公开(公告)号：US4954685A

公开(公告)日：1990-09-04

申请号：US223343

申请日：1988-07-25

申请人： Hiromi Kumagai ,  Kaoru Sato ,  Yoshio Imai

发明人： Hiromi Kumagai ,  Kaoru Sato ,  Yoshio Imai

IPC分类号： C30B25/10 ,  C30B31/12 ,  F27D1/00

CPC分类号： C30B25/10 ,  C30B31/12 ,  F27D1/0033

摘要： A heating furnace for semiconductor wafers having a heater arranged around a core tube, layers of a heat insulating material made of a porous heat insulating material or ceramic fibers arranged around the heater, and layers of a heat reflecting material arranged in the layers of the heat insulating material.

摘要翻译： 一种用于半导体晶片的加热炉，具有围绕芯管布置的加热器，由多孔绝热材料制成的隔热材料层或布置在加热器周围的陶瓷纤维层，以及布置在热层中的热反射材料层 绝缘材料。

公开(公告)号：US4943234A

公开(公告)日：1990-07-24

申请号：US314460

申请日：1989-02-23

申请人： Heinrich Sohlbrand

发明人： Heinrich Sohlbrand

IPC分类号： H01L21/22 ,  C30B31/10 ,  C30B31/12 ,  C30B31/14 ,  H01L21/31

CPC分类号： C30B31/14 ,  C30B31/10 ,  C30B31/12 ,  Y10S414/14

摘要： The invention proposes a process and equipment for the thermal treatment of semiconductor materials which contains an isothermal, all-round heated process tube in a so-called "closed-tube" process using a compact construction of the furnace, whereby a defined process gas atmosphere is present in the process chamber from the very start of the process and a reverse diffusion is prevented. A double-tube system is used here with an adjustable interspace rinsing, i.e. the use of the so-called "rapid cassette" in cold blowing. Applications for the invention are in particular the oxidation, diffusion, deposition and tempering of semiconductor discs.

摘要翻译： 本发明提出了一种用于热处理半导体材料的方法和设备，该方法和设备在使用炉的紧凑结构的所谓“封闭管”方法中包含等温全方位加热的加工管，由此定义的工艺气体气氛 从工艺的开始就存在于处理室中，并且防止反向扩散。 这里使用双管系统，其中可调节的间隙冲洗，即在所谓的“快速盒”中使用冷吹。 本发明的应用特别是半导体盘的氧化，扩散，沉积和回火。

公开(公告)号：US4883424A

公开(公告)日：1989-11-28

申请号：US233236

申请日：1988-08-17

申请人： Takamasa Sakai ,  Yuusuke Muraoka

发明人： Takamasa Sakai ,  Yuusuke Muraoka

IPC分类号： H01L21/205 ,  C30B31/12 ,  H01L21/22 ,  H01L21/31

CPC分类号： C30B31/12

摘要： An apparatus for heat treating substrates. The apparatus comprises a furnace core tube for containing the substrates, a heater provided for enclosing the furnace core tube, an inner cylinder provided for enclosing the heater, and an outer cylinder with a path for cooling water provided therein. The apparatus further comprises a heat reflecting mirror formed on an inner surface of the outer cylinder and a blower for ventilating the space between the furnace core tube and the inner cylinder. After heat treatment of the substrates is carried out, the blower is activated and the cooling water is circulated in the outer cylinder. Therefore, an undesirable rise in the temperature of the mirror can be prevented.

