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公开(公告)号：US09593429B2
公开(公告)日：2017-03-14
申请号：US13917841
申请日：2013-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moon Gyu Han , Chul-Joon Heo
CPC classification number: C25D15/00 , C09D4/00 , C25B7/00 , C25D13/02 , C25D13/12 , G02B1/005 , G02B6/1225 , G02B6/13
Abstract: Provided are a method of fabricating a photonic crystal having a desired photonic bandgap, and a method of fabricating a color filter, including providing a photonic crystal solution in which a plurality of colloidal particles that are electrically charged are dispersed, mixing a photopolymerizable monomer mixture in the photonic crystal solution to form a photopolymerizable monomer-crystal mixture, applying an electric field to the photopolymerizable monomer-crystal mixture to electrically control intervals between the plurality of colloidal particles, and irradiating ultraviolet light to the photopolymerizable monomer-crystal mixture to photopolymerize the monomer mixture to form the photonic crystal or the color filter.
Abstract translation: 提供一种制造具有期望的光子带隙的光子晶体的方法，以及制造滤色器的方法，包括提供其中分散多个带电荷的胶体粒子的光子晶体溶液，将可光聚合的单体混合物 所述光子晶体溶液形成可光聚合的单体 - 晶体混合物，向所述可光聚合的单体 - 晶体混合物施加电场以电控制所述多个胶体颗粒之间的间隔，以及向所述可光聚合的单体 - 晶体混合物照射紫外光以使所述单体光聚合 混合以形成光子晶体或滤色器。
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公开(公告)号：US11957046B2
公开(公告)日：2024-04-09
申请号：US16562601
申请日：2019-09-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moon Gyu Han , Dae Young Chung , Kwanghee Kim , Eun Joo Jang , Chan Su Kim , Kun Su Park , Won Sik Yoon
IPC: H10K85/60 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17 , H10K71/00 , H10K71/12 , H10K102/00
CPC classification number: H10K85/633 , H10K85/6572 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17 , H10K71/00 , H10K71/12 , H10K2102/331 , H10K2102/351
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.
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公开(公告)号：US11706936B2
公开(公告)日：2023-07-18
申请号：US18048484
申请日：2022-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwanghee Kim , Moon Gyu Han , Eun Joo Jang , Hyo Sook Jang
CPC classification number: H10K50/115 , C09K11/02 , C09K11/883 , H10K71/00 , B82Y20/00 , B82Y40/00
Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.
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公开(公告)号：US11611054B2
公开(公告)日：2023-03-21
申请号：US17199977
申请日：2021-03-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heejae Lee , Moon Gyu Han , Won Sik Yoon , Eun Joo Jang , Dae Young Chung , Tae Hyung Kim , Hyo Sook Jang
IPC: H01L51/50
Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.
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公开(公告)号：US11171299B2
公开(公告)日：2021-11-09
申请号：US16296505
申请日：2019-03-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hongkyu Seo , Eun Joo Jang , Moon Gyu Han , Tae Ho Kim , Dae Young Chung
Abstract: A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.
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Patent Agency Ranking
公开(公告)号：US11171291B2
公开(公告)日：2021-11-09
申请号：US16372861
申请日：2019-04-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Won Sik Yoon , Moon Gyu Han , Tae Ho Kim , Eun Joo Jang , Hongkyu Seo
Abstract: An electroluminescent device and including a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a quantum dot and a first electron transporting material represented by Chemical Formula 1; a hole transport layer disposed between the emission layer and the first electrode; and an electron transport layer disposed between the emission layer and the second electrode: wherein, the definitions of groups and variables in Chemical Formula 1 are the same as described in the specification.
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27.发明授权公开(公告)号：US11050033B2
公开(公告)日：2021-06-29
申请号：US16391692
申请日：2019-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwanghee Kim , Oul Cho , Chan Su Kim , Tae Hyung Kim , Eun Joo Jang , Moon Gyu Han
IPC: H01L51/50 , C09K11/88 , H01L51/56 , C09K11/08 , C09K11/59 , C09K11/56 , C09K11/54 , C09K11/62 , C09K11/55 , C09K11/74 , C09K11/89 , C09K11/66 , C09K11/65 , C09K11/61 , C09K11/70 , C09K11/64
Abstract: A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.
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公开(公告)号：US10457694B2
公开(公告)日：2019-10-29
申请号：US15850317
申请日：2017-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moon Gyu Han , Seon-Jeong Lim , Takkyun Ro , Kwang Hee Lee , Dong-Seok Leem , Yong Wan Jin , Kyung Bae Park , Sung Young Yun , Gae Hwang Lee , Chul Joon Heo
Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.
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公开(公告)号：US20190214591A1
公开(公告)日：2019-07-11
申请号：US16178692
申请日：2018-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae PARK , Chul Joon Heo , Moon Gyu Han , Yong Wan Jin
CPC classification number: H01L51/4213 , H01L27/14621 , H01L27/307 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0077 , H01L51/0078 , H01L51/0091 , H01L51/4253 , H01L51/441 , H01L2251/552
Abstract: A photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode and configured to convert light in a particular wavelength spectrum of light of a visible wavelength spectrum of light into an electric signal. The photoelectric conversion layer may include a p-type semiconductor configured to selectively absorb light in a first wavelength spectrum and an n-type semiconductor having a peak absorption wavelength in a second wavelength spectrum of greater than or equal to about 750 nm, an image sensor. The photoelectric conversion layer may include a first semiconductor of an absorption spectrum of a first peak absorption wavelength, and a second semiconductor of an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by at least about 100 nm.
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30.发明申请公开(公告)号：US20180282303A1
公开(公告)日：2018-10-04
申请号：US15934069
申请日：2018-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moon Gyu Han , Kyung Bae Park , Dongseon Lee , Yong Wan Jin , Chul Joon Heo
IPC: C07D401/14 , C07D401/04 , C07D403/04 , C07C211/54 , C09B57/00 , G02B5/20 , H04N5/225
Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.
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