发明申请
US20020036272A1 Charged-particle-beam microlithography methods and apparatus providing reduced reticle heating 审中-公开
带电粒子束微光刻法提供减少的掩模版加热

  • 专利标题: Charged-particle-beam microlithography methods and apparatus providing reduced reticle heating
  • 专利标题(中): 带电粒子束微光刻法提供减少的掩模版加热
  • 申请号: US09942519
    申请日: 2001-08-29
  • 公开(公告)号: US20020036272A1
    公开(公告)日: 2002-03-28
  • 发明人: Teruaki Okino
  • 申请人: Nikon Corporation
  • 申请人地址: null
  • 专利权人: Nikon Corporation
  • 当前专利权人: Nikon Corporation
  • 当前专利权人地址: null
  • 优先权: JP2000-258588 20000829
  • 主分类号: G01J001/00
  • IPC分类号: G01J001/00 G01N021/00 G01N023/00
Charged-particle-beam microlithography methods and apparatus providing reduced reticle heating
摘要:
Charged-particle-beam (CPB) microlithography methods and apparatus are disclosed that suppress increases in reticle temperature caused by CPB irradiation during exposure. The methods and apparatus employ a reticle segmented into subfields or analogous exposure units arranged into minor stripes and at least one major stripe. At least some of the minor stripes comprise a region in which the constituent minor stripes are illuminated multiple times to achieve transfer of the respective pattern portions to a corresponding region on the substrate. Each time a constituent minor stripe is illuminated, the beam energy is reduced, thereby reducing reticle heating. After a subfield in the region has been transferred multiple times to a corresponding transfer subfield on the substrate, the net exposure energy received by the transfer subfield is the same as if the transfer subfield had been exposed only once at a correspondingly higher dose.
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