公开(公告)号：US20030010933A1

公开(公告)日：2003-01-16

申请号：US10165284

申请日：2002-06-04

申请人： Nikon Corporation

发明人： Teruaki Okino

IPC分类号： H01J037/304

CPC分类号： H01J37/3045 ,  H01J2237/3175

摘要： Methods and apparatus are disclosed for performing charged-particle-beam (CPB) microlithography, in which methods and apparatus certain position-measurement marks are detected by appropriate deflections of a charged particle beam. The deflections are performed using a primary deflector and a mark-scanning deflector. For example, the beam is deflected by the primary deflector to illuminate a position-measurement mark on the reticle and a corresponding position-measurement mark on the substrate. The position-measurement mark on the substrate is scanned by minute deflections of the beam as performed by the mark-scanning deflector. Meanwhile, charged particles backscattered from the position-measurement mark on the substrate (as the mark is being scanned) are captured and detected by a detector. The marks are detected at timing moments during normal operation of the primary deflector. Thus, during detection of the marks, the resulting positional determinations are less affected by extraneous variables such as changes in temperature and/or hysteresis of the primary deflector.

摘要翻译： 公开了用于执行带电粒子束（CPB）微光刻法的方法和装置，其中方法和装置通过带电粒子束的适当偏转来检测某些位置测量标记。 使用主偏转器和标记扫描偏转器执行偏转。 例如，光束被主偏转器偏转以照亮标线上的位置测量标记和基板上的相应位置测量标记。 通过标记扫描偏转器执行的光束的微小偏转来扫描基板上的位置测量标记。 同时，通过检测器捕获并检测从基板上的位置测量标记（正在被扫描的标记）反向散射的带电粒子。 在主偏转器的正常操作期间的时刻，检测出标记。 因此，在标记的检测期间，所得到的位置确定较少受诸如主要偏转器的温度变化和/或滞后等外部变量的影响。

公开(公告)号：US20020123168A1

公开(公告)日：2002-09-05

申请号：US09997646

申请日：2001-11-28

申请人： Nikon Corporation

发明人： Teruaki Okino ,  Shintaro Kawata

IPC分类号： H01L021/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： Apparatus and methods are disclosed pertaining to microlithography performed using a charged particle beam. In an exemplary apparatus, the projection-optical system includes a first projection lens situated downstream of a pattern-defining reticle and a second projection lens situated downstream of the first projection lens. Between the first and second projection lenses is a back focal plane of the first projection lens, at which focal plane a beam crossover is formed. The projection-optical system includes a cutoff-plate assembly, including at least one aperture-defining cutoff plate, located between the reticle and the back focal plane. The respective aperture in each cutoff plate is wider than an aperture in a scattering aperture conventionally located at the back focal plane. If the cutoff-plate assembly includes multiple cutoff plates, the aperture defined in the cutoff plate closer to the reticle is wider than the aperture defined in the more downstream cutoff plate. At least one of the cutoff plates defines an aperture that is laterally extended in a beam-deflection direction in the projection-optical system.

摘要翻译： 公开了关于使用带电粒子束进行的微光刻的装置和方法。 在示例性装置中，投影光学系统包括位于图案定义光罩的下游的第一投影透镜和位于第一投影透镜下游的第二投影透镜。 在第一和第二投影透镜之间是第一投影透镜的后焦平面，焦平面形成有光束交叉。 投影光学系统包括切割板组件，其包括位于光罩和后焦平面之间的至少一个孔径限定切割板。 每个切断板中的相应孔径比传统上位于后焦平面处的散射孔中的孔宽。 如果切割板组件包括多个切割板，则限定在更靠近光罩的切割板的孔比在更下游切割板中限定的孔宽。 截止板中的至少一个限定了在投影光学系统中沿光束偏转方向横向延伸的孔。