摘要翻译： 一种热处理基板的设备。 该装置包括用于容纳基板的炉芯管，用于封闭炉芯管的加热器，用于封闭加热器的内筒，以及设置在其中的用于冷却水的路径的外筒。 该装置还包括形成在外筒的内表面上的热反射镜和用于使炉芯管和内筒之间的空间通风的鼓风机。 在进行基板的热处理之后，鼓风机被启动，冷却水在外筒中循环。 因此，能够防止反射镜的温度上升。

公开(公告)号：US4832781A

公开(公告)日：1989-05-23

申请号：US141709

申请日：1988-01-07

申请人： Eric L. Mears

发明人： Eric L. Mears

IPC分类号： B29C39/02 ,  B29C39/26 ,  B29L31/00 ,  C23C14/50 ,  C30B25/10 ,  C30B31/12 ,  C30B31/22 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265

CPC分类号： H01L21/67103 ,  C23C14/50 ,  C30B25/10 ,  C30B31/12 ,  C30B31/22 ,  H01L21/67069

摘要： Thermal transfer between a semiconductor wafer and a platen during vacuum processing is provided through a soft, thermally-conductive polymer layer having a thin, hard surface film. The soft polymer layer, which is preferably silicone rubber containing thermally-conductive particles, conforms to surface irregularities on the wafer and has low thermal resistance. The surface film is preferably silicon dioxide in the form of a multiplicity of flat plates integrally formed on the silicone rubber. Adherence of the wafer and of foreign matter to the polymer layer is prevented by the surface film. In addition, the underlying polymer layer is protected by the surface film. A high purity polymer layer is fabricated by evacuating the mold cavity and the resin container prior to injection of resin. The mold for the polymer layer utilizes a hard, smooth mold release surface and a resilient gasket between the platen and the mold release surface. The gasket establishes the dimensions of the polymer layer and seals the mold cavity. The surface film is formed by oxygen plasma treatment of the silicone rubber layer.

公开(公告)号：US4593168A

公开(公告)日：1986-06-03

申请号：US581268

申请日：1984-02-17

申请人： Haruo Amada

发明人： Haruo Amada

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/18 ,  H01L21/22 ,  H05B6/80 ,  H05B6/78

CPC分类号： H01L21/18 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H05B6/806 ,  Y10T29/41

摘要： The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is projected on the wafer in this state so as to heat it. According to the present invention, only the wafer is heated and, hence, the wafer can be heat-treated uniformly and efficiently with great precision.

摘要翻译： 本发明涉及利用电磁波对半导体晶片进行热处理的方法。 晶片被气体喷射而浮起并保持在非接触状态，并且在这种状态下将电磁波（如微波）投影在晶片上以便加热。 根据本发明，只有晶片被加热，因此可以高精度地均匀且有效地热处理晶片。

公开(公告)号：US4449037A

公开(公告)日：1984-05-15

申请号：US378261

申请日：1982-05-14

申请人： Yoshiyuki Shibamata ,  Hideo Onodera ,  Tadashi Kiriseko

发明人： Yoshiyuki Shibamata ,  Hideo Onodera ,  Tadashi Kiriseko

IPC分类号： H01L21/31 ,  C30B25/10 ,  C30B31/12 ,  C30B33/00 ,  H01L21/22 ,  F27B9/06 ,  C23C13/08

CPC分类号： C30B33/00 ,  C30B25/10 ,  C30B31/12

摘要： A system and method for evenly heating semiconductor wafers in a horizontal elongated reaction tube, wherein a furnace surrounding only a part of the length of the reaction tube is caused to move so as to pass along each wafer placed in the reaction tube. The system is especially useful for processing wafers at high temperatures for a short period of time.

摘要翻译： 一种用于在水平细长反应管中均匀加热半导体晶片的系统和方法，其中使仅围绕反应管的一部分长度的炉移动以便沿着放置在反应管中的每个晶片通过。 该系统对于在高温下短时间处理晶片特别有用。

公开(公告)号：US4345142A

公开(公告)日：1982-08-17

申请号：US950452

申请日：1978-10-11

申请人： Wolfgang Dietze

发明人： Wolfgang Dietze

IPC分类号： C01B33/02 ,  C01B33/035 ,  C23C16/01 ,  C23C16/22 ,  C23C18/12 ,  C30B31/10 ,  C30B31/12 ,  F27B5/14 ,  H01C1/14 ,  H05B3/10

CPC分类号： C23C16/22 ,  C23C16/01 ,  C30B31/10 ,  C30B31/12 ,  Y10T428/1393

摘要： Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current.

