摘要:
The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要:
A resist composition including: a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid; and an acid-generator component (B) which generates acid upon exposure, wherein said acid-generator component (B) comprises an acid generator (B1) including a compound represented by general formula (b1-11) shown below: wherein R7″ to R9″ each independently represent an aryl group or an alkyl group, wherein two of R7″ to R9″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R7″ to R9″ represents a substituted aryl group having a group represented by general formula (I) shown below as a substituent; X− represents an anion; and Rf represents a fluorinated alkyl group.
摘要:
A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1) shown below (wherein Q1 represents a divalent linkage group containing an oxygen atom; Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms which may have a substituent, with the proviso that the carbon atom adjacent to the sulfur atom within the —SO3− group has a fluorine atom bonded thereto; X represents a hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and A+ represents an organic cation), and the resist composition further including an organic compound (C) which generates an acid exhibiting a weaker acid strength than the acid generated from the acid generator (B1) upon exposure. [Chemical Formula 1] X-Q1-Y1—SO3+A+ (b1)
摘要:
To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.
摘要:
A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要:
A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要:
Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
摘要:
A compound represented by general formula (I); and a compound represented by general formula (b1-1).[Chemical Formula 1] X-Q1-Y1—SO3−M+ (I) X-Q1-Y1—SO3−A+ (b1-1) wherein Q1 represents a divalent linkage group or a single bond; Y1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, and has an —SO2— bond in the structure thereof; M+ represents an alkali metal ion; and A+ represents an organic cation.
摘要:
The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要:
Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).
摘要翻译:公开了包含树脂组分(A)和酸产生剂组分(B)的正型抗蚀剂组合物,其中组分(A)含有包含由下式(a0)表示的结构单元(a0)的高分子化合物(A1) 和衍生自含有内酯的环状基团的丙烯酸酯的结构单元(a2)(其中,R表示氢原子,卤素原子,低级烷基或卤代低级烷基; Y1表示脂肪族环状基团 Z表示含有叔烷基的酸解离抑制基团,a表示1〜3的整数,b表示0〜2的整数,a + b = 1〜3,c,d,e各自独立地表示 独立地表示0〜3的整数)。