公开(公告)号：US20220406911A1

公开(公告)日：2022-12-22

申请号：US17545373

申请日：2021-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minseok YOO ,  Minsu SEOL ,  Junyoung KWON ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Van Luan NGUYEN

IPC: H01L29/423 ,  H01L29/43

Abstract: Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.

公开(公告)号：US20250105154A1

公开(公告)日：2025-03-27

申请号：US18900133

申请日：2024-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Giyoung JO ,  Sangwon KIM ,  Jaewon KIM ,  Hyeon Jin SHIN ,  Van Luan NGUYEN ,  Chang Seok LEE

IPC: H01L23/532 ,  H01L21/768

Abstract: Disclosed is an interconnect structure including a substrate, a conductive layer on the substrate, and a passivation layer in contact with the conductive layer, where the passivation layer includes a first layer including boron nitride (h-BN) having a hexagonal crystal structure and a second layer including amorphous boron nitride (a-BN), and the first layer is in contact with the conductive layer the first layer.

公开(公告)号：US20220238721A1

公开(公告)日：2022-07-28

申请号：US17505955

申请日：2021-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Minsu SEOL ,  Eunkyu LEE ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/786

Abstract: A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.

公开(公告)号：US20220238692A1

公开(公告)日：2022-07-28

申请号：US17546303

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Minsu SEOL ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO ,  Yeonchoo CHO

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/304 ,  H01L21/463

Abstract: A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.

公开(公告)号：US20240242965A1

公开(公告)日：2024-07-18

申请号：US18414811

申请日：2024-01-17

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Taejin CHOI ,  Minsu KIM ,  Hyeonsuk SHIN ,  Jaewon KIM ,  Taehoon KIM ,  Hyeonjin SHIN ,  Van Luan NGUYEN

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/0262 ,  H01L29/2006 ,  H01L29/66795 ,  H01L29/7851

Abstract: Provided are an amorphous boron nitride film, and a semiconductor device, a field effect transistor and an image sensor which include the same, and a method of manufacturing the amorphous boron nitride film. The amorphous boron nitride film includes a carbon atom-doped amorphous boron nitride compound, wherein an sp2 BN bonding structure and an sp3 BN bonding structure are included in the boron nitride film, an sp2/sp3 conjugated —C═C—C═C— dopant structure being distributed in 60% or less of the entire amorphous film.

公开(公告)号：US20240162337A1

公开(公告)日：2024-05-16

申请号：US18510063

申请日：2023-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Hyeonjin SHIN ,  Minsu SEOL ,  Yunseong LEE

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/778 ,  H01L29/41758 ,  H01L29/42364

Abstract: A semiconductor device including a two-dimensional material is provided. The semiconductor device may include a two-dimensional material layer having semiconductor properties, a self-assembled monolayer in which self-assembled molecules are packed side-by-side, the self-assembled monolayer being arranged on the two-dimensional material layer, and an oxide layer arranged on the self-assembled monolayer.

公开(公告)号：US20240034636A1

公开(公告)日：2024-02-01

申请号：US18359985

申请日：2023-07-27

Applicant: Samsung Electronics Co., Ltd. ,  FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA (ICN2)

Inventor： Stephan ROCHE ,  Aleandro ANTIDORMI ,  Onurcan KAYA ,  Van Luan NGUYEN ,  Hyeonjin SHIN ,  Taejin CHOI ,  Jaewon KIM ,  Taehoon KIM

IPC: C01B35/14

CPC classification number: C01B35/146 ,  C01P2002/02 ,  C01P2002/54

Abstract: An amorphous boron nitride compound may include a boron nitride compound, where the boron nitride compound may be amorphous and may be doped with carbon or hydrogen. In the boron nitride compound, a total content of the carbon or the hydrogen may be in a range of about 0.1 at % to about 35 at % of a total atomic content.

公开(公告)号：US20210163296A1

公开(公告)日：2021-06-03

申请号：US17060893

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Yeonchoo CHO

IPC: C01B32/186

Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.