公开(公告)号：US20240266163A1

公开(公告)日：2024-08-08

申请号：US18606621

申请日：2024-03-15

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG ,  Steven C. H. HUNG

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67

CPC classification number: H01L21/02247 ,  H01L21/02043 ,  H01L21/02274 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/67023 ,  H01L21/67207

Abstract: A method of forming a high-κ dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-κ dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-κ dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-κ dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US20220262629A1

公开(公告)日：2022-08-18

申请号：US17729643

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG ,  Steven C. H. HUNG

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67

Abstract: A method of forming a high-κ dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-κ dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-κ dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-κ dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US20220108916A1

公开(公告)日：2022-04-07

申请号：US17490530

申请日：2021-09-30

Applicant: Applied Materials, Inc.

Inventor： Yixiong YANG ,  Seshadri GANGULI ,  Srinivas GANDIKOTA ,  Yong YANG ,  Jacqueline S. WRENCH ,  Luping LI

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/477

Abstract: A method of forming a contact structure in a semiconductor device having a feature includes forming a barrier layer in the feature, wherein the barrier layer is TiN; and forming a metal layer in the feature and over the barrier layer, wherein the metal layer is at least one of aluminum (Al), ruthenium (Ru), or molybdenum (Mo).

公开(公告)号：US20210111020A1

公开(公告)日：2021-04-15

申请号：US16951858

申请日：2020-11-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG ,  Steven C. H. HUNG

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67

Abstract: A method of forming a high-K dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-K dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-K dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-K dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US20230377901A1

公开(公告)日：2023-11-23

申请号：US18139382

申请日：2023-04-26

Applicant: Applied Materials, Inc.

Inventor： Steven C. H. HUNG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong YANG

IPC: H01L21/3115 ,  H01L21/311

CPC classification number: H01L21/3115 ,  H01L21/31144 ,  H01L21/31111

Abstract: A method of forming a structure on a substrate is provided. The method includes depositing a dipole dopant containing (DDC) layer including a dipole dopant on a first and second region of a dielectric layer (DL) of the substrate. A hardmask (HM) is deposited over the DDC deposited on the first and the second regions. A patterned photoresist layer (PR) is formed over the HM. The PR includes a first portion that is positioned over the first region and an opening that is positioned to expose a portion of the HM that is disposed over the second region of the substrate. The HM and DDC within the second region are etched and at least a portion of the DL is exposed within the second region. The PR is removed and the substrate is annealed to diffuse the dipole dopant into a portion of the DL disposed in the first region.

公开(公告)号：US20220328308A1

公开(公告)日：2022-10-13

申请号：US17843541

申请日：2022-06-17

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG ,  Steven C. H. HUNG

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67

Abstract: A method of forming a high-κ dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-κ dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-κ dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-κ dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US20220238680A1

公开(公告)日：2022-07-28

申请号：US17528863

申请日：2021-11-17

Applicant: Applied Materials, Inc.

Inventor： Steven C. H. HUNG ,  Benjamin COLOMBEAU ,  Myungsun KIM ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L29/06

Abstract: A method of forming a gate stack structure includes forming a dipole metal layer on a high-κ gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-κ gate dielectric layer.

公开(公告)号：US20220165852A1

公开(公告)日：2022-05-26

申请号：US17529948

申请日：2021-11-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline S. WRENCH ,  Luping LI ,  Yong YANG ,  Seshadri GANGULI

IPC: H01L29/40 ,  H01L29/49 ,  C23C28/02 ,  C23C28/00 ,  C23C16/455

Abstract: A method of filling a feature in a semiconductor structure includes forming a barrier layer in the feature by one of atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD); wherein the barrier layer is one of cobalt (Co), molybdenum (Mo), molybdenum nitride (MoN) plus Mo, titanium (Ti), titanium aluminum carbide (TiAlC), or titanium nitride (TiN); and forming a metal layer in the feature and over the barrier layer by one of ALD or CVD; wherein the metal layer is one of aluminum (Al), Co, Mo, ruthenium (Ru), or tungsten (W).