公开(公告)号：US20040126673A1

公开(公告)日：2004-07-01

申请号：US10651456

申请日：2003-08-29

申请人： Nikon Corporation

发明人： Jin Udagawa ,  Teruaki Okino ,  Noriyuki Hirayanagi

IPC分类号： G03F009/00 ,  G03B027/00 ,  G06K009/00

CPC分类号： G03F1/20 ,  G03F1/38

摘要： Microlithography reticles are disclosed that include a high-contrast reticle-identification code (bar code). The bar code is configured as a pattern (usually linearly arrayed) of high-scattering regions (bar-code elements) each exhibiting a relatively high degree of reflection-scattering of irradiated probe light. The high-scattering regions are separated from one another by respective low-scattering regions each exhibiting a relatively low degree of reflection-scattering of incident probe light. For example, the low-scattering regions have smooth surfaces from which very little probe light is reflection-scattered, wherein each high-scattering region includes multiple scattering features such as line, channels, projections, or the like that provide multiple edges and/or points that reflection-scatter probe light. The edges in a high-scattering region can be arranged with a line-space (L/S) pitch that is below the resolution limit of an optical system that delivers probe light to the bar code and detects probe light reflection-scattered from the bar code.

摘要翻译： 公开了包括高对比度掩模版识别码（条形码）的微光刻掩模版。 条形码被配置为每个呈现相对较高程度的被照射的探测光的反射散射的高散射区域（条形码元素）的图案（通常是线性排列的）。 高散射区域通过各自表现出相对低的入射探测光的反射散射程度的低散射区域彼此分离。 例如，低散射区域具有很少的探针光被反射散射的平滑表面，其中每个高散射区域包括多个散射特征，例如线，通道，突起等，其提供多个边缘和/或 指向反射 - 散射探测灯。 高散射区域中的边缘可以布置成线性空间（L / S）间距，其低于将探测光传送到条形码的光学系统的分辨率极限，并且检测从杆反射散射的探测光 码。

公开(公告)号：US20030085363A1

公开(公告)日：2003-05-08

申请号：US10264004

申请日：2002-10-02

申请人： Nikon Corporation

发明人： Teruaki Okino

IPC分类号： H01J037/304

CPC分类号： H01J37/3045 ,  H01J2237/30438 ,  H01J2237/3175

摘要： In the context of charged-particle-beam (CPB) microlithography methods and systems, methods are disclosed for detecting the incidence orthogonality of a patterned beam on the lithographic substrate. In an embodiment, the position of reticle-fiducial-mark images, as formed on the substrate stage at a position Z1, are detected at two lateral positions of a corresponding reticle fiducial mark. A distance L1 between the images is determined. Then, the substrate stage is moved to a position Z2, at which the position of reticle-fiducial-mark images are detected at two lateral positions of the corresponding reticle fiducial mark. A distance L2 between the images is determined. The incidence-orthogonality error nullnull is calculated by substitution into nullnullnull(L1nullL2)/2nullH. The projection-optical system of the CPB microlithography apparatus is adjusted so that nullnullnull0.

摘要翻译： 在带电粒子束（CPB）微光刻方法和系统的背景下，公开了用于检测图案化光束在光刻基片上的入射正交性的方法。 在一个实施例中，在对应的标线基准标记的两个横向位置处检测到在位置Z1处形成在基板台上的标线片基准标记图像的位置。 确定图像之间的距离L1。 然后，将基板台移动到位置Z2，在该位置Z2，在相应的标线基准标记的两个横向位置处检测标线基准标记图像的位置。 确定图像之间的距离L2。 通过替换为DELTAtheta =（L1-L2）/ 2DELTAH计算发生率 - 正交性误差DELTAtheta。 调整CPB微光刻设备的投影光学系统，使DELTAta = 0。

公开(公告)号：US20010046631A1

公开(公告)日：2001-11-29

申请号：US09860958

申请日：2001-05-17

申请人： Nikon Corporation

发明人： Tomoharu Fujiwara ,  Noriyuki Hirayanagi ,  Kazuaki Suzuki ,  Teruaki Okino

IPC分类号： G03F009/00 ,  G03C005/00 ,  A61N005/00 ,  G21G005/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/70433 ,  H01J37/3174 ,  H01J2237/0453

摘要： Reticles and apparatus for performing charged-particle-beam microlithography, and associated methods, are disclosed, in which the pattern to be transferred to a sensitive substrate is divided according to any of various schemes serving to improve throughput and pattern-transfer accuracy. The methods and apparatus are especially useful whenever a divided stencil reticle is used that includes complementary pattern portions.

