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    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR
    2.
    发明申请
    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR 有权
    抗蚀剂组合物，形成抗蚀剂图案，新型化合物和酸产生剂的方法

    公开(公告)号：US20120264061A1

    公开(公告)日：2012-10-18

    申请号：US13478291

    申请日：2012-05-23

    Applicant: Hideo HADA ,  Yoshiyuki Utsumi ,  Takehiro Seshimo ,  Akiya Kawaue

    Inventor： Hideo HADA ,  Yoshiyuki Utsumi ,  Takehiro Seshimo ,  Akiya Kawaue

    IPC: C07C69/753 ,  G03F7/20 ,  G03F7/027

    CPC classification number: G03F7/027 ,  C07C309/12 ,  C07C311/46 ,  C07C311/48 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/74 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/30 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

    Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) including a compound represented by (b1-1), a compound represented by (b1-1′) and/or a compound represented by (b1-1″) (R1″-R3″ represents an aryl group or an alkyl group, provided that at least one of R1″-R3″ represents a substituted aryl group being substituted with a group represented by (b1-1-0), and two of R1″-R3″ may be mutually bonded to form a ring with the sulfur atom; X represents a C3-C30 hydrocarbon group; Q1 represents a carbonyl group-containing divalent linking group; X10 represents a C1-C30 hydrocarbon group; Q3 represents a single bond or a divalent linking group; Y10 represents —C(═O)— or —SO2—; Y11 represents a C1-C10 alkyl group or a fluorinated alkyl group: Q2 represents a single bond or an alkylene group; and W represents a C2-C10 alkylene group).

    Abstract translation: 一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中具有改变的溶解性的碱成分（A）和包含（b1-1）表示的化合物的酸产生剂成分（B），由（b1- 1'）和/或（b1-1“）表示的化合物（R1”-R3“表示芳基或烷基，条件是R1”-R3“中的至少一个表示被 由（b1-1-0）表示的基团和R1“-R3”中的两个可以相互键合形成与硫原子的环; X表示C3-C30烃基; Q1表示含羰基的二价 连接基团; X10表示C1-C30烃基; Q3表示单键或二价连接基团; Y10表示-C（= O） - 或-SO2-; Y11表示C1-C10烷基或氟化烷基 ：Q2表示单键或亚烷基; W表示C2-C10亚烷基）。

    Resist composition, method of forming resist pattern, novel compound, and acid generator
    3.
    发明申请
    Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
    抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂

    公开(公告)号：US20100119974A1

    公开(公告)日：2010-05-13

    申请号：US12591152

    申请日：2009-11-10

    Applicant: Hideo Hada ,  Yoshiyuki Utsumi ,  Takehiro Seshimo ,  Akiya Kawaue

    Inventor： Hideo Hada ,  Yoshiyuki Utsumi ,  Takehiro Seshimo ,  Akiya Kawaue

    IPC: G03F7/20 ,  G03F7/004 ,  C07C309/19 ,  C07C313/06

    CPC classification number: G03F7/027 ,  C07C309/12 ,  C07C311/46 ,  C07C311/48 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/74 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/30 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

    Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) including a compound represented by (b1-1), a compound represented by (b1-1′) and/or a compound represented by (b1-1″) (R1″-R3″ represents an aryl group or an alkyl group, provided that at least one of R1″-R3″ represents a substituted aryl group being substituted with a group represented by (b1-1-0), and two of R1″-R3″ may be mutually bonded to form a ring with the sulfur atom; X represents a C3-C30 hydrocarbon group; Q1 represents a carbonyl group-containing divalent linking group; X10 represents a C1-C30 hydrocarbon group; Q3 represents a single bond or a divalent linking group; Y10 represents —C(═O)— or —SO2—; represents a C1-C10 alkyl group or a fluorinated alkyl group: Q2 represents a single bond or an alkylene group; and W represents a C2-C10 alkylene group).

