Process for making a transmission mask
    31.
    发明授权
    Process for making a transmission mask 失效
    制作传输掩码的过程

    公开(公告)号:US4780382A

    公开(公告)日:1988-10-25

    申请号:US930812

    申请日:1986-11-13

    CPC classification number: G03F1/20 Y10S430/167

    Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.

    Abstract translation: 本发明是一种制造透射掩模的方法,该透射掩模可用于通过两层电镀沉积形成掩模结构,另一种覆盖掩模中的开口的栅格结构,以加法或减法的方式构造半导体衬底 结构体。 结构的厚度可自由选择自调节(在已知工程方法的限度内)。 目的是生产在掩模表面上方具有恒定有效厚度的透射掩模。

    Self-supporting mask, method for production as well as use of same
    32.
    发明授权
    Self-supporting mask, method for production as well as use of same 失效
    自支撑面膜,生产方法以及使用方法

    公开(公告)号:US4370556A

    公开(公告)日:1983-01-25

    申请号:US217064

    申请日:1980-12-16

    CPC classification number: G03F1/20 G03F7/70691 G03F7/708 G21K1/10

    Abstract: Mask for use in the treatment of substrates with an image-forming medium. The mask foil is thermally prestressed by the frame at the temperature of use. For this purpose, the material of the frame has a higher coefficient of thermal expansion than the material of the mask foil. A method of manufacturing such masks includes the step wherein the mask foil is mounted in the frame at a temperature which lies below the temperature of use.

    Abstract translation: 用于用成像介质处理底物的掩模。 掩模箔在使用温度下由框架预热。 为此,框架的材料具有比掩模箔的材料更高的热膨胀系数。 制造这种掩模的方法包括以下步骤:其中掩模箔以低于使用温度的温度安装在框架中。

    Charged-particle multi-beam exposure apparatus

    公开(公告)号:US07041992B2

    公开(公告)日:2006-05-09

    申请号:US10969493

    申请日:2004-10-20

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Particle multibeam lithography
    36.
    发明授权
    Particle multibeam lithography 有权
    粒子多光刻光刻

    公开(公告)号:US06989546B2

    公开(公告)日:2006-01-24

    申请号:US09375627

    申请日:1999-08-17

    Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

    Abstract translation: 在粒子多光刻光刻设备中,具有粒子源(203)的照明系统(242)产生带电粒子的照明光束(205)和位于照明系统(242)之后的多光束光学系统(208) 具有多个孔的阵列以形成多个子光束的至少一个孔板将所述子光束聚焦到衬底(220)的表面上,其中对于每个子光束(207),偏转单元(210) 被定位在多光束光学系统内,并且适于相对于期望的目标位置校正各个子光束的各个成像像差和/或在写入过程期间将子光束定位在衬底表面上。 优选地,对于每个子光束,第一孔径板的相应孔径限定了子束横截面的尺寸和形状,并且多光束光学系统产生基板表面上的孔的缩小图像, 至少20:1。

    Charged-particle multi-beam exposure apparatus
    37.
    发明申请
    Charged-particle multi-beam exposure apparatus 有权
    带电粒子多光束曝光装置

    公开(公告)号:US20050104013A1

    公开(公告)日:2005-05-19

    申请号:US10969493

    申请日:2004-10-20

    CPC classification number: H01J37/3174 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Abstract translation: 用于曝光目标(41)的带电粒子多光束曝光装置(1)使用沿平行光束路径朝向目标(41)传播的多个带电粒子束。 对于每个粒子束,提供照明系统(10),图案定义装置(20)和投影光学系统(30)。 照明系统(10)和/或投影光学系统(30)包括具有多于一个粒子束共有的透镜元件(L 1,L 2,L 3,L 4,L 5)的粒子 - 光学透镜。 图案定义装置(20)在相应的粒子束中限定多个子束,通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标(41)上的期望图案 子束穿透所述孔,并且还包括消隐装置,以切断所选子束从子束的相应路径的通过。

    Pattern lock system
    38.
    发明授权

    公开(公告)号:US06661015B2

    公开(公告)日:2003-12-09

    申请号:US09950140

    申请日:2001-09-10

    CPC classification number: H01J37/3045 H01J2237/31755

    Abstract: In a particle projection lithography system, an alignment system is used to determine alignment parameters to measure the position and shape of an optical image of a pattern of structures formed in a mask and imaged onto a target by means of a broad particle beam, by means of an apparatus with a plurality of alignment marks adapted to produce secondary radiation upon irradiation with radiation of said particle beam. In order to allow for a variation of the alignment parameters along the optical axis, the alignment marks are positioned outside the aperture of the alignment system for the part of the beam that generates said optical image, arranged at positions to coincide with particle reference beams projected through reference beam forming structures provided on the mask while said optical image is projected onto the target, and situated on at least two different levels over the target as seen along the directions of the respective reference beams.

    Field composable electrostatic lens system
    39.
    发明授权
    Field composable electrostatic lens system 失效
    现场可组合静电透镜系统

    公开(公告)号:US5869838A

    公开(公告)日:1999-02-09

    申请号:US712417

    申请日:1996-09-11

    Applicant: Gerhard Stengl

    Inventor: Gerhard Stengl

    CPC classification number: H01J37/12 H01J2237/3175

    Abstract: An electrostatic lens system consisting of several electrodes and a novel method of making same. The invention relates to a lithography apparatus that includes a field composable lens where at least one lens electrode has a novel structure, said structure comprising an outer support structure, an insulating intermediate part and a conductive inner part composed of a number of segment-like subelectrodes that can be individually powered, if necessary, slightly differently to produce desired individual electrostatic subfields to be superimposed to the lens field. With the field composable lens design, it has been successfully demonstrated that a number of shape and alignment errors of lens components can be corrected by supplying slightly different voltages to individual subelectrodes, thus optimizing the overall lens performance (in view of its optical properties). The lens components may be manufactured on less expensive and readily available conventional precision machinery rather than expensive and rarely available high precision equipment.

    Abstract translation: 由多个电极构成的静电透镜系统及其制造方法。 本发明涉及一种光刻设备,其包括场可组合透镜,其中至少一个透镜电极具有新颖的结构,所述结构包括外支撑结构,绝缘中间部分和由许多片状子电极组成的导电内部部分 如果需要,可以单独地供电,稍微不同以产生要叠加到透镜场的期望的各个静电子场。 通过现场可组合的透镜设计,已经成功地证明了可以通过向各个子电极提供稍微不同的电压来校正透镜部件的多个形状和对准误差,从而优化整体透镜性能(鉴于其光学性质)。 透镜部件可以以不那么昂贵且易于获得的常规精密机械制造,而不是昂贵且很少可用的高精度设备。

    Charged-particle exposure apparatus
    40.
    发明授权
    Charged-particle exposure apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US07737422B2

    公开(公告)日:2010-06-15

    申请号:US11816353

    申请日:2006-02-16

    Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    Abstract translation: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

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