公开(公告)号：US08237235B2

公开(公告)日：2012-08-07

申请号：US12692118

申请日：2010-01-22

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

IPC分类号： H01L29/84 ,  H01L23/495

CPC分类号： B81C1/00095 ,  B81B2203/0384

摘要： A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.

摘要翻译： 提供了一种金属陶瓷多层结构。 金属/陶瓷多层结构的下层具有倾斜的侧壁，从而可以减少或消除金属 - 陶瓷多层结构的开裂。 在一个实施例中，紧邻金属陶瓷多层的底层的侧壁倾斜小于75度。 紧邻金属/陶瓷层下面的层下面的后续层具有倾斜大于75度的侧壁。 以这种方式，对上覆的金属/陶瓷层，特别是在角部施加较小的应力，从而减少金属 - 陶瓷多层的开裂。 金属/陶瓷多层结构包括金属种子层和陶瓷层的一个或多个交替层。

公开(公告)号：US08075945B2

公开(公告)日：2011-12-13

申请号：US12038453

申请日：2008-02-27

申请人： Kensuke Yoshizumi ,  Noriko Harima ,  Tomoko Yamada

发明人： Kensuke Yoshizumi ,  Noriko Harima ,  Tomoko Yamada

IPC分类号： B05D3/06 ,  B05D5/12

CPC分类号： H05K3/1283 ,  B81C1/00095 ,  B81C2201/0184 ,  H01L21/288 ,  H01L21/76879 ,  H01L51/0022 ,  H01L2924/0002 ,  H05K3/125 ,  H05K2203/013 ,  H05K2203/087 ,  H01L2924/00

摘要： In a coating method, such as a droplet discharge method which requires baking, it is an object of the present invention to reduce the baking temperature at the time of forming a wiring and a conductive film. As a feature of the present invention, a composition, in which nanoparticles of a conductive material are dispersed in a solvent, is discharged using a droplet discharge method, and then dried to vaporize the solvent. Then, pretreatment using active oxygen is performed. After which, baking is then performed, whereby a wiring and a conductive film are formed. By performance of the pretreatment by active oxygen before the baking, a baking temperature at the time of forming the wiring and conductive film can be reduced.

摘要翻译： 在需要烘烤的液滴喷射法等涂布方法中，本发明的目的在于降低形成配线时的烧成温度和导电膜。 作为本发明的特征，使用微滴排出法将导电性材料的纳米粒子分散在溶剂中的组合物排出，然后干燥以使溶剂汽化。 然后，进行使用活性氧的预处理。 之后，进行烘烤，由此形成布线和导电膜。 通过在烘烤之前通过活性氧进行预处理，可以降低形成布线时的烘烤温度和导电膜。

公开(公告)号：US07977208B2

公开(公告)日：2011-07-12

申请号：US12982346

申请日：2010-12-30

申请人： Billy D. Ables ,  John C. Ehmke ,  Roland W. Gooch

发明人： Billy D. Ables ,  John C. Ehmke ,  Roland W. Gooch

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L23/04 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00301 ,  H01L23/66 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/16153 ,  H01L2924/00

摘要： A hermetically sealed package includes a lid (14) hermetically bonded to a wafer or substrate (12), with a chamber therebetween defined by a recess (16) in the lid. A circuit device (26) such as MEMS device is provided within the chamber on the substrate. A plurality of vias (41-46) are provided through the substrate, and each have a structure which facilitates a hermetic seal of a suitable level between opposite sides of the substrate. The vias provide electrical communication from externally of the assembly to the device disposed in the chamber.

公开(公告)号：US07928568B2

公开(公告)日：2011-04-19

申请号：US12476671

申请日：2009-06-02

申请人： Shashank Sharma ,  Theodore I Kamins

发明人： Shashank Sharma ,  Theodore I Kamins

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/045 ,  A01H5/10 ,  B81C1/00095 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02653 ,  H01L21/28525 ,  H01L21/76838 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair. Specifically, the nanowire-based device having isolated electrodes comprises: a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.

摘要翻译： 基于纳米线的器件包括一对隔离电极和在该对的隔离电极的各个表面之间桥接的纳米线。 具体地说，具有隔离电极的纳米线基器件包括：具有晶体取向的衬底电极; 作为具有基板电极的晶体取向的外延半导体的凸缘电极; 以及在基板电极和凸缘电极的各个表面之间桥接的纳米线。

公开(公告)号：US07781868B2

公开(公告)日：2010-08-24

申请号：US12388697

申请日：2009-02-19

申请人： David S. Pratt

发明人： David S. Pratt

IPC分类号： H01L29/40

CPC分类号： H01L23/3114 ,  B81C1/00095 ,  H01L21/76898 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/1433 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor substrate having a circuit side with integrated circuits and substrate contacts and a back side, a plurality of through interconnects in the substrate, and redistribution conductors on the back side of the substrate. Each through interconnect includes a via aligned with a substrate contact, and a conductive layer at least partially lining the via in physical and electrical contact with the substrate contact. Each redistribution conductor is formed by a portion of the conductive layer. A system includes a supporting substrate and at least one semiconductor substrate having the through interconnects and the redistribution conductors.

