US17843541

申请日：2022-06-17

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG ,  Steven C. H. HUNG

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67

Abstract: A method of forming a high-κ dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-κ dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-κ dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-κ dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US20220238680A1

公开(公告)日：2022-07-28

申请号：US17528863

申请日：2021-11-17

Applicant: Applied Materials, Inc.

Inventor： Steven C. H. HUNG ,  Benjamin COLOMBEAU ,  Myungsun KIM ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L29/06

Abstract: A method of forming a gate stack structure includes forming a dipole metal layer on a high-κ gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-κ gate dielectric layer.

公开(公告)号：US20200083056A1

公开(公告)日：2020-03-12

申请号：US16682154

申请日：2019-11-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Yingli RAO ,  Srinivas GANDIKOTA

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L21/321 ,  C23C16/455 ,  C23C28/00 ,  C23C16/40 ,  C23C16/50 ,  H01L21/3205 ,  H01L27/11578

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US20180358222A1

公开(公告)日：2018-12-13

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOZHIZAWA ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20

CPC classification number: H01L21/02115 ,  C23C16/272 ,  C23C16/505 ,  C23C16/56 ,  G03F7/70033 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/6831 ,  H01L27/11551 ,  H01L27/11578

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US20170372953A1

公开(公告)日：2017-12-28

申请号：US15633366

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Kelvin CHAN ,  Hien Minh LE ,  Sanjay KAMATH ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Karthik JANAKIRAMAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28506 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/505 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76876 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20150093891A1

公开(公告)日：2015-04-02

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract translation: 提供了在半导体器件的特征定义中沉积金属层的方法。 在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。 该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底 到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

公开(公告)号：US20140011354A1

公开(公告)日：2014-01-09

申请号：US13956969

申请日：2013-08-01

Applicant: Applied Materials, Inc.

Inventor： Yu LEI ,  Xinyu FU ,  Anantha SUBRAMANI ,  Seshadri GANGULI ,  Srinivas GANDIKOTA

IPC: H01L21/02

CPC classification number: H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

Abstract translation: 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。