发明申请
- 专利标题: Charged-particle-beam microlithography methods and apparatus providing reduced reticle heating
- 专利标题(中): 带电粒子束微光刻法提供减少的掩模版加热
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申请号: US09942519申请日: 2001-08-29
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公开(公告)号: US20020036272A1公开(公告)日: 2002-03-28
- 发明人: Teruaki Okino
- 申请人: Nikon Corporation
- 申请人地址: null
- 专利权人: Nikon Corporation
- 当前专利权人: Nikon Corporation
- 当前专利权人地址: null
- 优先权: JP2000-258588 20000829
- 主分类号: G01J001/00
- IPC分类号: G01J001/00 ; G01N021/00 ; G01N023/00
摘要:
Charged-particle-beam (CPB) microlithography methods and apparatus are disclosed that suppress increases in reticle temperature caused by CPB irradiation during exposure. The methods and apparatus employ a reticle segmented into subfields or analogous exposure units arranged into minor stripes and at least one major stripe. At least some of the minor stripes comprise a region in which the constituent minor stripes are illuminated multiple times to achieve transfer of the respective pattern portions to a corresponding region on the substrate. Each time a constituent minor stripe is illuminated, the beam energy is reduced, thereby reducing reticle heating. After a subfield in the region has been transferred multiple times to a corresponding transfer subfield on the substrate, the net exposure energy received by the transfer subfield is the same as if the transfer subfield had been exposed only once at a correspondingly higher dose.
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