公开(公告)号：US06815279B2

公开(公告)日：2004-11-09

申请号：US09907952

申请日：2001-07-19

申请人： Atsushi Yagishita ,  Kouji Matsuo

发明人： Atsushi Yagishita ,  Kouji Matsuo

IPC分类号： H01L21336

CPC分类号： H01L29/66545 ,  H01L21/26506 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/1054

摘要： A semiconductor device in which an NMOSFET and a PMOSFET are formed in a silicon substrate, wherein the gate electrodes of NMOSFET and PMOSFET are made of metallic materials, an Si—Ge layer is formed in at least part of the surface regions including the respective channel layers of the NMOSFET and PMOSFET, and the concentration of Ge in the channel layer of the NMOSFET is lower than the concentration of Ge in the channel layer of the PMOSFET.

公开(公告)号：US06510728B2

公开(公告)日：2003-01-28

申请号：US09769273

申请日：2001-01-26

申请人： Kouji Matsuo ,  Satoshi Ishikawa

发明人： Kouji Matsuo ,  Satoshi Ishikawa

IPC分类号： G01N2704

CPC分类号： G01N27/407

摘要： A gas sensor including a metallic shell (1) and an element (2), which is disposed in a hollow portion formed in the metallic shell (1). An inorganic powder (4) is filled into a gap between the element (2) and the metallic shell (1) to thereby hermetically seal the element (2) and the metallic shell (1) against each other. By using an inorganic powder (4) which does not have an exothermic peak within a temperature range up to 700° C. when subjected to differential thermal analysis, gastightness maintained at the gap portion between the element (2) and the metallic shell (1) is not impaired even in a working environment of 600° C. or higher. Talc powder composed of SiO2 and MgO can be used as the inorganic powder (4). However, a binder, such as water glass, is not added to the inorganic powder (4) in order to prevent the inorganic powder (4) from having an exothermic peak within a temperature range up to 700° C., which peak would otherwise appear when the talc powder is subjected to thermal analysis. In order to attain good formability, a material stone of talc is pulverized into particles having a particle size of 400 &mgr;m to 600 &mgr;m and the particles are used as the inorganic powder (4).

摘要翻译： 一种气体传感器，其包括金属壳（1）和元件（2），该气体传感器设置在形成在所述金属壳（1）中的中空部分中。 将无机粉末（4）填充到元件（2）和金属壳（1）之间的间隙中，从而将元件（2）和金属壳（1）彼此气密地密封。 通过使用在进行差示热分析时，在高达700℃的温度范围内不具有放热峰的无机粉末（4），在元件（2）和金属壳（1）之间的间隙部分保持气密性 ）即使在600℃以上的工作环境中也不会受损。 可以使用由SiO 2和MgO组成的滑石粉作为无机粉末（4）。 然而，为了防止无机粉末（4）在高达700℃的温度范围内具有放热峰，不向无机粉末（4）中添加粘合剂，例如水玻璃，否则将会达到峰值 当滑石粉进行热分析时出现。 为了获得良好的成形性，将滑石的石料粉碎成粒径为400μm至600μm的颗粒，并将该颗粒用作无机粉末（4）。

公开(公告)号：US08236641B2

公开(公告)日：2012-08-07

申请号：US13168183

申请日：2011-06-24

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823842

摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

摘要翻译： 半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。 源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。 栅电极形成在第二栅绝缘膜上。

公开(公告)号：US08148717B2

公开(公告)日：2012-04-03

申请号：US12929504

申请日：2011-01-28

申请人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

发明人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L21/823807 ,  H01L21/2686 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp (21541/T).

摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y＆nlE; 1E-5exp（21541 / T）的关系。

公开(公告)号：US20110127578A1

公开(公告)日：2011-06-02

申请号：US12929504

申请日：2011-01-28

申请人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

发明人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

IPC分类号： H01L29/12

CPC分类号： H01L21/823807 ,  H01L21/2686 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp (21541/T).

摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y＆nlE; 1E-5exp（21541 / T）的关系。

公开(公告)号：US07935235B2

公开(公告)日：2011-05-03

申请号：US11971705

申请日：2008-01-09

申请人： Kouji Matsuo ,  Satoshi Ishikawa

发明人： Kouji Matsuo ,  Satoshi Ishikawa

IPC分类号： G01N27/407

CPC分类号： G01N27/4077 ,  Y10T29/49929

摘要： In a method of manufacturing a sensor, firstly, a plate-type detection element is inserted through an element-insertion through-hole of a first powder-compacted ring. Secondly, a flange section including at least the first powder-compacted ring is integrally assembled to the plate-type detection element, applying axially compressive pressure to the first powder-compacted ring so as to compressively deform the first powder-compacted ring such that the cross-sectional area of the element-insertion through-hole is reduced. Thirdly, the flange section is engaged, directly or via an intermediate member, with the stepped portion of the metallic shell at the time of disposing of the plate-type detection element in the through-hole of the metallic shell. A sensor prepared by the method is also disclosed.