    Abstract translation: 一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中具有改变的溶解性的碱成分（A）和包含（b1-1）表示的化合物的酸产生剂成分（B），由（b1- 1'）和/或（b1-1“）表示的化合物（R1”-R3“表示芳基或烷基，条件是R1”-R3“中的至少一个表示被 由（b1-1-0）表示的基团和R1“-R3”中的两个可以相互键合形成与硫原子的环; X表示C3-C30烃基; Q1表示含羰基的二价 连接基团; X10表示C1-C30烃基; Q3表示单键或二价连接基团; Y10表示-C（= O） - 或-SO2-;表示C1-C10烷基或氟化烷基： Q2表示单键或亚烷基; W表示C2-C10亚烷基）。

    PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PREPARING THE SAME, AND DRY FILM RESIST COMPRISING THE SAME
    4.
    发明申请
    PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PREPARING THE SAME, AND DRY FILM RESIST COMPRISING THE SAME 失效
    光敏性树脂组合物，其制备方法和包含其的干膜保护层

    公开(公告)号：US20090136872A1

    公开(公告)日：2009-05-28

    申请号：US12328037

    申请日：2008-12-04

    Applicant: In-Ho YOON ,  Bong-Gi KIM ,  Chang-Seok RHO ,  Sang-Ki KANG ,  Kyung-Rock BYUN ,  Chan-Seok PARK

    Inventor： In-Ho YOON ,  Bong-Gi KIM ,  Chang-Seok RHO ,  Sang-Ki KANG ,  Kyung-Rock BYUN ,  Chan-Seok PARK

    IPC: G03F7/004

    CPC classification number: G03F7/0007 ,  G03F7/029 ,  G03F7/033 ,  Y10S430/116 ,  Y10S430/117 ,  Y10S430/121 ,  Y10S430/124 ,  Y10S430/127

    Abstract: The present invention relates to a photosensitive resin composition, a preparation method thereof, and a dry film resist comprising the same. More particularly, the photosensitive resin composition of the present invention is directed to a photosensitive resin composition including a) an alkali-soluble acrylate resin, b) a cross-linking monomer having at least two ethylenic double bonds, and c) a phosphinoxide based photopolymerization initiator and an acridon based photopolymerization initiator.According to the photosensitive resin composition and the dry film resist, it is easy to finely pattern using a laser direct image (LDI) with high density and the dry film has excellent sensitivity, resolution, and adhesiveness to the substrate.

    Abstract translation: 本发明涉及感光性树脂组合物及其制备方法以及含有该感光性树脂组合物的干膜抗蚀剂。 更具体地说，本发明的感光性树脂组合物涉及感光性树脂组合物，其包含a）碱溶性丙烯酸酯树脂，b）具有至少2个烯键式双键的交联单体，和c）基于氧化膦的光聚合 引发剂和吖啶基光聚合引发剂。 根据感光性树脂组合物和干膜抗蚀剂，可以容易地使用高密度的激光直接图像（LDI）进行精细图案化，并且干膜对基材具有优异的灵敏度，分辨率和粘附性。

    Photoresist resin composition
    6.
    发明授权
    Photoresist resin composition 失效
    光致抗蚀剂树脂组合物

    公开(公告)号：US07378223B2

    公开(公告)日：2008-05-27

    申请号：US11124224

    申请日：2005-05-06

    Applicant: Bong-gi Kim ,  Sung-mun Ryu ,  Seong-mo Park ,  Chan-seok Park

    Inventor： Bong-gi Kim ,  Sung-mun Ryu ,  Seong-mo Park ,  Chan-seok Park

    IPC: G03C1/73 ,  G03C1/76 ,  G03F7/028 ,  G03F7/09

    CPC classification number: G03F7/027 ,  Y10S430/117 ,  Y10S430/121 ,  Y10S430/123 ,  Y10S430/124 ,  Y10S430/125

    Abstract: The invention provides photoresist resin compositions and in particular, a photoresist resin compositions comprising a) an acrylate monomer having two urethane bonds, b) a crosslinkable urethane monomer having at least two ethylene double bonds, c) an alkali-soluble compound, d) a photopolymerization initiator and e) a solvent, and a photoresist dry film resists using the photoresist resins. The photoresist resin compositions and the photoresist dry film resists using the same in accordance with the invention have excellent adhesion to a substrate and sandblast resistance and at the same time, they have high sensitivity as well as high resolution, thereby enabling fine pattern formation on substrates.

    Abstract translation: 本发明提供了光致抗蚀剂树脂组合物，特别是光致抗蚀剂树脂组合物，其包含a）具有两个氨基甲酸酯键的丙烯酸酯单体，b）具有至少两个乙烯双键的交联性氨基甲酸酯单体，c）碱溶性化合物，d） 光聚合引发剂和e）溶剂，并且光致抗蚀剂干膜抗蚀使用光致抗蚀剂树脂。 根据本发明的光致抗蚀剂树脂组合物和使用其的光致抗蚀剂干膜具有优异的对基材的粘合性和耐喷砂性，同时它们具有高灵敏度和高分辨率，从而能够在基板上形成精细图案 。

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