公开(公告)号：US5585292A

公开(公告)日：1996-12-17

申请号：US383494

申请日：1995-02-03

Applicant: Tatsuo Morita ,  Robert J. Markunas

Inventor： Tatsuo Morita ,  Robert J. Markunas

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L21/265

CPC classification number: H01L29/66757 ,  H01L21/28008 ,  H01L21/28158 ,  H01L29/4908 ,  H01L29/66765

Abstract: A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insulator comprises an ONO structure having an interfacial oxide layer in contact with the polycrystalline silicon semiconductor layer, a cap oxide layer in contact with the gate electrode, and a nitride layer interposed between the interfacial oxide layer and the nitride layer.

Abstract translation: 薄膜晶体管包括插入在栅极电极和多晶硅半导体层之间的绝缘体，其中多晶硅半导体层具有在源极区域和漏极区域之间具有沟道的源极区域和漏极区域。 绝缘体包括具有与多晶硅半导体层接触的界面氧化物层的ONO结构，与栅电极接触的帽氧化物层和插入在界面氧化物层和氮化物层之间的氮化物层。

公开(公告)号：US5504020A

公开(公告)日：1996-04-02

申请号：US307068

申请日：1994-09-16

Applicant: Shigeru Aomori ,  Atsushi Yoshinouchi ,  Keiji Tarui ,  Tatsuo Morita

Inventor： Shigeru Aomori ,  Atsushi Yoshinouchi ,  Keiji Tarui ,  Tatsuo Morita

IPC: H01L21/266 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/78675 ,  H01L21/2236 ,  H01L21/3003 ,  H01L27/1214 ,  H01L29/66757 ,  H01J2237/31701

Abstract: A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1.times.10.sup.19 ions/cm.sup.3 to 1.times.10.sup.20 ions/cm.sup.3.

Abstract translation: 一种制造薄膜晶体管的方法包括以下步骤：在绝缘基板上形成半导体层和栅电极，其间插有栅绝缘膜; 以及通过使用用于形成栅极的栅电极和抗蚀剂掩模中的至少一个来加速元素周期表中第III族元素或第V族元素的氢离子和离子，将杂质元素注入到半导体层的表面中 电极作为掩模，以便同时进行源区和漏区的形成和沟道区的氢化，其中半导体层的沟道区中的氢离子的浓度在1×1019离子/ cm 3至1×1020离子的范围内 / cm3。

公开(公告)号：US5393986A

公开(公告)日：1995-02-28

申请号：US942663

申请日：1992-09-09

Applicant: Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto

Inventor： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto

IPC: C23C14/48 ,  C23C14/54 ,  H01J37/05 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24507 ,  H01J2237/24585

Abstract: An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.

Abstract translation: 具有用于产生离子的等离子体源的离子注入装置，用于加速产生的离子的离子加速器以及设置在加速离子照射的位置上的基板保持器，其中通过电磁测量所需种类的离子的电流密度 离子能量分析仪具有电场和磁场，从而控制离子的剂量。

公开(公告)号：US5183725A

公开(公告)日：1993-02-02

申请号：US592443

申请日：1990-10-01

Applicant: Hiromi Nishino ,  Keiji Tarui ,  Hideyuki Toyoshi ,  Tatsuo Morita

Inventor： Hiromi Nishino ,  Keiji Tarui ,  Hideyuki Toyoshi ,  Tatsuo Morita

IPC: G02F1/1343 ,  G03F7/30 ,  H01L31/18

CPC classification number: H01L31/1884 ,  G02F1/13439 ,  G03F7/30 ,  Y02E10/50

Abstract: An electrode pattern forming method comprising the steps of: forming a transparent conductive film on a substrate, covering said transparent conductive film with an aluminum film, forming a resist material film for etching on said aluminum film, exposing said resist material film followed by developing by immersing said substrate in an electrolyte to form a resist pattern, and patterning said aluminum film using said resist pattern as a mask;the formation of said resist pattern in said electrolyte being conducted with another transparent conductive film which is in direct contact with said electrolyte and electrically connected to said aluminum film.

