公开(公告)号：US20070069158A1

公开(公告)日：2007-03-29

申请号：US11527522

申请日：2006-09-27

申请人： Tsuyoshi Ohnishi

发明人： Tsuyoshi Ohnishi

IPC分类号： G21K5/10

CPC分类号： H01J37/3056 ,  H01J37/304 ,  H01J2237/221 ,  H01J2237/30438 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

摘要： When a sample includes repeated cells, a scale pattern corresponding to the repeated cells is generated. Next, the scale pattern generated is superimposed on the image of the repeated cells of the sample, thereby identifying a destination cell. Moreover, disposition of the repeated cells of the sample is determined based on positions of at least three ends of the repeated cells. Then, the position of the destination cell is identified from this disposition of the repeated cells. Furthermore, a zoom image is generated by a combination of a zoom based on beam deflection function and a zoom based on software. Then, the image shift is performed by software without displacing a sample stage.

摘要翻译： 当样本包括重复的细胞时，生成与重复的细胞相对应的比例模式。 接下来，生成的缩放图案叠加在样本的重复单元的图像上，从而识别目的地单元。 此外，基于重复细胞的至少三个末端的位置确定样品的重复细胞的布置。 然后，从重复的小区的这种布置来识别目的地小区的位置。 此外，通过基于光束偏转功能的变焦和基于软件的变焦的组合来生成缩放图像。 然后，通过软件执行图像偏移而不移动样本台。

公开(公告)号：US07183562B2

公开(公告)日：2007-02-27

申请号：US11411349

申请日：2006-04-25

申请人： Hiroshi Nishimura ,  Naoto Kihara ,  Kinya Kato ,  Toru Takagi ,  Akihiro Goto ,  Junji Ikeda ,  Kazuya Okamoto

发明人： Hiroshi Nishimura ,  Naoto Kihara ,  Kinya Kato ,  Toru Takagi ,  Akihiro Goto ,  Junji Ikeda ,  Kazuya Okamoto

IPC分类号： G01N21/00 ,  G21K7/00

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/1471 ,  H01J37/226 ,  H01J37/265 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/1501 ,  H01J2237/2482 ,  H01J2237/2538 ,  H01J2237/262 ,  H01J2237/2806 ,  H01J2237/2817 ,  H01J2237/282 ,  H01J2237/2823 ,  H01J2237/2826 ,  H01J2237/30438

摘要： Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation-optical system, and enters a Wien filter (“E×B”). Upon passing through the E×B, the irradiation beam passes through an objective-optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective-optical system and the E×B in a different direction to a detector via an imaging-optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the E×B. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB-optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the E×B is in the same position as the image formed on the detector when electrical voltage and current are applied to the E×B. Also provided are “evaluation charts” for use in such alignments that do not require adjustment of the optical axis of the irradiation-optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.

摘要翻译： 公开了可以快速且准确地执行这种系统的带电粒子束（CPB）映射投影光学系统和调整方法。 在典型的系统中，照射光束从光源发出，通过照射光学系统，并进入维恩滤光片（“ExB”）。 当通过ExB时，照射光束通过物镜光学系统并且入射到物体表面上。 这种冲击产生观察光束，该观察光束经由成像光学系统通过物镜 - 光学系统和ExB以不同的方向返回到检测器。 调整光束源发射用于调整和对准例如物体表面的位置和/或ExB的维恩状态的调节光束。 调节光束可以相对于物镜光学系统偏轴。 对于这种调整和对准，可以使用为CPB光学系统和离轴光学系统优化的基准标记（例如位于物体表面的平面中）。 理想地，当电压和电流未施加到ExB时，在检测器上形成的图像与当将电压和电流施加到ExB时形成在检测器上的图像位于相同的位置。 还提供了用于这种对准的“评估图”，其不需要调整照射光学系统的光轴，并且发射的调节光束的动能分布从该对准是稳定的。

公开(公告)号：US20060027765A1

公开(公告)日：2006-02-09

申请号：US11245072

申请日：2005-10-07

申请人： Jacques Gierak ,  Peter Hawkes

发明人： Jacques Gierak ,  Peter Hawkes

IPC分类号： G21G4/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/0653 ,  H01J2237/21 ,  H01J2237/24535 ,  H01J2237/2485 ,  H01J2237/28 ,  H01J2237/30438 ,  H01J2237/30472 ,  H01J2237/31749

摘要： This device comprises adjustment means (40) for storing the desired characteristics for the beam (14), determining the values of the adjustment parameters of the apparatus (2) according to its characteristics, storing these values and giving these stored values to the adjustment parameters of the apparatus. The invention is applied in particular to the manufacturing of nanostructures.

