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    INTEGRATED BIOLOGICAL SENSING PLATFORM
    21.
    发明申请
    INTEGRATED BIOLOGICAL SENSING PLATFORM 有权

    公开(公告)号：US20220299468A1

    公开(公告)日：2022-09-22

    申请号：US17826882

    申请日：2022-05-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Tsung-Tsun CHEN ,  Allen Timothy Chang ,  Jui-Cheng Huang

    IPC: G01N27/414 ,  B01L3/00

    Abstract: In an embodiment, a device includes: an electrode configured to change a contact angle of a liquid droplet above the electrode when a first voltage is applied to the electrode; a sensing film overlaying the electrode, wherein the electrode is configured for assessment of a state of the liquid droplet based on a second voltage sensed at the electrode; a reference electrode above the electrode, the reference electrode configured to provide a reference voltage; and a microfluidic channel between the electrode and the reference electrode, wherein the microfluidic channel is configured to manipulate the liquid droplet using the electrode.

    Miniaturized fluid manipulation system
    22.
    发明授权
    Miniaturized fluid manipulation system 有权

    公开(公告)号：US10702869B2

    公开(公告)日：2020-07-07

    申请号：US15705730

    申请日：2017-09-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chin-Hua Wen ,  Jui-Cheng Huang

    IPC: B01L3/00 ,  F16K99/00 ,  G01N35/08 ,  G01N33/53 ,  G05D16/20 ,  G01N27/327 ,  G01N15/06 ,  G01N27/414 ,  G01N15/00

    Abstract: A fluidic testing platform and methods of its operation are described. The fluidic cartridge includes a first fluidic channel and a wheel assembly coupled to the first fluidic channel. The wheel assembly includes a center portion coupled to the first fluidic channel and designed to deliver fluid through one or more second fluidic channels that radiate outward from the center portion. The wheel assembly also includes a third fluidic channel arranged in a closed loop and one or more capillaries coupled to an outer surface of the third fluidic channel and arranged to radiate outward from the center portion. The wheel assembly is designed to rotate such that fluid is forced outward from the center portion through the one or more capillaries.

    HIGH SENSITIVITY ISFET SENSOR
    23.
    发明申请
    HIGH SENSITIVITY ISFET SENSOR 审中-公开

    公开(公告)号：US20200173958A1

    公开(公告)日：2020-06-04

    申请号：US16413865

    申请日：2019-05-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Katherine H. Chiang ,  Jui-Cheng Huang ,  Ke-Wei Su ,  Tung-Tsun Chen ,  Wei Lee ,  Pei-Wen Liu

    IPC: G01N27/414 ,  G01N27/02 ,  G01N33/543

    Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.

    Integrated circuit device with adaptations for multiplexed biosensing
    25.
    发明授权
    Integrated circuit device with adaptations for multiplexed biosensing 有权

    公开(公告)号：US10393695B2

    公开(公告)日：2019-08-27

    申请号：US16165748

    申请日：2018-10-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

    IPC: H01L21/00 ,  G01N27/414 ,  H01L23/34 ,  H01L27/085 ,  H01L27/16 ,  H01L27/02

    Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.

    MEMS humidity sensor and method of manufacturing the same
    26.
    发明授权
    MEMS humidity sensor and method of manufacturing the same 有权

    公开(公告)号：US10101292B2

    公开(公告)日：2018-10-16

    申请号：US15053906

    申请日：2016-02-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tung-Tsun Chen ,  Chia-Hua Chu ,  Jui-Cheng Huang ,  Chun-Wen Cheng ,  Cheng-Hsiang Hsieh

    IPC: G01N19/00 ,  G01N27/22

    Abstract: A micro-electro mechanical system (MEMS) humidity sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which the second substrate includes a conductive layer facing the sensing structure, and a first space between the first substrate and the sensing structure is communicated with or isolated from outside, and a second space between the conductive layer and the sensing structure is communicated with an atmosphere, and the sensing structure, the second space and the conductive layer constitute a capacitor configured to measure permittivity of the atmosphere, and humidity of the atmosphere is derived from the permittivity of the atmosphere, pressure of the atmosphere and temperature.

    Systems and methods for a high gain bandwidth, low power trans-impedance voltage gain amplifier (TIVA) topology
    27.
    发明授权
    Systems and methods for a high gain bandwidth, low power trans-impedance voltage gain amplifier (TIVA) topology 有权
    用于高增益带宽，低功率跨阻抗电压增益放大器（TIVA）拓扑的系统和方法

    公开(公告)号：US08994464B2

    公开(公告)日：2015-03-31

    申请号：US13647468

    申请日：2012-10-09

    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

    Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang

    IPC: H03B5/30 ,  H03G3/30

    CPC classification number: H03B5/30 ,  H03F2200/36 ,  H03G3/3036

    Abstract: An amplifier and oscillator system includes a MEMS resonator and a two stage amplifier topology. The MEMS resonator is configured to generate a resonator signal. The two-stage amplifier topology is configured to amplify the resonator signal with a selected trans-impedance gain. Additionally, the two stage amplifier topology yields a feedback resistance that provides the selected trans-impedance gain.

    Abstract translation: 放大器和振荡器系统包括MEMS谐振器和两级放大器拓扑。 MEMS谐振器被配置为产生谐振器信号。 两级放大器拓扑被配置为以选定的跨阻增益放大谐振器信号。 另外，两级放大器拓扑产生提供所选择的跨阻抗增益的反馈电阻。

    Integrated circuit with BioFETs
    28.
    发明授权
    Integrated circuit with BioFETs 有权

    公开(公告)号：US12222317B2

    公开(公告)日：2025-02-11

    申请号：US18525583

    申请日：2023-11-30

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

    IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

    Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

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