摘要翻译： 通过将热可分解的硅化合物的连续的硅或碳化硅层热解沉积到加热的石墨心轴上，直接可加热的管状半导体本体，不间断地从芯棒上除去所沉积的管状体，施加含掺杂剂的漆 或类似物放置在这种管状体的选定的外表面部分上，并使经涂覆的管状体经受足以掺杂身体的选择外部身体部分并使得这种身体经由所施加的电流直接加热的扩散条件。

公开(公告)号：US3974561A

公开(公告)日：1976-08-17

申请号：US474660

申请日：1974-05-30

申请人： Manfred Schnoeller

发明人： Manfred Schnoeller

IPC分类号： C30B25/00 ,  C23C16/01 ,  C23C16/22 ,  C23C16/44 ,  C30B29/60 ,  C30B31/02 ,  C30B31/06 ,  C30B31/10 ,  C30B31/12 ,  H01L21/22 ,  H05B3/00

CPC分类号： C30B31/12 ,  C23C16/01 ,  C23C16/22 ,  C30B29/06 ,  C30B29/36 ,  C30B31/02 ,  C30B31/10 ,  Y10S118/90 ,  Y10T29/49083

摘要： Hollow semiconductor bodies are formed from a gaseous phase by deposition on a heated mandrel and end zones of a so-produced body are doped so as to be conductive at room temperature.

摘要翻译： 中空半导体体通过沉积在加热的心轴上由气相形成，并且如此生产的体的端部区域被掺杂以在室温下导电。

公开(公告)号：US3805736A

公开(公告)日：1974-04-23

申请号：US37530873

申请日：1973-06-29

申请人： IBM

发明人： FOEHRING R ,  GARNACHE R ,  KENNEY D

IPC分类号： C30B31/10 ,  C30B31/12 ,  C30B31/16 ,  C23C13/10

CPC分类号： C30B31/16 ,  C30B31/106 ,  C30B31/12 ,  Y10S148/006 ,  Y10S148/12

摘要： Apparatus for continuously carrying out mass transfer reactions in a reaction chamber utilizing laminar flow to provide diffusion limited transport and to provide isolation between process steps. There is provided a gaseous phase material inlet filter tube to introduce gaseous phase material in laminar flow within a reaction zone and an exhaust pressure baffle to maintain laminar flow throughout the reaction zone. Substrates may be continuously passed through a reaction zone to provide an inline system.

摘要翻译： 用于在反应室中连续进行质量传递反应的装置，其利用层流以提供扩散限制的传输并在工艺步骤之间提供隔离。 提供了一种气相材料入口过滤管，以在反应区内的层流中引入气相物质和排气压力挡板，以保持整个反应区域中的层流。 底物可以连续地通过反应区以提供在线系统。

公开(公告)号：US06951996B2

公开(公告)日：2005-10-04

申请号：US10747592

申请日：2003-12-29

申请人： Paul J. Timans ,  Narasimha Acharya

发明人： Paul J. Timans ,  Narasimha Acharya

IPC分类号： H05B3/00 ,  C30B31/12 ,  F27D11/02 ,  H01L21/00 ,  H01L21/26 ,  H01L21/268 ,  H05B1/02 ,  H05B3/68 ,  F27B5/14

CPC分类号： H01L21/67248 ,  C30B31/12 ,  H01L21/67115 ,  Y10S438/928

摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

摘要翻译： 用于加热诸如半导体衬底的物体的脉冲处理方法和系统具有用于单个衬底的多脉冲处理的过程控制，或者具有不同物理性质的不同衬底的单脉冲或多脉冲处理。 在背景加热模式期间，热量以可控的方式施加到物体，由此在背景加热期间选择性地加热物体以至少大体上产生整个物体的温度升高。 物体的第一表面以脉冲加热模式被加热至少经受第一脉冲能量。 背景加热以与第一脉冲的定时关系来控制。 物体对第一能量脉冲的第一温度响应可以被感测并用于建立用于至少第二能量脉冲至少部分地产生目标条件的至少第二组脉冲参数。