摘要翻译： 公开了用于进行带电粒子束微光刻的网状物和设备及其相关方法，其中根据用于提高生产量和图案转印精度的各种方案中的任何一种将要转移到敏感基板的图案进行划分。 当使用包括互补图案部分的分割模板掩模版时，该方法和装置特别有用。

公开(公告)号：US20020036273A1

公开(公告)日：2002-03-28

申请号：US09942856

申请日：2001-08-29

申请人： Nikon Corporation

发明人： Teruaki Okino

IPC分类号： G01J001/00 ,  G01N021/00 ,  G01N023/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31794

摘要： Methods are disclosed for producing reticles for use in charged-particle-beam microlithography. In an exemplary method, a pattern to be formed on a sensitive substrate is designed. For at least certain of the pattern elements, local resizing is determined as appropriate for correcting proximity effects. Corresponding nullinitial valuenull reticle-pattern data is then produced. During drawing of the reticle pattern on a reticle substrate using an electron beam, the beam dose is varied so as to change linewidths of the pattern elements from their respective initial value data. Drawn linewidths also can be changed for pattern elements during drawing. The reticle that is produced exhibits better correction of proximity effects when the pattern is transferred to the sensitive substrate.

摘要翻译： 公开了用于制造用于带电粒子束微光刻的掩模版的方法。 在示例性方法中，设计要在敏感基板上形成的图案。 对于至少某些图案元素，适当地确定局部调整大小以校正邻近效应。 然后产生相应的“初始值”标号图案数据。 在使用电子束在掩模版基板上绘制光罩图案期间，改变光束剂量，以便从它们各自的初始值数据改变图案元件的线宽。 在绘制过程中，绘制线宽也可以更改为图形元素。 当图案转移到敏感基底时，产生的掩模版表现出更好的邻近效应校正。

公开(公告)号：US20020036272A1

公开(公告)日：2002-03-28

申请号：US09942519

申请日：2001-08-29

申请人： Nikon Corporation

发明人： Teruaki Okino

IPC分类号： G01J001/00 ,  G01N021/00 ,  G01N023/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G01N23/02 ,  H01J37/3174 ,  H01J2237/31764

摘要： Charged-particle-beam (CPB) microlithography methods and apparatus are disclosed that suppress increases in reticle temperature caused by CPB irradiation during exposure. The methods and apparatus employ a reticle segmented into subfields or analogous exposure units arranged into minor stripes and at least one major stripe. At least some of the minor stripes comprise a region in which the constituent minor stripes are illuminated multiple times to achieve transfer of the respective pattern portions to a corresponding region on the substrate. Each time a constituent minor stripe is illuminated, the beam energy is reduced, thereby reducing reticle heating. After a subfield in the region has been transferred multiple times to a corresponding transfer subfield on the substrate, the net exposure energy received by the transfer subfield is the same as if the transfer subfield had been exposed only once at a correspondingly higher dose.

摘要翻译： 公开了带电粒子束（CPB）微光刻方法和装置，其抑制曝光期间由CPB照射引起的标线片温度升高。 所述方法和装置采用分割成子场的掩模版或布置成次条纹和至少一个主条纹的类似曝光单元。 至少一些次要条纹包括其中组成次条纹被多次照射的区域，以实现各个图案部分转移到基板上的相应区域。 每次构成次条纹被照亮时，光束能量减小，从而减少了标线加热。 在该区域的子场已被多次转移到衬底上相应的转移子场之后，转移子场接收的净曝光能量与转印子场仅以相应较高剂量曝光一次相同。