公开(公告)号：US20240085803A1

公开(公告)日：2024-03-14

申请号：US18514254

申请日：2023-11-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tai-I Yang ,  Wei-Chen Chu ,  Hsiang-Wei Liu ,  Shau-Lin Shue ,  Li-Lin Su ,  Yung-Hsu Wu

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/09 ,  H01L21/768

CPC分类号： G03F7/70633 ,  G03F7/0035 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/094 ,  G03F7/70625 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76885 ,  H01L21/76897 ,  H01L21/76849

摘要： Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.

公开(公告)号：US11926581B2

公开(公告)日：2024-03-12

申请号：US17047446

申请日：2019-04-09

申请人： SAN-APRO LTD.

发明人： Takuto Nakao ,  Yusaku Takashima

IPC分类号： C07C381/12 ,  G03F7/038 ,  G03F7/09 ,  G03F7/20

CPC分类号： C07C381/12 ,  G03F7/0382 ,  G03F7/094 ,  G03F7/2002 ,  G03F7/2039

摘要： The sulfonium salt has high photosensitivity to i-rays and high compatibility with cationically polymerizable compounds such as epoxy compounds, and is excellent storage stability in formulations containing such compounds. The sulfonium salt is represented by general formula (1). In formula (1), R represents an alkyl group or an aryl group; substituents, R1 to R5, each independently represent an alkyl group, a hydroxy group, an alkoxy group, an aryl group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom; R6 to R9 each independently represent an alkyl group, an aryl group, or a hydrogen atom; m1 to m5 each represent the number of occurrences of each of R1 to R5, m1 and m4 represent an integer of 0 to 3, m2 and m5 represent an integer of 0 to 4, m3 represents an integer of 0 to 5, and X− represents a monovalent polyatomic anion.

公开(公告)号：US11914297B2

公开(公告)日：2024-02-27

申请号：US17251265

申请日：2019-06-17

申请人： TAMAPOLY CO., LTD.

发明人： Shinichi Oya ,  Toshiaki Hagiwara ,  Hitoshi Nakamura

IPC分类号： G03F7/11 ,  B32B27/08 ,  B32B27/32 ,  C08J5/18 ,  C08L23/06 ,  G03F7/09

CPC分类号： G03F7/11 ,  B32B27/08 ,  B32B27/32 ,  C08J5/18 ,  C08L23/06 ,  G03F7/094 ,  B32B2255/10 ,  B32B2307/20 ,  C08J2423/06 ,  C08L2203/16 ,  C08L2207/066

摘要： A cover film for dry film resist, includes a polyethylene film including a first mixture of high pressure low density polyethylene (LDPE) and linear low density polyethylene (LLDPE). The first mixture has an LDPE to LLDPE ratio by mass of from 90:10 to 60:40. The polyethylene film is free of a plasticizer, anti-blocking agent, slipping agent, and anti-static agent. The number of fish eyes having a minimum diameter of 0.2 mm or greater present in 100 m2 of the 19 μm thick cover film in plan view is at most two. The polyethylene film has a thickness of from 10 to 20 μm and a haze value of from 12 to 25%.

公开(公告)号：US20240063060A1

公开(公告)日：2024-02-22

申请号：US18501653

申请日：2023-11-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chieh-Wei Chen ,  Jian-Jou Lian ,  Tzu-Ang Chiang ,  Chun-Neng Lin ,  Ming-Hsi Yeh

IPC分类号： H01L21/8234 ,  G03F1/46 ,  G03F7/09 ,  H01L21/027 ,  H01L29/66

CPC分类号： H01L21/823431 ,  G03F1/46 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/82345 ,  H01L29/66795

摘要： A method includes depositing a first work function layer over a gate dielectric layer, forming a first hard mask layer over the first work function layer, forming a photoresist mask over the first hard mask layer, where forming the photoresist mask includes depositing a bottom anti-reflective coating (BARC) layer over the first hard mask layer, etching a portion of the BARC layer, etching a portion of the first hard mask layer using the BARC layer as a mask, etching a portion of the first work function layer to expose a portion of the gate dielectric layer through the first hard mask layer and the first work function layer, removing the first hard mask layer, and depositing a second work function layer over the first work function layer and over the portion of the gate dielectric layer.

公开(公告)号：US20240061330A1

公开(公告)日：2024-02-22

申请号：US18349504

申请日：2023-07-10

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Myung Mo SUNG ,  Jinho AHN ,  Yeong Eun BAK ,  Hyeon Seok JI ,  Jae Hyuk LEE

IPC分类号： G03F7/004 ,  G03F7/09

CPC分类号： G03F7/0042 ,  G03F7/094 ,  G03F7/0045

摘要： A multilayer molecular film photoresist is provided. The multilayer molecular film photoresist comprises a plurality of molecular lines extending upwards above a substrate arranged in the horizontal direction. Each of the molecular lines includes a plurality of inorganic single molecules and an organic single molecule sandwiched between at least some of the inorganic single molecules, and these single molecules are connected by bonds.

