公开(公告)号：US20200249263A1

公开(公告)日：2020-08-06

申请号：US16748640

申请日：2020-01-21

Applicant: Applied Materials, Inc.

Inventor： Lu XU ,  Sarah Michelle BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Byung Seok KWON ,  Venkata Sharat Chandra PARIMI ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ

IPC: G01R29/12 ,  C23C16/52 ,  H01L21/66 ,  H01J37/32

Abstract: Embodiments described herein relate to methods and tools for monitoring electrostatic chucking performance. A performance test is performed that requires only one bowed substrate and one reference substrate. To run the test, the reference substrate is positioned on an electrostatic chuck in a process chamber and the bowed substrate is positioned on the reference substrate. A voltage is applied from a power source to the electrostatic chuck, generating an electrostatic chucking force to secure the bowed substrate to the reference substrate. Thereafter, the applied voltage is decreased incrementally until the electrostatic chucking force is too weak to maintain the bowed substrate in flat form, resulting in dechucking of the bowed wafer. By monitoring the impedance of the chamber during deposition using a sensor, the dechucking threshold voltage can be identified at the point where the impedance of the reference substrate and the impedance of the bowed substrate deviates.

公开(公告)号：US20200234982A1

公开(公告)日：2020-07-23

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20200224310A1

公开(公告)日：2020-07-16

申请号：US16716233

申请日：2019-12-16

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Kwangduk Douglas LEE ,  Sungwon HA ,  Jian LI

IPC: C23C16/458 ,  C23C16/46

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US20160307752A1

公开(公告)日：2016-10-20

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Sudha RATHI ,  Praket P. JHA ,  Saptarshi BASU ,  Kwangduk Douglas LEE ,  Martin J. SEAMONS ,  Bok Hoen KIM ,  Ganesh BALASUBRAMANIAN ,  Ziqing DUAN ,  Lei JING ,  Mandar B. PANDIT

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/04 ,  C23C16/458 ,  C23C16/46 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US20160133443A1

公开(公告)日：2016-05-12

申请号：US15000857

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  G03F7/427 ,  H01L21/02041 ,  H01L21/31116

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

Abstract translation: 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

公开(公告)号：US20160064264A1

公开(公告)日：2016-03-03

申请号：US14469573

申请日：2014-08-26

Applicant: Applied Materials, Inc.

Inventor： Prashant KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Zheng John YE ,  Swayambhu Prasad BEHERA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Jian J. CHEN

IPC: H01L21/683 ,  H01L21/02

CPC classification number: H01L21/6833

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

Abstract translation: 公开了用于增加击穿电压的方法和装置的技术，同时在处理室中超过约300摄氏度的温度下显着降低静电卡盘的电压泄漏。

公开(公告)号：US20150136325A1

公开(公告)日：2015-05-21

申请号：US14539914

申请日：2014-11-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Ganesh BALASUBRAMANIAN ,  Thuy BRICHER ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Bok Hoen KIM ,  Sungwon HA

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/509 ,  H01L21/67

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract translation: 用于修改沉积在等离子体处理室中的薄膜的均匀性图案的系统包括耦合到等离子体处理室的放电电极上的多个点的单个射频（RF）电源。 选择多个耦合点的定位，多个耦合点之间的功率分布或两者的组合以至少部分地补偿由腔室产生的薄膜的一致的不均匀图案。 多个耦合点之间的功率分布可以由在多个耦合点中的每个耦合点处施加的RF功率之间的适当的RF相位差产生。

公开(公告)号：US20230317455A1

公开(公告)日：2023-10-05

申请号：US18206514

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC classification number: H01L21/0338 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  C23C16/32 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20230151487A1

公开(公告)日：2023-05-18

申请号：US18099371

申请日：2023-01-20

Applicant: Applied Materials, Inc.

Inventor： Liangfa HU ,  Prashant Kumar KULSHRESHTHA ,  Anjana M. PATEL ,  Abdul Aziz KHAJA ,  Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Satya Teja Babu THOKACHICHU ,  Byung Seok KWON ,  Ratsamee LIMDULPAIBOON ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/505 ,  C23C16/45597 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45519

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

公开(公告)号：US20230041963A1

公开(公告)日：2023-02-09

申请号：US17963841

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Rajesh PRASAD ,  Sarah BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL ,  Scott FALK ,  Venkataramana R. CHAVVA

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.