Resist for electron beam lithography and a process for producing photomasks using electron beam lithography
    39.
    发明授权
    Resist for electron beam lithography and a process for producing photomasks using electron beam lithography 有权
    电子束光刻的抗蚀剂和使用电子束光刻制造光掩模的方法

    公开(公告)号:US07220531B2

    公开(公告)日:2007-05-22

    申请号:US10376904

    申请日:2003-02-28

    IPC分类号: G03F7/004 G03F7/20 G03F7/40

    摘要: The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

    摘要翻译: 本发明涉及一种用于电子束光刻的抗蚀剂以及用于制造光刻光掩模的方法。 本发明的抗蚀剂包括衍生自马来酸酐的重复单元,并且可以充当用于随后结合含硅基团的锚定基团。 因此可以随后增加抗蚀剂的蚀刻稳定性,使得在将抗蚀剂结构转移到布置在抗蚀剂下方的铬层中时,没有尺寸损失。

    Photosensitive coating for enhancing a contrast of a photolithographic exposure
    40.
    发明申请
    Photosensitive coating for enhancing a contrast of a photolithographic exposure 审中-公开
    用于增强光刻曝光对比度的感光涂层

    公开(公告)号:US20070092829A1

    公开(公告)日:2007-04-26

    申请号:US11256677

    申请日:2005-10-21

    IPC分类号: G03C1/00

    摘要: A photosensitive coating material for enhancing a contrast of a photolithographic exposure of a resist film formed on a substrate, including a base polymer, a solvent for facilitating deposition of the photosensitive coating material upon a surface adjacent to said resist film to form a film thereupon, an alkaline additive suited to diffuse into the adjacent resist for reducing or neutralizing an acid concentration formed locally therein, a photoactive component arranged to reduce or neutralize a concentration of the alkaline additives in portions of the photosensitive coating, which are exposed with optical light, UV- or X-ray radiation, electrons, charged particles, ion projection lithography.

    摘要翻译: 一种用于增强形成在包括基础聚合物的基底上的抗蚀剂膜的光刻曝光的对比度的感光涂层材料,用于便于将感光涂层材料沉积在与所述抗蚀剂膜相邻的表面上形成膜的溶剂, 适合于扩散到相邻抗蚀剂中以减少或中和其中局部形成的酸浓度的碱性添加剂,被配置为减少或中和在光敏部分曝光的部分感光性涂层中的碱性添加剂的浓度的光活性成分,UV - 或X射线辐射,电子,带电粒子,离子投影光刻。