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公开(公告)号：US10036909B2
公开(公告)日：2018-07-31
申请号：US15550816
申请日：2016-03-03
发明人： Kohhei Tanaka , Tomohiro Kimura , Masahiro Mitani , Takayuki Nishiyama , Hisashi Watanabe , Youhei Nakanishi , Ryuzo Yuki , Masayuki Kanehiro , Seiichi Uchida , Toshihiro Yanagi
IPC分类号： G02F1/1333 , G02F1/1362 , F21V8/00 , G02F1/1339 , G02F1/1341 , G09G3/36
CPC分类号： G02F1/133308 , G02B6/005 , G02B6/0068 , G02B6/009 , G02F1/1333 , G02F1/1339 , G02F1/1341 , G02F1/134309 , G02F1/1345 , G02F1/136286 , G02F2201/56 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2320/0233 , G09G2380/02
摘要： A liquid crystal display device (a display device) includes a liquid crystal panel (a display panel) having an outer peripheral edge portion having a substantially circular shape and including linear edge portions that are linear at a part of the outer peripheral edge portion, and flexible printed circuit boards (mounting components) mounted in an outer portion of the liquid crystal display panel to match arrangement of the linear edge portions in a circumferential direction.
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公开(公告)号：US09570469B2
公开(公告)日：2017-02-14
申请号：US14438687
申请日：2013-10-18
发明人： Seiichi Uchida
IPC分类号： G02F1/1343 , H01L27/12 , G02F1/1333 , G02F1/1368 , H01L29/24 , H01L29/417 , H01L29/786 , G02F1/1362
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/136227 , G02F1/136277 , G02F1/136286 , G02F1/1368 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/41733 , H01L29/7869 , H01L29/78693
摘要： An active matrix substrate (100) includes: a gate electrode (12) formed on a substrate; an oxide semiconductor layer (16); a source electrode (14); a drain electrode (15A); a drain connecting portion (15B) as an extended portion of the drain electrode (15A); a first transparent conductive layer (22, 24); and a second transparent conductive layer (26), wherein: the drain connecting portion (15B) is arranged close to the drain electrode (15A); and the drain electrode (15A) extends from a connecting portion thereof for connection with the oxide semiconductor layer (16), across an edge of the gate electrode (12), and to the drain connecting portion (15B), where a width of the drain electrode (15A) is smaller than a width of the drain connecting portion (15B).
摘要翻译： 有源矩阵基板（100）包括：形成在基板上的栅电极（12）; 氧化物半导体层（16）; 源电极（14）; 漏电极（15A）; 漏极连接部分（15B）作为所述漏极电极（15A）的延伸部分; 第一透明导电层（22,24）; 和第二透明导电层（26），其中：所述漏极连接部分（15B）靠近所述漏电极（15A）布置; 并且所述漏极电极（15A）从其与所述氧化物半导体层（16）连接的连接部分延伸穿过所述栅极电极（12）的边缘，并且到所述漏极连接部分（15B）的宽度为 漏电极（15A）的宽度小于漏极连接部（15B）的宽度。
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公开(公告)号：US09520476B2
公开(公告)日：2016-12-13
申请号：US14375912
申请日：2013-01-24
发明人： Tadayoshi Miyamoto , Kazuatsu Ito , Shigeyasu Mori , Mitsunobu Miyamoto , Yasuyuki Ogawa , Makoto Nakazawa , Seiichi Uchida , Takuya Matsuo
IPC分类号： H01L29/49 , H01L27/12 , H01L21/441 , H01L29/786 , H01L29/66 , H01L27/32
CPC分类号： H01L29/4908 , H01L21/441 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device (100A) includes a substrate (2), an oxide semiconductor layer (5) formed on the substrate (2), source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5), a first transparent electrode (7) electrically connected to the drain electrode (6d), a dielectric layer (8) formed on the source and drain electrodes (6s, 6d), and a second transparent electrode (9) formed on the dielectric layer (8). The upper and/or lower surface(s) of the first transparent electrode (7) contacts with a reducing insulating layer (8a) with the property of reducing an oxide semiconductor included in the oxide semiconductor layer (5). The second transparent electrode (9) overlaps at least partially with the first transparent electrode (7) via the dielectric layer (8). The oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of the same oxide film.