摘要翻译： 该装置包括用于存储用于波束（14）的期望特性的调节装置（40），根据其特性确定装置（2）的调节参数的值，存储这些值并将这些存储的值提供给调整参数 的装置。 本发明特别适用于纳米结构的制造。

公开(公告)号：US20050077486A1

公开(公告)日：2005-04-14

申请号：US10683488

申请日：2003-10-09

申请人： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

发明人： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

IPC分类号： H01J37/304

CPC分类号： H01J37/3172 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/30488 ,  H01J2237/3171 ,  H01J2237/31737

摘要： A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method (FIG. 1).

摘要翻译： 描述了用于将单个颗粒位置精确地植入到衬底表面（1a）中的装置和方法。 用于将粒子束引导到衬底表面（1a）上的隔膜和以pn结形式设置在其上的检测器，用于确定在将颗粒撞击到衬底表面（1a）上时产生的二次电子流。 尖端（4），其形成在一侧安装的柔性臂（2）的自由端部上。 该装置是根据AFM方法（图1）操作的扫描装置的一部分。

公开(公告)号：US20040253543A1

公开(公告)日：2004-12-16

申请号：US10462389

申请日：2003-06-16

发明人： Randall Grafton Lee ,  Charles J. Libby

IPC分类号： G03F007/00 ,  G03C005/00

CPC分类号： G11B5/3967 ,  G11B5/1871 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3166 ,  H01J37/3056 ,  H01J2237/30438 ,  Y10S430/143 ,  Y10T428/11 ,  Y10T428/1186

摘要： This invention relates to a multi-layer lithographically fabricated device used to produce improved thin-film recording heads. It further relates to a focused particle beam system for milling a recording head pole-tip assembly without irradiating a sensitive structure, e.g. a read head, of the recording head. The invention precisely forms a pole-tip assembly by milling a second structural element without irradiating a first structural element. The invention avoids irradiating the first structural element by placing a first marker element, which can be imaged and/or damaged, in the same layer of a multi-layer lithographically fabricated device as the first structural element. The marker element has a fixed spatial relationship to the first structural element. Thus, by imaging the first marker element and the second structural element, and knowing the separation between the first structural element and the first marker element, a focused particle beam system can determine the relative location of the first and second structural elements. Consequently, the focused particle beam system can determine, without irradiating the sensitive first structural element, which portions of the second structural element require milling. In this manner, the focused particle beam system mills the second structural element to produce a desired pole-tip configuration. By producing a desired pole-tip configuration, these methods and apparatus produce an improved recording head capable of higher storage density than prior art techniques.

摘要翻译： 本发明涉及用于生产改进的薄膜记录头的多层光刻制造装置。 它还涉及一种用于在不照射敏感结构的情况下研磨记录头极尖组件的聚焦粒子束系统。 读头，记录头。 本发明通过研磨第二结构元件而不照射第一结构元件来精确地形成极尖组件。 本发明通过将可以成像和/或损坏的第一标记元件放置在与第一结构元件相同的多层光刻制造器件的相同层中来避免照射第一结构元件。 标记元件与第一结构元件具有固定的空间关系。 因此，通过对第一标记元件和第二结构元件进行成像，并且知道第一结构元件和第一标记元件之间的间隔，聚焦的粒子束系统可以确定第一和第二结构元件的相对位置。 因此，聚焦的粒子束系统可以在不照射敏感的第一结构元件的情况下确定第二结构元件的哪些部分需要研磨。 以这种方式，聚焦的粒子束系统研磨第二结构元件以产生期望的极尖构造。 通过产生期望的极尖构造，这些方法和装置产生能够比现有技术更高的存储密度的改进的记录头。

公开(公告)号：US20040222386A1

公开(公告)日：2004-11-11

申请号：US10835217

申请日：2004-04-29

申请人： Infineon Technologies AG

发明人： Jens Schneider ,  Tarek Lutz

IPC分类号： H01J037/304

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/30438 ,  H01J2237/30461 ,  H01J2237/31788 ,  H01J2237/31793

摘要： A method for detecting and compensating for positional displacements of a photolithographic mask unit, includes providing mask production data for the writing of the mask unit with an electron beam. A structure density of the mask unit is input and an electron beam deflection is brought about on the mask unit in dependence on the determined structure density of the mask unit. The mask production data are corrected through the use of the determined electron beam deflection, in order to obtain corrected mask production data, and the corrected mask production data are output. A lithography apparatus for mask units with correction of positional displacements of the mask unit, is also provided.