摘要翻译： 在制造传感器的方法中，首先，通过第一粉末压实环的元件插入通孔插入板型检测元件。 其次，至少包括第一粉末压实环的凸缘部分一体地组装到板式检测元件上，对第一粉末压实环施加轴向压缩压力，以使第一粉末压实环压缩变形，使得 元件插入通孔的横截面积减小。 第三，当将板状检测元件设置在金属外壳的通孔中时，凸缘部分直接或经由中间构件与金属外壳的台阶部分接合。 还公开了通过该方法制备的传感器。

公开(公告)号：US07745073B2

公开(公告)日：2010-06-29

申请号：US12289895

申请日：2008-11-06

申请人： Kyoichi Suguro ,  Takeshi Shibata ,  Kazuyoshi Sugihara ,  Kouji Matsuo

发明人： Kyoichi Suguro ,  Takeshi Shibata ,  Kazuyoshi Sugihara ,  Kouji Matsuo

IPC分类号： G03F9/00

CPC分类号： B82Y10/00 ,  C23C14/042 ,  C23C14/48 ,  G03F1/20 ,  H01J2237/0453 ,  H01J2237/31788 ,  H01L21/266 ,  Y10T428/24273

摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

摘要翻译： 制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底 使用相对设置在半导体衬底上的模板掩模。

公开(公告)号：US20080116068A1

公开(公告)日：2008-05-22

申请号：US11971705

申请日：2008-01-09

申请人： Kouji Matsuo ,  Satoshi Ishikawa

发明人： Kouji Matsuo ,  Satoshi Ishikawa

IPC分类号： G01N27/26

CPC分类号： G01N27/4077 ,  Y10T29/49929

摘要： In a method of manufacturing a sensor, firstly, a plate-type detection element is inserted through an element-insertion through-hole of a first powder-compacted ring. Secondly, a flange section including at least the first powder-compacted ring is integrally assembled to the plate-type detection element, applying axially compressive pressure to the first powder-compacted ring so as to compressively deform the first powder-compacted ring such that the cross-sectional area of the element-insertion through-hole is reduced. Thirdly, the flange section is engaged, directly or via an intermediate member, with the stepped portion of the metallic shell at the time of disposing of the plate-type detection element in the through-hole of the metallic shell. A sensor prepared by the method is also disclosed.

摘要翻译： 在制造传感器的方法中，首先，通过第一粉末压实环的元件插入通孔插入板型检测元件。 其次，至少包括第一粉末压实环的凸缘部分一体地组装到板式检测元件上，对第一粉末压实环施加轴向压缩压力，以使第一粉末压实环压缩变形，使得 元件插入通孔的横截面积减小。 第三，当将板状检测元件设置在金属外壳的通孔中时，凸缘部分直接或经由中间构件与金属外壳的台阶部分接合。 还公开了通过该方法制备的传感器。

公开(公告)号：US20070238255A1

公开(公告)日：2007-10-11

申请号：US11649752

申请日：2007-01-05

申请人： Kiyotaka Miyano ,  Ichiro Mizushima ,  Kouji Matsuo

发明人： Kiyotaka Miyano ,  Ichiro Mizushima ,  Kouji Matsuo

IPC分类号： H01L21/336

CPC分类号： H01L29/1054 ,  H01L21/30625 ,  H01L21/324 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66606 ,  H01L29/66621

摘要： A semiconductor device includes: a layer provided on or above a semiconductor substrate, having an opening, and containing Si and Ge; and a gate provided at a position corresponding to the opening. It is possible to provide a semiconductor device and a manufacturing method of the same which realize easy control of a recess amount and reduction in damage at the time of the recessing.

摘要翻译： 半导体器件包括：设置在半导体衬底上或上方的具有开口并且包含Si和Ge的层; 以及设置在与开口相对应的位置处的门。 可以提供一种半导体器件及其制造方法，其实现容易控制凹陷量并减少凹陷时的损伤。

公开(公告)号：US20060237315A1

公开(公告)日：2006-10-26

申请号：US11410936

申请日：2006-04-26

申请人： Kouji Matsuo ,  Keiichi Noda ,  Yuichi Yamada

发明人： Kouji Matsuo ,  Keiichi Noda ,  Yuichi Yamada

IPC分类号： G01N27/26

CPC分类号： F02D41/1454 ,  F01N11/007 ,  G01N27/4062 ,  G01N27/407

摘要： A gas sensor 100 includes: a cylindrical metal shell 110; a gas detection element 120; a cylindrical sleeve 170 at least partially located inside the metal shell 110, and an axial hole 170c penetrating through the sleeve and accommodating the gas detection element 120 therein; and a connector 180 joined to a rear end portion of the gas detection element 120 and spaced apart from the sleeve 170, the connector 180 including a plurality of connector terminal portions 182 to 186 electrically connected to corresponding electrode terminal portions 125 to 129.

摘要翻译： 气体传感器100包括：圆柱形金属壳110; 气体检测元件120; 至少部分地位于金属外壳110内部的圆柱形套筒170和穿过套筒并将气体检测元件120容纳在其中的轴向孔170c; 以及连接到气体检测元件120的后端部并且与套筒170间隔开的连接器180，连接器180包括电连接到对应的电极端子部125至129的多个连接器端子部分182至186。