摘要翻译： 半导体器件（100A）包括基板（2），形成在基板（2）上的氧化物半导体层（5），与氧化物半导体层（5）电连接的源极和漏极（6s，6d） 电连接到漏电极（6d）的透明电极（7），形成在源极和漏极（6s，6d）上的电介质层（8）和形成在电介质层（8）上的第二透明电极（9） 。 第一透明电极（7）的上表面和/或下表面与还原绝缘层（8a）接触，具有还原包含在氧化物半导体层（5）中的氧化物半导体的性质。 第二透明电极（9）经由电介质层（8）至少部分地与第一透明电极（7）重叠。 氧化物半导体层（5）和第一透明电极（7）由相同的氧化膜形成。
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公开(公告)号：US20160358943A1
公开(公告)日：2016-12-08
申请号：US15117161
申请日：2015-02-12
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1368 , H01L29/423 , H01L29/786 , H01L29/24 , H01L29/66 , G02F1/1343 , G02F1/1333
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L29/24 , H01L29/42356 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.
摘要翻译： 有源矩阵基板的每个像素区域包括薄膜晶体管，包括有机绝缘层的层间绝缘层，形成在层间绝缘层上的透明连接层，形成在透明连接层上的无机绝缘层，以及 形成在无机绝缘层上的像素电极。 透明连接层与形成在层间绝缘层中的第一接触孔内的漏电极接触。 像素电极与在无机绝缘层中形成的第二接触孔内部的透明连接层接触。 当从正常方向观察衬底时，第一接触孔和第二接触孔彼此不重叠。 在第一接触孔的内部，第一接触孔的底面和侧壁被透明连接层，无机绝缘层和像素电极覆盖。
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公开(公告)号：US20150255491A1
公开(公告)日：2015-09-10
申请号：US14438687
申请日：2013-10-18
发明人： Seiichi Uchida
IPC分类号： H01L27/12 , G02F1/1362 , H01L29/417 , H01L29/786 , H01L29/24 , G02F1/1368 , G02F1/1333
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/136227 , G02F1/136277 , G02F1/136286 , G02F1/1368 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/41733 , H01L29/7869 , H01L29/78693
摘要： An active matrix substrate (100) includes: a gate electrode (12) formed on a substrate; an oxide semiconductor layer (16); a source electrode (14); a drain electrode (15A); a drain connecting portion (15B) as an extended portion of the drain electrode (15A); a first transparent conductive layer (22, 24); and a second transparent conductive layer (26), wherein: the drain connecting portion (15B) is arranged close to the drain electrode (15A); and the drain electrode (15A) extends from a connecting portion thereof for connection with the oxide semiconductor layer (16), across an edge of the gate electrode (12), and to the drain connecting portion (15B), where a width of the drain electrode (15A) is smaller than a width of the drain connecting portion (15B).
摘要翻译： 有源矩阵基板（100）包括：形成在基板上的栅电极（12）; 氧化物半导体层（16）; 源电极（14）; 漏电极（15A）; 漏极连接部分（15B）作为所述漏极电极（15A）的延伸部分; 第一透明导电层（22,24）; 和第二透明导电层（26），其中：所述漏极连接部分（15B）靠近所述漏电极（15A）布置; 并且所述漏极电极（15A）从其与所述氧化物半导体层（16）连接的连接部分延伸穿过所述栅极电极（12）的边缘，并且到所述漏极连接部分（15B）的宽度为 漏电极（15A）的宽度小于漏极连接部（15B）的宽度。
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公开(公告)号：US20150200303A1
公开(公告)日：2015-07-16
申请号：US14408626
申请日：2013-06-12
发明人： Seiichi Uchida , Yasuyuki Ogawa , Tadayoshi Miyamoto , Kazuatsu Ito , Yutaka Takamaru , Makoto Nakazawa , Mitsunobu Miyamoto
IPC分类号： H01L29/786 , H01L21/441 , H01L29/66 , H01L21/02 , H01L29/45 , H01L29/24
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/441 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/78606
摘要： This semiconductor device (100A) includes: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed over the gate electrode (3); an oxide semiconductor layer (5) formed on the gate insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); a first transparent electrode (7) electrically connected to the drain electrode (6d); an interlayer insulating layer (8a) including portions formed on the source and drain electrodes (6s, 6d); and a second transparent electrode (9) formed on the interlayer insulating layer (8a). At least a portion of the second transparent electrode (9) overlaps with the first transparent electrode (7) with the interlayer insulating layer (8a) interposed between them. And the oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of a same oxide film.
