发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14408626申请日： 2013-06-12
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公开(公告)号： US20150200303A1公开(公告)日： 2015-07-16
- 发明人: Seiichi Uchida , Yasuyuki Ogawa , Tadayoshi Miyamoto , Kazuatsu Ito , Yutaka Takamaru , Makoto Nakazawa , Mitsunobu Miyamoto
- 申请人： Sharp Kabushiki Kaisha
- 优先权： JP2012-140783 20120622
- 国际申请： PCT/JP2013/066168 WO 20130612
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/441 ; H01L29/66 ; H01L21/02 ; H01L29/45 ; H01L29/24
摘要：
This semiconductor device (100A) includes: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed over the gate electrode (3); an oxide semiconductor layer (5) formed on the gate insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); a first transparent electrode (7) electrically connected to the drain electrode (6d); an interlayer insulating layer (8a) including portions formed on the source and drain electrodes (6s, 6d); and a second transparent electrode (9) formed on the interlayer insulating layer (8a). At least a portion of the second transparent electrode (9) overlaps with the first transparent electrode (7) with the interlayer insulating layer (8a) interposed between them. And the oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of a same oxide film.
公开/授权文献
- US09379250B2 Semiconductor device and method for producing same 公开/授权日：2016-06-28
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