摘要翻译： 半导体部件包括具有集成电路和基板触点的电路侧的半导体基板，以及基板的背面，多个贯通的配线以及基板背侧的再分配导体。 每个通孔互连包括与衬底接触对准的通孔，以及至少部分地衬衬通孔的导电层，其与衬底触点物理和电接触。 每个再分布导体由导电层的一部分形成。 一种系统包括支撑衬底和至少一个具有通孔互连和再分布导体的半导体衬底。

公开(公告)号：US20100133630A1

公开(公告)日：2010-06-03

申请号：US12597137

申请日：2008-04-08

申请人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

发明人： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81C1/00095 ,  H01L21/76898 ,  H01L23/481

摘要： A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

摘要翻译： 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。

公开(公告)号：US20100126688A1

公开(公告)日：2010-05-27

申请号：US12394774

申请日：2009-02-27

申请人： Shigenobu SEKINE ,  Yurina Sekine ,  Ryuji Kimura

发明人： Shigenobu SEKINE ,  Yurina Sekine ,  Ryuji Kimura

IPC分类号： B22D27/15 ,  B22D19/00

CPC分类号： B22D19/00 ,  B81B2207/07 ,  B81C1/00095 ,  H01L21/486 ,  H01L21/76882 ,  H01L2924/0002 ,  H05K3/101 ,  H05K3/4038 ,  H05K2201/0305 ,  H05K2203/025 ,  H05K2203/0278 ,  H05K2203/085 ,  H05K2203/128 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T29/49984 ,  Y10T29/49988 ,  Y10T29/49991 ,  Y10T29/49993 ,  H01L2924/00

摘要： The present invention includes a step of cooling a molten metal within a fine space present in the inside of an object and hardening it while applying a forced external force exceeding atmospheric pressure to the molten metal. The fine space is opened on the outer surface of the object in terms of one end thereof. The forced external force is given by at least one member selected among a pressing pressure, an injection pressure and a rolling compaction and applied to the molten metal from the opening surface side on which the fine space is opened, in a state that the other end side of the fine space is closed.

摘要翻译： 本发明包括在存在于物体内部的微细空间内冷却熔融金属并使其在施加超过大气压的强制外力对其进行硬化的步骤。 在物体的外表面上的细长空间的一端开口。 强制外力由选自按压压力，注射压力和轧制压实中的至少一个构件提供，并且在从其开口的开口表面侧向熔融金属施加的另一端 一边的精细空间是封闭的。

公开(公告)号：US07696064B2

公开(公告)日：2010-04-13

申请号：US11870624

申请日：2007-10-11

申请人： Qing Gan ,  Anthony LoBianco

发明人： Qing Gan ,  Anthony LoBianco

IPC分类号： H01L21/46 ,  H01L21/302

CPC分类号： H01L21/76898 ,  B81C1/00095 ,  B81C1/00238 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

摘要： A through via is constructed in a two-stage process. A void in a portion of the depth of the substrate is filled from a first surface of the semiconductor substrate creating an enclosed volume within the substrate. Thereafter, the enclosed volume is exposed and the remaining portion of the void is filled.

摘要翻译： A通孔在两级过程中构建。 在半导体衬底的第一表面上填充衬底的深度的一部分中的空隙，从而在衬底内产生封闭的体积。 此后，封闭的体积被暴露，空隙的剩余部分被填充。

公开(公告)号：US20090227068A1

公开(公告)日：2009-09-10

申请号：US12468520

申请日：2009-05-19

申请人： Billy D. Ables ,  John C. Ehmke ,  Roland W. Gooch

发明人： Billy D. Ables ,  John C. Ehmke ,  Roland W. Gooch

IPC分类号： H01L21/50

CPC分类号： H01L23/04 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00301 ,  H01L23/66 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/16153 ,  H01L2924/00

摘要： A hermetically sealed package includes a lid (14) hermetically bonded to a wafer or substrate (12), with a chamber therebetween defined by a recess (16) in the lid. A circuit device (26) such as MEMS device is provided within the chamber on the substrate. A plurality of vias (41-46) are provided through the substrate, and each have a structure which facilitates a hermetic seal of a suitable level between opposite sides of the substrate. The vias provide electrical communication from externally of the assembly to the device disposed in the chamber.

摘要翻译： 气密密封的包装件包括密封地结合到晶片或基底（12）上的盖子（14），其中腔室由盖子中的凹槽（16）限定。 诸如MEMS器件的电路器件（26）设置在衬底上的腔室内。 多个通孔（41-46）设置穿过衬底，并且每个通孔具有促进在衬底的相对侧之间的适当水平的气密密封的结构。 通孔提供从组件外部到设置在腔室中的装置的电连通。

公开(公告)号：US20090098731A1

公开(公告)日：2009-04-16

申请号：US11870624

申请日：2007-10-11

申请人： Qing Gan ,  Anthony LoBianco

发明人： Qing Gan ,  Anthony LoBianco

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  B81C1/00095 ,  B81C1/00238 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

摘要： A through via is constructed in a two-stage process. A void in a portion of the depth of the substrate is filled from a first surface of the semiconductor substrate creating an enclosed volume within the substrate. Thereafter, the enclosed volume is exposed and the remaining portion of the void is filled.

摘要翻译： A通孔在两级过程中构建。 在半导体衬底的第一表面上填充衬底的深度的一部分中的空隙，从而在衬底内产生封闭的体积。 此后，封闭的体积被暴露，空隙的剩余部分被填充。