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59 条记录 (耗时 0.025 秒)

    Printed Non-Volatile Memory
    32.
    发明申请
    Printed Non-Volatile Memory 有权
    印刷非易失性存储器

    公开(公告)号：US20080048240A1

    公开(公告)日：2008-02-28

    申请号：US11842884

    申请日：2007-08-21

    申请人： Arvind Kamath ,  Patrick Smith ,  James Montague Cleeves

    发明人： Arvind Kamath ,  Patrick Smith ,  James Montague Cleeves

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L21/28518 ,  H01L21/288 ,  H01L21/76801 ,  H01L21/76895 ,  H01L27/115 ,  H01L27/11558 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/7881

    摘要： A nonvolatile memory cell is disclosed, having first and second semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island providing a control gate and the second semiconductor island providing source and drain terminals; a gate dielectric layer on at least part of the first semiconductor island; a tunneling dielectric layer on at least part of the second semiconductor island; a floating gate on at least part of the gate dielectric layer and the tunneling dielectric layer; and a metal layer in electrical contact with the control gate and the source and drain terminals. In one advantageous embodiment, the nonvolatile memory cell may be manufactured using an “all-printed” process technology.

    摘要翻译： 公开了一种非易失性存储器单元，其具有在相同水平位置处并且间隔开预定距离的第一和第二半导体岛，所述第一半岛具有提供控制栅极和所述第二半岛岛提供源极和漏极端子; 在所述第一半导体岛的至少一部分上的栅介质层; 在所述第二半导体岛的至少一部分上的隧道介电层; 至少部分栅极电介质层和隧道电介质层上的浮栅; 以及与控制栅极以及源极和漏极端子电接触的金属层。 在一个有利的实施例中，可以使用“全印刷”工艺技术来制造非易失性存储单元。

    Wafer temperature control apparatus and method
    33.
    发明授权
    Wafer temperature control apparatus and method 失效
    晶圆温度控制装置及方法

    公开(公告)号：US06786998B1

    公开(公告)日：2004-09-07

    申请号：US08581347

    申请日：1995-12-29

    申请人： James Montague Cleeves

    发明人： James Montague Cleeves

    IPC分类号： C23F102

    CPC分类号： H01L21/68721 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126

    摘要： An assembly for holding a substrate is provided. The substrate has a first surface, a second surface, opposite the first surface and an outer peripheral portion. The assembly includes a holding body having a support surface for supporting the substrate. The holding body has an aperture for passing therethrough a gas having a thermal conductivity. Additionally, the assembly includes a heat transferring seal having a first surface for frictionally engaging the second surface of the substrate. The heat transferring seal has a second surface, opposite the first surface, for frictionally engaging the support surface of the holding body. The heat transferring seal also has an inner peripheral portion defining an opening for receiving the gas. The heat transferring seal has a thermal conductivity closely matched with the first thermal conductivity of the gas for providing substantially uniform heat transfer across the substrate.

    摘要翻译： 提供了一种用于保持基板的组件。 基板具有与第一表面相对的第一表面，第二表面和外周边部分。 组件包括具有用于支撑衬底的支撑表面的保持体。 保持体具有用于使具有导热性的气体通过的孔。 另外，组件包括具有用于摩擦地接合衬底的第二表面的第一表面的传热密封件。 传热密封件具有与第一表面相对的第二表面，用于与保持体的支撑表面摩擦接合。 传热密封件还具有限定用于接收气体的开口的内周部分。 传热密封件具有与气体的第一热导率密切匹配的导热性，以提供穿过基底的基本上均匀的热传递。

    Methods for manufacturing RFID tags and structures formed therefrom
    34.
    发明授权
    Methods for manufacturing RFID tags and structures formed therefrom 有权
    用于制造由其形成的RFID标签和结构的方法

    公开(公告)号：US09165238B2

    公开(公告)日：2015-10-20

    申请号：US12689703

    申请日：2010-01-19

    申请人： James Montague Cleeves ,  J. Devin MacKenzie ,  Arvind Kamath

    发明人： James Montague Cleeves ,  J. Devin MacKenzie ,  Arvind Kamath

    IPC分类号： H01L21/3205 ,  G06K19/077 ,  H01F17/00

    CPC分类号： H01L27/1255 ,  G06K19/073 ,  G06K19/07749 ,  H01F17/0006 ,  H01L23/13 ,  H01L23/142 ,  H01L23/66 ,  H01L27/127 ,  H01L27/1292 ,  H01L28/60 ,  H01L29/66143 ,  H01L29/66742 ,  H01L29/78696 ,  H01L29/872 ,  H01L2223/6611 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g., improved electrical characteristics) as compared to tags containing organic electronic devices.

