Compound, positive resist composition and resist pattern forming method
    1.
    发明授权
    Compound, positive resist composition and resist pattern forming method 失效
    化合物,正光刻胶组合物和抗蚀剂图案形成方法

    公开(公告)号:US08389197B2

    公开(公告)日:2013-03-05

    申请号:US11994602

    申请日:2006-06-30

    摘要: The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

    摘要翻译: 本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括由下述通式(I)表示的化合物。 本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。 式(I)中,R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基,其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团,R21〜R24中的两个表示氢原子,其余表示酸解离,溶解抑制基团。 X为下述通式(Ia)或(Ib)表示的基团。

    Resist composition and method of forming resist pattern
    3.
    发明授权
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号:US08012669B2

    公开(公告)日:2011-09-06

    申请号:US12400203

    申请日:2009-03-09

    IPC分类号: G03F7/00 G03F7/004

    摘要: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1) shown below (wherein Q1 represents a divalent linkage group containing an oxygen atom; Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms which may have a substituent, with the proviso that the carbon atom adjacent to the sulfur atom within the —SO3− group has a fluorine atom bonded thereto; X represents a hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and A+ represents an organic cation), and the resist composition further including an organic compound (C) which generates an acid exhibiting a weaker acid strength than the acid generated from the acid generator (B1) upon exposure. [Chemical Formula 1] X-Q1-Y1—SO3+A+  (b1)

    摘要翻译: 一种抗蚀剂组合物,其包含在酸的作用下在碱性显影液中溶解度变化的碱成分(A)和曝光时产生酸的酸发生剂成分(B),所述酸发生剂成分(B)含有酸发生剂 (b1)由下述通式(b1)表示的化合物(其中Q1表示含有氧原子的二价连接基团; Y1表示可具有取代基的1〜4个碳原子的氟化亚烷基,条件是 与-SO 3 - 基中的硫原子相邻的碳原子具有氟原子键合; X表示可以具有取代基的碳原子数3〜30的烃基,A +表示有机阳离子),抗蚀剂 组合物还包含有机化合物(C),该有机化合物(C)在曝光时产生的酸强度比酸产生剂(B1)产生的酸弱。 [化学式1] X-Q1-Y1-SO3 + A +(b1)

    Materials for photoresist, photoresist composition and method of forming resist pattern
    4.
    发明授权
    Materials for photoresist, photoresist composition and method of forming resist pattern 失效
    用于光致抗蚀剂的材料,光致抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US07910284B2

    公开(公告)日:2011-03-22

    申请号:US11838951

    申请日:2007-08-15

    摘要: To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.

    摘要翻译: 为了克服由光致抗蚀剂图案的边缘粗糙度降低器件性能的问题,在一分子中具有0至6个官能团的多核酚化合物的混合物,其由于酸的作用而具有溶解度而化学转化 还原的碱性显影剂被用作光致抗蚀剂的材料。 在该混合物中,在非共轭状态下,将两个以上的三苯基甲烷结构键合至官能团以外的部分。 此外,该混合物包含平均官能团数为2.5或更低的多核化合物,并且包括在重量比方面每分子不具有15%或更少的任何官能团的多核化合物,并且多核苯酚化合物具有3或 每个分子更多的官能团减少40%以下。

    POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN
    6.
    发明申请
    POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN 有权
    聚合物化合物,包含这种聚合物化合物的光电组合物和形成耐蚀图案的方法

    公开(公告)号:US20100151383A1

    公开(公告)日:2010-06-17

    申请号:US12707462

    申请日:2010-02-17

    IPC分类号: G03F7/20 G03F7/004 C08F224/00

    摘要: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n  (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

    摘要翻译: 化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法 图案,能够以高分辨率形成精细图案。 高分子化合物作为碱溶性基团(i)包括其中选自醇羟基,羧基和酚羟基的基团用酸解离的溶解抑制基团(ii)保护的取代基, 通式(1)表示的化合物:[式1] -CH 2 OAOO-CH 2 - ] n(1)(其中,A表示1〜20个碳原子的有机基团, 1,n表示1〜4的整数)。

    MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM
    7.
    发明申请
    MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM 有权
    形成保护膜的材料,形成光电子图案的方法和用于洗涤/去除保护膜的方法

    公开(公告)号:US20100086879A1

    公开(公告)日:2010-04-08

    申请号:US12441514

    申请日:2007-09-13

    摘要: Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

    摘要翻译: 公开了一种用于形成层压在光致抗蚀剂膜上的保护膜的材料,其可以防止由具有高斥水性的对环境影响很小的光致抗蚀剂膜产生的废气对曝光装置的污染 性质,其微小地引起与光致抗蚀剂膜的混合,并且其可以形成高分辨率光致抗蚀剂图案; 形成光致抗蚀剂图案的方法; 以及洗涤/除去保护膜的溶液。 具体公开的是:形成保护膜的材料,其包含(a)非极性聚合物和(b)非极性溶剂; 通过使用该材料形成光致抗蚀剂图案的方法; 以及旨在用于该方法的保护膜的洗涤/去除溶液。

    POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD
    10.
    发明申请
    POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD 有权
    积极抵抗组合物,热流积极抵抗组合物和抗性图案形成方法

    公开(公告)号:US20090142696A1

    公开(公告)日:2009-06-04

    申请号:US12089681

    申请日:2006-10-17

    IPC分类号: G03F7/20 G03F7/004

    摘要: Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).

    摘要翻译: 公开了包含树脂组分(A)和酸产生剂组分(B)的正型抗蚀剂组合物,其中组分(A)含有包含由下式(a0)表示的结构单元(a0)的高分子化合物(A1) 和衍生自含有内酯的环状基团的丙烯酸酯的结构单元(a2)(其中,R表示氢原子,卤素原子,低级烷基或卤代低级烷基; Y1表示脂肪族环状基团 Z表示含有叔烷基的酸解离抑制基团,a表示1〜3的整数,b表示0〜2的整数,a + b = 1〜3,c,d,e各自独立地表示 独立地表示0〜3的整数)。