公开(公告)号：US5120667A

公开(公告)日：1992-06-09

申请号：US778750

申请日：1991-10-18

Applicant: Keiji Tarui ,  Tatsuo Morita ,  Shuhei Tsuchimoto

Inventor： Keiji Tarui ,  Tatsuo Morita ,  Shuhei Tsuchimoto

IPC: H01L21/3213 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC classification number: H01L29/66757 ,  H01L21/32137 ,  H01L27/1214

Abstract: A TFTs fabricating process practicable at a low temperature, which includes the steps of forming a multi-layer body on a substrate, the multi-layer body including a semiconductor layer, a gate insulating layer and a lower thin layer, patterning the multi-layer body into islands, thereby removing the other portions of the multi-layer body, forming an insulating layer on the sides of the island-patterned multi-layered portion by etching at a selective ratio between the constituents of the insulating layer and the lower thin layer, forming an upper thin layer, and etching the upper and lower thin layers into upper and lower gate electrodes by use of one resist pattern.

公开(公告)号：US5072090A

公开(公告)日：1991-12-10

申请号：US558803

申请日：1990-07-27

Applicant: Tatsuo Morita

Inventor： Tatsuo Morita

IPC: B23K11/24 ,  B23K11/25

CPC classification number: B23K11/252 ,  B23K11/243

Abstract: There is described an inverter type resistance welding machine comprising one rectifier, one inverter connected in series to the rectifier, and a plurality of welding current elements connected in series between a plurality of welding transformers and an output of one inverter. It is possible to reduce the space of installation of the resistance welding machine and cost involved in the installation thereof and reduce a weld time.

Abstract translation: 描述了一种逆变器型电阻焊机，其包括一个整流器，一个与整流器串联的逆变器，以及串联连接在多个焊接变压器和一个逆变器的输出端之间的多个焊接电流元件。 可以减少电阻焊机的安装空间和安装所涉及的成本，并减少焊接时间。

公开(公告)号：US4739149A

公开(公告)日：1988-04-19

申请号：US021115

申请日：1987-03-03

Applicant: Toshihiro Nishiwaki ,  Tatsuo Morita

Inventor： Toshihiro Nishiwaki ,  Tatsuo Morita

IPC: G01R19/165 ,  B23K9/10

CPC classification number: B23K9/10

Abstract: A current sensor assures the detection of a current flowing through a welder conductor without requiring a particular power source, and indicates the current state with the aid of a lamp. In one embodiment, a welder conductor penetrates a toroidal core across which connects a slider resistor whose sliding arm connects through a rectifier circuit, and a parallel circuit of a capacitor and a resistor, to a lamp. A second embodiment imterposed between the parallel circuit and lamp wherein a series circuit of a second resistor and a Zener diode, and a transistor base is connected to a connection point between the second resistor and a Zener diode, and the emitter-collector circuit of which transistor drives the lamp. A third embodiment adds a further series circuit of another lamp and resistor across the parallel circuit and across the series circuit of the second resistor and the Zener diode. Also, the collector of the transistor is connected to the control terminal of a thyristor, the cathode of which thyristor is connected to the output terminal of the rectifier circuit and to the anode of which thyristor the lamp is connected. The other end of which lamp connects to the other output terminal of said rectifier circuit.

Abstract translation: 电流传感器确保检测流过焊接导体的电流，而不需要特定的电源，并借助于灯指示当前状态。 在一个实施例中，焊接导体穿过环形芯，跨越其的滑动电阻器，其滑动电阻器通过整流器电路连接到电容器和电阻器的并联电路到灯。 并联电路和灯之间的第二实施例，其中第二电阻器和齐纳二极管的串联电路和晶体管基极连接到第二电阻器和齐纳二极管之间的连接点，并且其发射极 - 集电极电路 晶体管驱动灯。 第三实施例在并联电路和跨第二电阻器和齐纳二极管的串联电路之间增加另一个灯和电阻器的另一个串联电路。 此外，晶体管的集电极连接到晶闸管的控制端子，其晶闸管的阴极连接到整流器电路的输出端子以及与灯连接的晶闸管的阳极。 该灯的另一端连接到所述整流电路的另一输出端。