    摘要翻译： 射频识别（RFID）标签及其制造方法。 RFID设备通常包括（1）金属天线和/或电感器; （2）其上的介电层，用于支撑和绝缘来自金属天线和/或电感器的集成电路; （3）介电层上的多个二极管和多个晶体管，二极管具有至少一个与晶体管共同的层; 和（4）与金属天线和/或电感器以及至少一些二极管电连通的多个电容器，所述多个电容器具有与所述多个二极管共同的至少一个层和/或与所述多个二极管的触点 二极管和晶体管。 该方法优选将液态含硅油墨沉积物集成到用于制造RFID电路的成本有效的集成制造工艺中。 此外，与含有机电子器件的标签相比，本RFID标签通常提供更高的性能（例如，改进的电气特性）。

    Series circuits and devices
    35.
    发明授权
    Series circuits and devices 有权
    串联电路和器件

    公开(公告)号：US08891264B1

    公开(公告)日：2014-11-18

    申请号：US11940161

    申请日：2007-11-14

    申请人： James Montague Cleeves ,  Patrick Smith

    发明人： James Montague Cleeves ,  Patrick Smith

    IPC分类号： H02H7/125 ,  H02H7/127

    CPC分类号： G06K19/0701 ,  H01L27/0266 ,  Y02P80/30

    摘要： Embodiments of the present invention relate to a rectifier circuit and methods of making the same for use in wireless devices (e.g., RFID tags). The present invention is drawn to a rectifier circuit comprising first and second diode-wired transistors in series, each having a gate oxide layers of the same target thickness. The first diode-wired transistor receives an alternating current and the second diode-wired transistor provides a rectifier output. The first and second diode-wired transistors are configured to divide between them a first voltage differential across the rectifier circuit. The gate oxides are exposed to a peak stress that is similar to a stress on the gate oxide of logic transistors made using the same process. The present invention is further drawn to a method of making a rectifier circuit, comprising printing a plurality of transistor bodies on a substrate, forming a gate oxide on each of the transistor bodies and a gate on each gate oxide, doping exposed portions of the transistor body to form first and second source/drain terminals therein, and forming interconnects electrically connecting the first source/drain terminals to the gate over the corresponding transistor body.

    摘要翻译： 本发明的实施例涉及一种整流电路及其制造方法，用于无线设备（例如RFID标签）。 本发明涉及一种包括串联的第一和第二二极管接线晶体管的整流电路，每个具有相同目标厚度的栅氧化层。 第一二极管接线晶体管接收交流电流，第二二极管接线晶体管提供整流器输出。 第一和第二二极管接线晶体管被配置为在它们之间划分整流器电路两端的第一电压差。 栅极氧化物暴露于与使用相同工艺制造的逻辑晶体管的栅极氧化物上的应力相似的峰值应力。 本发明进一步涉及一种制造整流器电路的方法，包括在衬底上印刷多个晶体管本体，在每个晶体管本体上形成栅极氧化物，并在每个栅极氧化物上形成栅极，掺杂晶体管的暴露部分 从而在其中形成第一和第二源极/漏极端子，以及形成将第一源极/漏极端子电连接到相应晶体管本体上的栅极的互连。

    PRINTED, SELF-ALIGNED, TOP GATE THIN FILM TRANSISTOR
    36.
    发明申请
    PRINTED, SELF-ALIGNED, TOP GATE THIN FILM TRANSISTOR 审中-公开
    打印，自对准，顶盖薄膜晶体管

    公开(公告)号：US20140299883A1

    公开(公告)日：2014-10-09

    申请号：US14311044

    申请日：2014-06-20

    申请人： Joerg ROCKENBERGER ,  James Montague Cleeves ,  Arvind Kamath

    发明人： Joerg ROCKENBERGER ,  James Montague Cleeves ,  Arvind Kamath

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7866 ,  B82Y10/00 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78681 ,  H01L29/7869

    摘要： A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.

    摘要翻译： 一种自对准顶栅薄膜晶体管（TFT）和通过形成半导体薄膜层形成这种薄膜晶体管的方法; 在其上印刷掺杂的玻璃图案，所述掺杂玻璃图案中的间隙限定所述TFT的沟道区域; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅介质膜和栅极导体; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。

    Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
    40.
    发明授权
    Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
    形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法

    公开(公告)号：US08372194B1

    公开(公告)日：2013-02-12

    申请号：US12020481

    申请日：2008-01-25

    申请人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

    发明人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

    IPC分类号： C09D183/16

    CPC分类号： H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

    摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

    摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的液态硅具有商业质量和数量的掺杂半导体膜。