Electric device and display device comprising quantum dots with improved luminous efficiency

    公开(公告)号:US11594698B2

    公开(公告)日:2023-02-28

    申请号:US16913575

    申请日:2020-06-26

    Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

    Light emitting device and display device including the same

    公开(公告)号:US11569469B2

    公开(公告)日:2023-01-31

    申请号:US17205015

    申请日:2021-03-18

    Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

    Light emitting device and display device including the same

    公开(公告)号:US11251390B2

    公开(公告)日:2022-02-15

    申请号:US16851276

    申请日:2020-04-17

    Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

    Quantum dot device and electronic device

    公开(公告)号:US11171299B2

    公开(公告)日:2021-11-09

    申请号:US16296505

    申请日:2019-03-08

    Abstract: A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

    Quantum dot device and electronic device

    公开(公告)号:US10446781B2

    公开(公告)日:2019-10-15

    申请号:US16001227

    申请日:2018-06-06

    Abstract: A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.

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