公开(公告)号：US20140076236A1

公开(公告)日：2014-03-20

申请号：US14087671

申请日：2013-11-22

Applicant: Applied Materials, Inc.

Inventor： Ramprakash SANKARAKRISHNAN ,  Dale R. DU BOIS ,  Ganesh BALASUBRAMANIAN ,  Karthik JANAKIRAMAN ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC: C23C16/44 ,  F16K31/06

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Abstract translation: 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US20230343586A1

公开(公告)日：2023-10-26

申请号：US18342296

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  B08B7/00 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  B08B7/0035 ,  H01L21/0332 ,  C23C16/505 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/02115

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US20230048661A1

公开(公告)日：2023-02-16

申请号：US17975452

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN ,  Vivek Bharat SHAH ,  Jiheng ZHAO

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

公开(公告)号：US20220178017A1

公开(公告)日：2022-06-09

申请号：US17110785

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/26 ,  H01L21/02 ,  C23C16/505 ,  C23C16/455

Abstract: In one example, a method includes flowing a carbon-containing gas into a processing volume of a process chamber, the process chamber having internal surfaces comprising aluminum, and depositing a carbon film on the internal surfaces of the process chamber. The method also includes flowing fluorine radicals into the process chamber, and fluorinating the carbon film to create a CFx layer on the internal surfaces. The method also includes oxidizing the CFx layer on the internal surfaces creating an AlOCFx layer on the internal surfaces.

公开(公告)号：US20220102141A1

公开(公告)日：2022-03-31

申请号：US17035107

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik Comandoor ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44 ,  B08B7/00

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

公开(公告)号：US20200381222A1

公开(公告)日：2020-12-03

申请号：US16996004

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Prashanth KOTHNUR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN ,  Changgong WANG

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

公开(公告)号：US20200350146A1

公开(公告)日：2020-11-05

申请号：US16927618

申请日：2020-07-13

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Sidharth BHATIA ,  Ganesh BALASUBRAMANIAN

IPC: H01J37/32

Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

公开(公告)号：US20190304825A1

公开(公告)日：2019-10-03

申请号：US16443185

申请日：2019-06-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Ganesh BALASUBRAMANIAN ,  Lipyeow YAP ,  Jianhua ZHOU ,  Thomas NOWAK

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/324 ,  B05C13/00 ,  H01J37/32 ,  C23C16/458

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20180258535A1

公开(公告)日：2018-09-13

申请号：US15976468

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  C23C16/509 ,  C23C16/455 ,  C23C16/505 ,  C23C16/50 ,  C23C16/46 ,  C23C16/458 ,  G01N21/65 ,  G01N21/55 ,  H01L21/67 ,  H01L21/00

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.