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    Resist for electron beam lithography and a process for producing photomasks using electron beam lithography
    2.
    发明授权
    Resist for electron beam lithography and a process for producing photomasks using electron beam lithography 有权
    电子束光刻的抗蚀剂和使用电子束光刻制造光掩模的方法

    公开(公告)号：US07220531B2

    公开(公告)日：2007-05-22

    申请号：US10376904

    申请日：2003-02-28

    申请人： Klaus Elian ,  Michael Sebald

    发明人： Klaus Elian ,  Michael Sebald

    IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/40

    CPC分类号： G03F7/405 ,  G03F1/78 ,  Y10S430/143

    摘要： The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

    摘要翻译： 本发明涉及一种用于电子束光刻的抗蚀剂以及用于制造光刻光掩模的方法。 本发明的抗蚀剂包括衍生自马来酸酐的重复单元，并且可以充当用于随后结合含硅基团的锚定基团。 因此可以随后增加抗蚀剂的蚀刻稳定性，使得在将抗蚀剂结构转移到布置在抗蚀剂下方的铬层中时，没有尺寸损失。

    Method and apparatus for a post exposure bake of a resist
    4.
    发明申请
    Method and apparatus for a post exposure bake of a resist 审中-公开
    抗蚀剂后曝光烘烤的方法和装置

    公开(公告)号：US20060269879A1

    公开(公告)日：2006-11-30

    申请号：US11135634

    申请日：2005-05-24

    申请人： Klaus Elian ,  Michael Sebald

    发明人： Klaus Elian ,  Michael Sebald

    IPC分类号： G03F7/20

    CPC分类号： G03F7/203 ,  G03F7/38

    摘要： Method and Apparatus for A Post Exposure Bake Of A Resist In a Method for patterning a chemically amplified resist layer, the resist layer is provided on a substrate, the resist layer comprising resist molecules in a first state with a first solubility. Predetermined regions of the resist layer are exposed to a first radiation to generate a catalytic species in the exposed predetermined regions of the resist layer. The resist layer is exposed to a second radiation and resist molecules in the predetermined regions of the resist layer are converted from the first state into a second state with a second solubility, the conversion of a resist molecule being catalyzed by the catalytic species, and the activation energy of the catalyzed conversion of the resist molecule being lowered by the absorption of the second radiation in the resist molecule. The resist layer is developed with a predetermined developer.

    摘要翻译： 用于曝光抗蚀剂的方法和装置在用于图案化化学放大抗蚀剂层的方法中，抗蚀剂层设置在衬底上，抗蚀剂层包含具有第一溶解度的第一状态的抗蚀剂分子。 抗蚀剂层的预定区域暴露于第一辐射以在抗蚀剂层的暴露的预定区域中产生催化物质。 抗蚀剂层暴露于第二辐射，并且抗蚀剂层的预定区域中的抗蚀剂分子从第一状态转变为具有第二溶解度的第二状态，抗蚀剂分子由催化物质催化的转化，以及 通过抗蚀剂分子中的第二辐射的吸收，抗蚀剂分子的催化转化的活化能降低。 抗蚀剂层用预定的显影剂显影。

    Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resists
    5.
    发明授权
    Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resists 有权
    使用化学放大抗蚀剂降低光掩模生产中横向铬结构损失的平版印刷工艺

    公开(公告)号：US07157189B2

    公开(公告)日：2007-01-02

    申请号：US10375531

    申请日：2003-02-27

    申请人： Klaus Elian ,  Michael Sebald

    发明人： Klaus Elian ,  Michael Sebald

    IPC分类号： G03F9/00 ,  G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03C5/00

    CPC分类号： G03F7/405 ,  G03F1/78 ,  G03F7/40

    摘要： The invention relates to a process for the production of photomasks. A film of a photoresist, as used for structuring semiconductor substrates, for example a CARL resist, is applied to a chromium-coated quartz glass substrate. The photoresist layer is written on by means of a focused electron beam, heated and then developed. The now structured resist is treated with an amplification agent and thus increases in its etch resistance to an oxygen plasma. During etching of the bare chromium sections, the silicon introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. Thus, the structure written in by means of the electron beam can be transferred without loss into the chromium layer.

    摘要翻译： 本发明涉及一种生产光掩模的方法。 将用于构造半导体衬底（例如CARL抗蚀剂）的光致抗蚀剂的膜施加到涂有铬的石英玻璃衬底上。 光致抗蚀剂层通过聚焦电子束被写入，加热然后显影。 现在结构化的抗蚀剂用扩增剂处理，从而增加其对氧等离子体的耐蚀刻性。 在蚀刻裸铬部分期间，引入到光致抗蚀剂中的硅转化成二氧化硅，其在铬层上形成保护层。 因此，通过电子束写入的结构可以不损失地转移到铬层中。

    Method for producing resist structures
    6.
    发明授权
    Method for producing resist structures 失效
    抗蚀剂结构体的制造方法

    公开(公告)号：US06703190B2

    公开(公告)日：2004-03-09

    申请号：US10164550

    申请日：2002-06-07

    申请人： Klaus Elian ,  Stefan Hien ,  Ernst-Christian Richter ,  Michael Sebald

    发明人： Klaus Elian ,  Stefan Hien ,  Ernst-Christian Richter ,  Michael Sebald

    IPC分类号： G03C500

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  G03F7/0758 ,  G03F7/405 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/127

    摘要： A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

    摘要翻译： 描述了制造负型抗蚀剂结构的方法。 在该方法中，将化学强化的抗蚀剂施加到基材上，干燥，用光，X射线，电子或离子束照射，使用水性 - 碱性显影剂溶液加热显影，并从液相中硅化。 抗蚀剂含有以下成分：聚合物，其极性通过酸性作用改性并且含有羧酸酐基团，优选为潜在形式; 由热处理释放酸的化合物; 光反应性化合物，在用光，x射线，电子或离子束照射期间产生碱; 溶剂; 和任选的一种或多种添加剂。

    Pressure Sensor and Method
    10.
    发明申请
    Pressure Sensor and Method 有权
    压力传感器和方法

    公开(公告)号：US20110163395A1

    公开(公告)日：2011-07-07

    申请号：US12651623

    申请日：2010-01-04

    申请人： Thoralf Kautzsch ,  Marco Müller ,  Dirk Meinhold ,  Ben Rosam ,  Klaus Elian ,  Stefan Kolb

    发明人： Thoralf Kautzsch ,  Marco Müller ,  Dirk Meinhold ,  Ben Rosam ,  Klaus Elian ,  Stefan Kolb

    IPC分类号： H01L29/84 ,  H01L21/78

    CPC分类号： B81C1/00071 ,  B81B2201/0264 ,  G01L9/0042

    摘要： A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area.

    摘要翻译： 一种用于提供压力传感器基板的方法包括：在垂直于基板的主表面的第一方向上形成在基板内延伸的第一空腔，并且在垂直于第一方向的第二方向上延伸到基板的内部， 基板的第一通气区域; 形成第二空腔，该第二空腔沿第一方向在基板内延伸，该第二空腔在第二方向上平行于第一空腔延伸，并且不延伸到第一排气区域; 并打开第一个通风区域的第一个空腔。