摘要翻译： 该半导体器件（100A）包括：衬底（2）; 形成在所述基板（2）上的栅极（3）; 形成在所述栅电极（3）上方的栅绝缘层（4）; 形成在栅极绝缘层（4）上的氧化物半导体层（5）; 电连接到氧化物半导体层（5）的源极和漏极（6s，6d）; 电连接到漏极（6d）的第一透明电极（7）; 包括形成在源极和漏极（6s，6d）上的部分的层间绝缘层（8a）; 和形成在层间绝缘层（8a）上的第二透明电极（9）。 第二透明电极（9）的至少一部分与第一透明电极（7）重叠，层间绝缘层（8a）介于它们之间。 并且氧化物半导体层（5）和第一透明电极（7）由相同的氧化膜形成。
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公开(公告)号：US20140267464A1
公开(公告)日：2014-09-18
申请号：US14351613
申请日：2012-10-31
发明人： Yutaka Takamaru , Seiji Kaneko , Yasuyuki Ogawa , Kaoru Yamamoto , Kohhei Tanaka , Seiichi Uchida , Noriaki Yamaguchi , Shigeyasu Mori
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3406 , G09G3/3614 , G09G2310/0237 , G09G2320/0247 , G09G2320/0626 , G09G2360/16
摘要： In a display control circuit (200) of a display device, an image pattern detection portion (230) detects whether an image is an anti-flicker pattern or not, and when it is an anti-flicker pattern, a backlight source is driven (typically, such that its luminance changes in the opposite phase relative to luminance changes that would occur), on the basis of predicted values, which are predetermined so as to compensate for the luminance changes that would occur. Moreover, the backlight is not turned on during the scanning period. As a result, flicker due to current leakage, etc., can be reduced or eliminated in a display device for which a scanning period and a scan stop period are set.
摘要翻译： 在显示装置的显示控制电路（200）中，图像图案检测部（230）检测图像是否为防闪烁图案，并且当其为防闪烁图案时，驱动背光源（ 通常，使得其亮度相对于将发生的亮度变化在相反相位变化），基于预定值，预测值来补偿将发生的亮度变化。 此外，在扫描期间背光源未被接通。 结果，在设置了扫描期间和扫描停止期间的显示装置中，可以减少或消除由于电流泄漏等引起的闪烁。
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公开(公告)号：US10698283B2
公开(公告)日：2020-06-30
申请号：US16147407
申请日：2018-09-28
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： G02F1/1368 , G02F1/1335 , G02F1/1339 , H01L29/24 , H01L29/786 , H01L27/12
摘要： A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, and a plurality of columnar spacers. The pixel arrangement is a stripe arrangement including red, green and blue pixel columns. The first substrate includes TFTs, one for each pixel, wherein each TFT includes an oxide semiconductor layer. The second substrate includes a color filter layer and a light-blocking layer. The light-blocking layer includes a plurality of first shading portions extending along the column direction, and a plurality of second shading portions extending along the row direction. Each of the columnar spacers is aligned with one of the second shading portions. At least one of the red, green and blue pixel columns has first pixel boundaries, where one of the second shading portions is present, and second pixel boundaries, where none of the second shading portions present, alternating with each other in the column direction, and the second shading portions are arranged in a staggered arrangement.
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公开(公告)号：US09608008B2
公开(公告)日：2017-03-28
申请号：US15117161
申请日：2015-02-12
发明人： Kuniaki Okada , Seiichi Uchida
IPC分类号： H01L29/10 , H01L27/12 , G02F1/1368 , H01L29/786 , G02F1/1362 , G02F1/1333 , G02F1/1343 , H01L29/24 , H01L29/423 , H01L29/66
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L29/24 , H01L29/42356 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.
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公开(公告)号：US09581843B2
公开(公告)日：2017-02-28
申请号：US14345458
申请日：2012-09-20
发明人： Seiji Kaneko , Kaoru Yamamoto , Yasuyuki Ogawa , Kohhei Tanaka , Seiichi Uchida , Yutaka Takamaru , Shigeyasu Mori
CPC分类号： G02F1/13306 , G09G3/3648 , G09G3/3688 , G09G2310/04 , G09G2320/0285 , G09G2320/0673 , G09G2340/0435
摘要： At the time of partial drive, the levels of voltages applied to data lines SL1 to SLn are switched according to a rewrite frequency set for each region of a display screen. For example, in a still-image display region with a relatively low rewrite frequency, the levels of the voltages applied to the data lines SL1 to SLn are set to be higher than those for a moving-image display region with a relatively high rewrite frequency. By this, the same effect as that obtained when a counter voltage is switched according to the rewrite frequency can be obtained. Thus, flicker occurring in each region of the display screen can be suppressed.
摘要翻译： 在部分驱动时，根据为显示屏幕的每个区域设置的重写频率切换施加到数据线SL1至SLn的电压电平。 例如，在具有相对低的重写频率的静止图像显示区域中，施加到数据线SL1至SLn的电压的电平被设置为高于具有相对高的重写频率的运动图像显示区域的电平 。 由此，可以获得与根据重写频率切换对置电压时获得的效果相同的效果。 因此，可以抑制在显示屏幕的每个区域中出现的闪烁。
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