公开(公告)号：US4387681A

公开(公告)日：1983-06-14

申请号：US230289

申请日：1981-01-30

Applicant: Kenji Ikeura ,  Tatsuo Morita

Inventor： Kenji Ikeura ,  Tatsuo Morita

IPC: F02D41/10 ,  F02D17/02 ,  F02D41/12 ,  F02M3/045 ,  F02D33/00

CPC classification number: F02M3/045 ,  F02D41/123

Abstract: Fuel consumption of a declerating automotive vehicle internal combustion engine is reduced while preventing stalling. In response to a valve for selectively supplying air and fuel to the engine being in a fully closed condition, a first signal is derived. In response to the engine speed dropping below a first predetermined value a second signal is derived. In response to derivation of the first and second signals a controller for the valve is activated. The controller responds to engine and brake responsive parameters of the vehicle for opening the valve in respone to any of: (a) the engine being decelerated under no load, and (b) the brake being abruptly applied and (c) the engine speed dropping below a second value. The second value is less than the first value and is determined in response to the rate of change of engine speed.

Abstract translation: 减速机车内燃机的燃油消耗减少，同时防止停车。 响应于用于选择性地向处于完全关闭状态的发动机供应空气和燃料的阀，得到第一信号。 响应于发动机转速下降到第一预定值以下，得到第二信号。 响应于第一和第二信号的推导，阀的控制器被激活。 控制器响应车辆的发动机和制动响应参数，以打开阀门中的任何一个：（a）发动机在空载下减速，（b）制动器突然施加，（c）发动机转速下降 低于第二个值。 第二值小于第一值，并且响应于发动机转速的变化率来确定。

公开(公告)号：US08344463B2

公开(公告)日：2013-01-01

申请号：US12681567

申请日：2009-07-10

Applicant: Manabu Yanagihara ,  Kazushi Nakazawa ,  Tatsuo Morita ,  Yasuhiro Uemoto

Inventor： Manabu Yanagihara ,  Kazushi Nakazawa ,  Tatsuo Morita ,  Yasuhiro Uemoto

IPC: H01L27/88

CPC classification number: H01L27/088 ,  H01L23/481 ,  H01L23/4824 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.

Abstract translation: 双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到 第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。

公开(公告)号：US08240166B2

公开(公告)日：2012-08-14

申请号：US12430153

申请日：2009-04-27

Applicant: Noriyo Nishijima ,  Shigeo Ohashi ,  Nariaki Shigyo ,  Tatsuo Morita

Inventor： Noriyo Nishijima ,  Shigeo Ohashi ,  Nariaki Shigyo ,  Tatsuo Morita

IPC: F25D23/12

CPC classification number: G03B21/16

Abstract: An electronic equipment includes a cooling system using boiling and condensation of a refrigerant, especially stabilizes the cooling performance, and reduces the influence which vibration accompanying phase change of boiling and condensation gives to the electronic equipment. Electronic equipment includes a cooling system including a cooling part which cools heat generating from a heat generator such as a heat generating component by using boiling of a refrigerant and is thermally connected to the heat generator such as the heat generating element, a heat radiation part which radiates heat absorbed by the refrigerant in the cooling part by condensation, a refrigerant drive part for delivering the condensed refrigerant to the cooling part again, and piping which fluidly connects them, and the electronic equipment includes preliminary heating means for heating the refrigerant, which flows to the cooling part from the refrigerant drive part, between the refrigerant drive part and the cooling part.

Abstract translation: 电子设备包括使用制冷剂的沸腾和冷凝的冷却系统，特别是稳定冷却性能，并且减少伴随着冷凝相变的振动对电子设备的影响。 电子设备包括冷却系统，其包括冷却部件，该冷却部件通过使用沸腾的制冷剂来冷却来自诸如发热部件的发热部件的发热的热量，并且与发热元件等发热体热连接;热辐射部件 通过冷凝来散发由冷却部中的制冷剂吸收的热量，再次将冷凝后的制冷剂输送到冷却部的制冷剂驱动部以及流体连接它们的管路，电子设备包括用于加热流过的制冷剂的预热装置 从制冷剂驱动部分到制冷剂驱动部分和冷却部分之间的冷却部分。