公开(公告)号：US20200083056A1

公开(公告)日：2020-03-12

申请号：US16682154

申请日：2019-11-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Yingli RAO ,  Srinivas GANDIKOTA

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L21/321 ,  C23C16/455 ,  C23C28/00 ,  C23C16/40 ,  C23C16/50 ,  H01L21/3205 ,  H01L27/11578

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US20190080915A1

公开(公告)日：2019-03-14

申请号：US16120800

申请日：2018-09-04

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Yingli RAO ,  Srinivas GANDIKOTA

IPC: H01L21/285 ,  H01L21/321 ,  C23C16/06 ,  C23C16/34

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.