公开(公告)号：US11848239B2

公开(公告)日：2023-12-19

申请号：US16925918

申请日：2020-07-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chieh-Wei Chen ,  Jian-Jou Lian ,  Tzu-Ang Chiang ,  Chun-Neng Lin ,  Ming-Hsi Yeh

IPC分类号： H01L21/8234 ,  H01L21/027 ,  H01L21/336 ,  G03F1/46 ,  G03F7/09 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823431 ,  G03F1/46 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/82345 ,  H01L29/66795

摘要： A method includes depositing a first work function layer over a gate dielectric layer, forming a first hard mask layer over the first work function layer, forming a photoresist mask over the first hard mask layer, where forming the photoresist mask includes depositing a bottom anti-reflective coating (BARC) layer over the first hard mask layer, etching a portion of the BARC layer, etching a portion of the first hard mask layer using the BARC layer as a mask, etching a portion of the first work function layer to expose a portion of the gate dielectric layer through the first hard mask layer and the first work function layer, removing the first hard mask layer, and depositing a second work function layer over the first work function layer and over the portion of the gate dielectric layer.

公开(公告)号：US20230393474A1

公开(公告)日：2023-12-07

申请号：US18231447

申请日：2023-08-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： An-Ren ZI ,  Ching-Yu Chang

IPC分类号： G03F7/09 ,  G03F7/039 ,  C08L101/02 ,  G03F7/004 ,  G03F7/26

CPC分类号： G03F7/094 ,  G03F7/039 ,  C08L101/02 ,  G03F7/0042 ,  G03F7/26

摘要： A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

公开(公告)号：US20230369047A1

公开(公告)日：2023-11-16

申请号：US18361878

申请日：2023-07-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Tien Shen ,  Ya-Wen Yeh ,  Wei-Liang Lin ,  Ya Hui Chang ,  Yung-Sung Yen ,  Wei-Hao Wu ,  Li-Te Lin ,  Ru-Gun Liu ,  Kuei-Shun Chen

IPC分类号： H01L21/027 ,  G03F7/09 ,  H01L21/311 ,  H01L21/033 ,  G03F7/20 ,  H01L21/306 ,  G03F7/11

CPC分类号： H01L21/0273 ,  G03F7/09 ,  H01L21/0337 ,  H01L21/311 ,  G03F7/11 ,  G03F7/20 ,  H01L21/0274 ,  H01L21/306

摘要： The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes forming a hard mask layer over a substrate, the substrate having one or more regions to receive a treatment process, forming a resist layer over the hard mask layer, patterning the resist layer to form a plurality of openings in the resist layer, each of the openings free of concave corners, performing an opening expanding process to enlarge at least one of the openings in the resist layer, transferring the openings in the resist layer to the hard mask layer, and performing the treatment process to the one or more regions in the substrate through the openings in the hard mask layer.

公开(公告)号：US11817293B2

公开(公告)日：2023-11-14

申请号：US17146300

申请日：2021-01-11

申请人： Research Foundation for the State University of New York

发明人： Gregory Denbeaux

IPC分类号： H01L21/31 ,  H01J37/317 ,  H01L21/027 ,  H01L21/426 ,  G03F7/09

CPC分类号： H01J37/3171 ,  G03F7/09 ,  H01L21/0274 ,  H01L21/426

摘要： Photoresist layers of semiconductor components including electric fields. The photoresist layer may include a body including a first portion disposed directly over a conductive layer of the semiconductor component. The body may also include a second portion integrally formed with and positioned over the first portion. The second portion may include a surface formed opposite the first portion. Additionally, the second portion may include a plurality of charged-particles implanted therein, where the plurality of charged-particles generating an electric field may extend through the first portion and the second portion of the body.

公开(公告)号：US11815812B2

公开(公告)日：2023-11-14

申请号：US17538384

申请日：2021-11-30

申请人： Funai Electric Co., Ltd.

发明人： David C. Graham ,  Joel P. Provence ,  Sean T. Weaver ,  Richard D. Wells

IPC分类号： G03F7/031 ,  G03F7/09 ,  H01L21/027

CPC分类号： G03F7/031 ,  G03F7/094 ,  H01L21/0274

摘要： A planarization layer and method therefor. The planarization layer has a thickness ranging from about 2 to about 3 microns, and contains from about 8.0 to about 8.5 wt. % photoacid generator; from about 2 to about 3.6 wt. % photoinitiator; from about 0.35 to about 0.5 wt. % green dye; from about 35 to about 46 wt. % multifunctional epoxy compound; from about 35 to about 50 wt. % of one or more difunctional epoxy compounds; and from about 1 to about 2.6 wt. % silane adhesion promoter, wherein all weight percent is based on a total weight of the layer devoid of solvent.