摘要翻译： 一种用于检测和补偿光刻掩模单元的位置位移的方法，包括提供用于用电子束写入掩模单元的掩模生产数据。 输入掩模单元的结构密度，并根据确定的掩模单元的结构密度在掩模单元上产生电子束偏转。 通过使用确定的电子束偏转来校正掩模生产数据，以获得校正的掩模生产数据，并且输出校正的掩模生产数据。 还提供了一种用于具有校正掩模单元的位置位移的掩模单元的光刻设备。

公开(公告)号：US20040033448A1

公开(公告)日：2004-02-19

申请号：US10377597

申请日：2003-03-04

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

IPC分类号： G03C005/00 ,  G03C005/04

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675 ,  H01J2237/30438

摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像， 至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于 所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

公开(公告)号：US06593583B2

公开(公告)日：2003-07-15

申请号：US09754649

申请日：2001-03-22

申请人： Kouji Iwasaki

发明人： Kouji Iwasaki

IPC分类号： H01J3708

CPC分类号： G01N23/20 ,  H01J2237/30438 ,  H01J2237/30455 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749

摘要： The present invention provides a focused ion beam method in which positional correction is performed with reference to reference points on a sample and for carrying out processing using an ion beam, in which reference point conformation does not take up a lot of time, and which is capable of accurate fine processing. The present invention performs high precision processing with correction performed at short intervals using reference mark confirmation when fine processing requiring accuracy is performed, while positional correction is carried out at long intervals when accuracy is not required, which means there is no wasted time because inefficient correction processing is omitted.

摘要翻译： 本发明提供了一种聚焦离子束方法，其中参考样品上的参考点进行位置校正，并且使用离子束进行处理，其中参考点构象不占用大量时间，并且哪个是 能够精确加工。 本发明在进行精细处理要求精度的同时，以短时间间隔进行校正，进行高精度处理，同时在不需要精度的情况下以长间隔进行位置校正，这意味着由于无效校正而没有浪费时间 省略处理。

公开(公告)号：US20030085363A1

公开(公告)日：2003-05-08

申请号：US10264004

申请日：2002-10-02

申请人： Nikon Corporation

发明人： Teruaki Okino

IPC分类号： H01J037/304

CPC分类号： H01J37/3045 ,  H01J2237/30438 ,  H01J2237/3175

摘要： In the context of charged-particle-beam (CPB) microlithography methods and systems, methods are disclosed for detecting the incidence orthogonality of a patterned beam on the lithographic substrate. In an embodiment, the position of reticle-fiducial-mark images, as formed on the substrate stage at a position Z1, are detected at two lateral positions of a corresponding reticle fiducial mark. A distance L1 between the images is determined. Then, the substrate stage is moved to a position Z2, at which the position of reticle-fiducial-mark images are detected at two lateral positions of the corresponding reticle fiducial mark. A distance L2 between the images is determined. The incidence-orthogonality error nullnull is calculated by substitution into nullnullnull(L1nullL2)/2nullH. The projection-optical system of the CPB microlithography apparatus is adjusted so that nullnullnull0.

摘要翻译： 在带电粒子束（CPB）微光刻方法和系统的背景下，公开了用于检测图案化光束在光刻基片上的入射正交性的方法。 在一个实施例中，在对应的标线基准标记的两个横向位置处检测到在位置Z1处形成在基板台上的标线片基准标记图像的位置。 确定图像之间的距离L1。 然后，将基板台移动到位置Z2，在该位置Z2，在相应的标线基准标记的两个横向位置处检测标线基准标记图像的位置。 确定图像之间的距离L2。 通过替换为DELTAtheta =（L1-L2）/ 2DELTAH计算发生率 - 正交性误差DELTAtheta。 调整CPB微光刻设备的投影光学系统，使DELTAta = 0。

公开(公告)号：US20020081815A1

公开(公告)日：2002-06-27

申请号：US10068172

申请日：2002-02-06

申请人： Nikon Corporation

发明人： Tomoharu Fujiwara ,  Noriyuki Hirayanagi

IPC分类号： H01L021/76

CPC分类号： H01L21/67282 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/3175 ,  H01L21/68 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Fiducial mark bodies are provided for use in CPB microlithography apparatus and methods. Such bodies are especially useful for attachment to the wafer stage of such apparatus, for measuring a distance between a reference position of the CPB-optical system of the apparatus and a reference position of an optical-based alignment sensor of the apparatus. The mark bodies provide improved accuracy of these and other positional measurements. A typical mark body is made of a substrate plate (e.g., quartz or quartz-ceramic) having a low coefficient of thermal expansion. Mark elements are defined on the substrate plate by a layer of heavy metal (e.g. are Ta, W, or Pt). The mark body includes a surficial or interior layer of an electrically conductive light metal that prevents electrostatic charging of the mark body and can be connected to ground.

摘要翻译： 提供了用于CPB微光刻设备和方法的基准标记体。 这样的主体对于附接到这种装置的晶片台是特别有用的，用于测量装置的CPB-光学系统的基准位置与装置的基于光学的对准传感器的基准位置之间的距离。 标记体提供了这些和其他位置测量的改进的精度。 典型的标记体由具有低热膨胀系数的衬底板（例如石英或石英陶瓷）制成。 标记元件通过重金属层（例如Ta，W或Pt）在衬底板上限定。 标记体包括导电轻金属的表层或内层，其防止标记体的静电充电并且可以连接到地面。