公开(公告)号：US07700918B2

公开(公告)日：2010-04-20

申请号：US12076355

申请日：2008-03-17

Applicant: Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

Inventor： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC: G01N23/00 ,  H01J37/28 ,  G01R19/00

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

Abstract translation: 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US20100084581A1

公开(公告)日：2010-04-08

申请号：US12244001

申请日：2008-10-02

Applicant: Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

Inventor： Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/047 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

Abstract translation: 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。

公开(公告)号：US20090203226A1

公开(公告)日：2009-08-13

申请号：US12031498

申请日：2008-02-14

Applicant: Geun-young Yeom ,  Byoung-jae Park ,  Sung-woo Kim ,  Jong-tae Lim

Inventor： Geun-young Yeom ,  Byoung-jae Park ,  Sung-woo Kim ,  Jong-tae Lim

IPC: H01L21/316 ,  C23C16/44

CPC classification number: H01L21/3141 ,  C23C16/44 ,  C23C16/45536 ,  H01J2237/0041 ,  H01J2237/08 ,  H01J2237/3142 ,  H01L21/31604

Abstract: A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.

Abstract translation: 提供了一种中性束辅助原子层化学气相沉积（ALCVD）装置，用于均匀沉积填充平坦化层或沟槽的氧化物层，以增加氧化物层的均匀性和密度，使用由中性射束发生器产生的中性光束而无缝隙 或发生在原子层沉积（ALD）或ALD样化学气相沉积（CVD））工艺中的空穴，从而解决当高密度平坦化层或具有宽度为 形成65nm以下，并且改善下一代氧化物层隔离工艺。 中性束辅助ALCVD装置包括：ALCVD装置，其沉积氧化物层以在半导体衬底中形成图案; 以及中性束发生器，其将离子束转换成中性光束，以便去除沉积在图案之间的氧化物层中的接缝或空隙，并将中性光束施加到沉积以形成图案的氧化物层。

公开(公告)号：US20090114815A1

公开(公告)日：2009-05-07

申请号：US11935738

申请日：2007-11-06

Applicant: Bo H. Vanderberg ,  William F. DiVergilio

Inventor： Bo H. Vanderberg ,  William F. DiVergilio

IPC: H01J37/317 ,  B05C5/02 ,  H01J17/16

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/06366

Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

Abstract translation: 一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极 发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

公开(公告)号：US20090026390A1

公开(公告)日：2009-01-29

申请号：US11781700

申请日：2007-07-23

Applicant: Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

Inventor： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055

Abstract: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

Abstract translation: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

公开(公告)号：US07429743B2

公开(公告)日：2008-09-30

申请号：US11202111

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC: H01L49/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Abstract translation: 本发明是提高具有光束的照射系统的光束照射精度的方法。 照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。 光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。 因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。

公开(公告)号：US06930309B1

公开(公告)日：2005-08-16

申请号：US10809980

申请日：2004-03-26

Applicant: Marian Mankos ,  Donald J. Parker

Inventor： Marian Mankos ,  Donald J. Parker

IPC: G01N23/225 ,  G01Q30/02 ,  H01J37/02 ,  H01J37/26

CPC classification number: H01J37/026 ,  G01N23/225 ,  H01J2237/0041 ,  H01J2237/2817

Abstract: One embodiment disclosed relates to a method of electron beam inspection or review of a substrate having insulating materials therein. An area of the substrate is simultaneously exposed to a lower-energy electron beam and an overlapping higher-energy electron beam. The area is subsequently inspected with another electron beam. Another embodiment disclosed relates to an electron beam tool for examination of a substrate having insulating materials therein. A first cathode is configured as an electron source for a lower-energy electron beam, and a second cathode is configured as an electron source for a higher-energy electron beam. At least one electron lens is configured to focus the lower-energy electron beam and the higher-energy electron beam onto an overlapping area of a substrate. An electron beam column is subsequently used to examine the substrate.

Abstract translation: 公开的一个实施例涉及一种电子束检查或回顾其中具有绝缘材料的基板的方法。 基板的面积同时暴露于较低能量的电子束和重叠的高能电子束。 随后用另一电子束检查该区域。 所公开的另一实施例涉及用于检查其中具有绝缘材料的基板的电子束工具。 第一阴极配置为低能电子束的电子源，第二阴极构成为高能电子束的电子源。 至少一个电子透镜被配置为将低能电子束和较高能电子束聚焦到衬底的重叠区域上。 随后使用电子束柱检查衬底。

公开(公告)号：US06879109B2

公开(公告)日：2005-04-12

申请号：US10600775

申请日：2003-06-20

Applicant: Victor M. Benveniste ,  William F. DiVergilio ,  Bo H. Vanderberg

Inventor： Victor M. Benveniste ,  William F. DiVergilio ,  Bo H. Vanderberg

IPC: H01J37/317 ,  H05H1/24

CPC classification number: H01J37/32082 ,  H01J37/3171 ,  H01J37/3266 ,  H01J2237/0041

Abstract: A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

Abstract translation: 公开了一种用于离子束的空间电荷中和的等离子体发生器，并且位于离子注入系统内，可操作以产生离子束并沿着束线路径引导离子束。 等离子体发生器包括可操作以在束线路径的一部分中产生电场的电场产生系统，以及可操作以在束线路径的该部分中产生磁场的磁场产生系统，其中磁场垂直于 电场。 等离子体发生器还包括可操作以在由电场和磁场占据的区域中引入气体的气体源。 该区域中的电子分别由于电场和磁场而在该区域内移动，并且至少一些电子与该区域中的气体碰撞以使一部分气体离子化，从而在该区域中产生等离子体。

公开(公告)号：US20040113093A1

公开(公告)日：2004-06-17

申请号：US10667006

申请日：2003-09-19

Applicant: Epion Corporation

Inventor： Michael E. Mack

IPC: H01J003/14 ,  H01J027/00

CPC classification number: H01J37/026 ,  C23C16/452 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0041 ,  H01J2237/0812

Abstract: System and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components. Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB. The larger currents transport greater quantities of gas in the GCIB. A vented faraday cup beam measurement system maintains beam dosimetry accuracy despite the high gas transport load.

Abstract translation: 通过结合改进的梁和工件中和组件实现气体簇离子束处理的系统和方法。 通过GCIB的空间电荷的低能量电子中和来实现更大的GCIB电流传输。 较大的电流在GCIB中运送更多的气体。 排气法拉第杯梁测量系统保持射束剂量测定精度，尽管气体输送负荷较高。

公开(公告)号：US06734447B2

公开(公告)日：2004-05-11

申请号：US10217547

申请日：2002-08-13

Applicant: Ming Li

Inventor： Ming Li

IPC: H01J37317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041

Abstract: An electron filter for trapping dissociated electrons in an ion implantation chamber. The electron filter typically includes at least one filter element which is connected to a voltage source for applying a positive voltage to the filter element. During an ion implantation process, dissociated electrons are drawn from the interior of the chamber and trapped in the filter element to prevent or reduce contamination of the substrates.

Abstract translation: 用于在离子注入室中捕获离解的电子的电子过滤器。 电子滤波器通常包括至少一个滤波器元件，其连接到用于向滤波器元件施加正电压的电压源。 在离子注入过程中，解离的电子从室的内部被抽出并被捕获在过滤元件中，以防止或减少衬底的污染。