发明申请
- 专利标题: ACTIVE MATRIX SUBSTRATE AND METHOD FOR PRODUCING SAME
- 专利标题(中): 有源矩阵基板及其制造方法
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申请号: US15117161申请日: 2015-02-12
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公开(公告)号: US20160358943A1公开(公告)日: 2016-12-08
- 发明人: Kuniaki Okada , Seiichi Uchida
- 申请人: Sharp Kabushiki Kaisha
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 优先权: JP2014-031738 20140221
- 国际申请: PCT/JP2015/053808 WO 20150212
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; G02F1/1362 ; G02F1/1368 ; H01L29/423 ; H01L29/786 ; H01L29/24 ; H01L29/66 ; G02F1/1343 ; G02F1/1333
摘要:
Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.
公开/授权文献
- US09608008B2 Active matrix substrate and method for producing same 公开/授权日:2017-03-28
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