公开(公告)号：US20150364589A1

公开(公告)日：2015-12-17

申请号：US14533802

申请日：2014-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE

IPC: H01L29/775 ,  H01L29/06 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/1606 ,  H01L21/187 ,  H01L21/28512 ,  H01L23/485 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/456 ,  H01L29/7781 ,  H01L29/7839 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a graphene-metal bonding structure, a method of manufacturing the graphene-metal bonding structure, and a semiconductor device including the graphene-metal bonding structure. According to example embodiments, a graphene-metal bonding structure includes: a graphene layer; a metal layer on the graphene layer; and an intermediate material layer between the graphene layer and the metal layer. The intermediate material layer forms an edge-contact with the metal layer from boundary portions of a material contained in the intermediate material layer that contact the metal layer.

Abstract translation: 提供了石墨烯 - 金属结合结构，石墨烯 - 金属结合结构的制造方法以及包括石墨烯 - 金属结合结构的半导体器件。 根据示例性实施例，石墨烯 - 金属结合结构包括：石墨烯层; 石墨烯层上的金属层; 以及石墨烯层和金属层之间的中间材料层。 中间材料层与包含在与金属层接触的中间材料层中的材料的边界部分与金属层形成边缘接触。

公开(公告)号：US20150122315A1

公开(公告)日：2015-05-07

申请号：US14508378

申请日：2014-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Seongjun PARK ,  Jaeho LEE ,  Jinseong HEO

IPC: H01L29/06 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L29/737 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/74 ,  H01L29/792 ,  C01B19/04 ,  C01G41/00 ,  C01G39/06 ,  C01G25/00 ,  C01G27/00 ,  H01L29/24

CPC classification number: H01L29/0665 ,  C01B19/04 ,  C01G25/00 ,  C01G27/00 ,  C01G39/06 ,  C01G41/00 ,  C01P2004/20 ,  C01P2006/40 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/22 ,  H01L29/221 ,  H01L29/24 ,  H01L29/66977 ,  H01L29/73 ,  H01L29/7317 ,  H01L29/737 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/792 ,  H01L29/861 ,  H01L29/8611 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/035281 ,  H01L31/109 ,  Y10T428/24802

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract translation: 根据示例实施例，二维（2D）材料元件可以包括彼此化学键合的第一2D材料和第二2D材料。 第一2D材料可以包括基于硫族化物的第一金属材料。 第二2D材料可以包括第二金属硫族化物基材料。 第二2D材料可以结合到第一2D材料的一侧。 2D材料元件可以具有PN结结构。 2D材料元件可以包括具有不同带隙的多个2D材料。

公开(公告)号：US20240178144A1

公开(公告)日：2024-05-30

申请号：US18521994

申请日：2023-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Sangwon KIM ,  Changhyun KIM ,  Baekwon PARK ,  Kyung-Eun BYUN

IPC: H01L23/532

CPC classification number: H01L23/53276 ,  H01L23/53295

Abstract: An interconnect structure may include a first dielectric layer including a trench, a first conductive layer in the trench and including a plurality of first graphene layers stacked in a direction from an inner surface of the trench toward a center of the trench, a second dielectric layer on the first dielectric layer and including a through hole extending to the trench, and a second conductive layer in the through hole.

公开(公告)号：US20230313365A1

公开(公告)日：2023-10-05

申请号：US18332638

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Hyoungsub KIM ,  Taejin PARK ,  Hyeonjin SHIN ,  Hoijoon KIM ,  Wonsik AHN ,  Mirine LEEM

IPC: C23C16/30 ,  B22F7/00 ,  C23C16/46 ,  C23C16/448 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L31/032

CPC classification number: C23C16/305 ,  B22F7/008 ,  C23C16/46 ,  C23C16/448 ,  C23C16/45502 ,  C23C16/45514 ,  H01L21/02568 ,  H01L21/02581 ,  H01L21/28568 ,  H01L31/0324 ,  B22F2207/01 ,  B22F2302/45

Abstract: Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

公开(公告)号：US20230272554A1

公开(公告)日：2023-08-31

申请号：US18298692

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Changseok LEE ,  Hyeonsuk SHIN ,  Hyeonjin SHIN ,  Seokmo HONG ,  Minhyun LEE ,  Seunggeol NAM ,  Kyungyeol MA

IPC: C30B29/38 ,  H01L21/02

CPC classification number: C30B29/38 ,  H01L21/02172 ,  H01L21/02252 ,  H01L21/02293

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

公开(公告)号：US20230114347A1

公开(公告)日：2023-04-13

申请号：US18063909

申请日：2022-12-09

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Changhyun KIM ,  Sang-Woo Kim ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Ahrum SOHN ,  Jaehwan JUNG

IPC: H01L21/02

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

公开(公告)号：US20230079680A1

公开(公告)日：2023-03-16

申请号：US17829679

申请日：2022-06-01

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Keunwook SHIN ,  Kibum KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE

IPC: C01B32/186 ,  C01B32/188 ,  H01L29/41 ,  H01L29/40

Abstract: Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).

公开(公告)号：US20230061267A1

公开(公告)日：2023-03-02

申请号：US17673239

申请日：2022-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40

Abstract: An electronic device including a two-dimensional material is provided. The electronic device may include a substrate; a metal layer on a partial region of the substrate; a two-dimensional material layer over the metal layer and an upper surface of the substrate; and an insertion layer between the metal layer and the two-dimensional material layer.

公开(公告)号：US20220415801A1

公开(公告)日：2022-12-29

申请号：US17902319

申请日：2022-09-02

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE ,  Hyeonsuk SHIN ,  Seokmo HONG

IPC: H01L23/532 ,  H01L23/522

Abstract: An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.

公开(公告)号：US20220406911A1

公开(公告)日：2022-12-22

申请号：US17545373

申请日：2021-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minseok YOO ,  Minsu SEOL ,  Junyoung KWON ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Van Luan NGUYEN

IPC: H01L29/423 ,  H01L29/43

Abstract: Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.