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    MAGNETORESISTIVE (MR) SENSORS EMPLOYING DUAL MR DEVICES FOR DIFFERENTIAL MR SENSING
    22.
    发明申请
    MAGNETORESISTIVE (MR) SENSORS EMPLOYING DUAL MR DEVICES FOR DIFFERENTIAL MR SENSING 审中-公开

    公开(公告)号：US20180074016A1

    公开(公告)日：2018-03-15

    申请号：US15266342

    申请日：2016-09-15

    Applicant: QUALCOMM Incorporated

    Inventor： Wei-Chuan Chen ,  Jung Pill Kim ,  Seung Hyuk Kang

    IPC: G01N27/74 ,  G01R33/09

    CPC classification number: G01N27/745 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098

    Abstract: Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing are provided. These MR sensors may be used as biosensors to detect the presence of biological materials as an example. An MR sensor includes dual MR sensor devices that may be tunnel magnetoresistive (TMR) devices or giant magnetoresistive (GMR) devices as examples. The MR devices are arranged such that a channel is formed between the MR devices for receiving magnetic nanoparticles. A magnetic stray field generated by the magnetic nanoparticles causes free layers in the MR devices to rotate in opposite directions, thus causing differential resistances between the MR devices for greater sensing sensitivity. Further, as another aspect, by providing the channel between the MR devices, the magnetic stray field generated by the magnetic nanoparticles can more easily rotate the magnetic moment orientation of the free layers in the MR devices, thus further increasing sensitivity.

    SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS
    23.
    发明申请
    SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS 有权
    磁悬浮连接（MTJ）元件的阴影补偿制造

    公开(公告)号：US20170047510A1

    公开(公告)日：2017-02-16

    申请号：US14824507

    申请日：2015-08-12

    Applicant: QUALCOMM Incorporated

    Inventor： Wei-Chuan Chen ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

    CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    Abstract: Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) semiconductor elements is disclosed. Providing shadow-effect compensated fabrication of MTJ elements can provide reduced free layer sizing for enhanced MTJ operational margin. In certain aspects, to reduce size of a free layer during fabrication of an MTJ to provide enhanced write and retention symmetry, ion beam etching (IBE) fabrication process is employed to fabricate a free layer smaller than the pinned layer. To avoid asymmetrical footing being fabricated in free layer due to shadow-effect of neighboring MTJs, an ion beam directed at the MTJ is shadow-effect compensated. The angle of incidence of the ion beam directed at the MTJ is varied as the MTJ is rotated to be less steep when another MTJ is in directional line of the ion beam and the MTJ being fabricated. Thus, the free layer is etched more uniformly in the MTJ while avoiding increased etching damage.

    Abstract translation: 公开了磁隧道结（MTJ）半导体元件的阴影效应补偿制造。 提供影子补偿制造的MTJ元件可以提供减少的自由层施胶，以提高MTJ的运行裕度。 在某些方面，为了减少制造MTJ期间的自由层的尺寸以提供增强的写入和保持对称性，使用离子束蚀刻（IBE）制造工艺来制造小于被钉扎层的自由层。 为了避免由于相邻的MTJ的阴影效应而在自由层中制造不对称的基脚，指向MTJ的离子束是阴影效应补偿的。 当MTJ在离子束的方向线和制造的MTJ的方向线上时，指向MTJ的离子束的入射角度随着MTJ旋转而不太陡峭而变化。 因此，在MTJ中更均匀地蚀刻自由层，同时避免增加蚀刻损伤。

    Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
    26.
    发明授权
    Magnetic tunnel junction and method for fabricating a magnetic tunnel junction 有权
    磁隧道结及其制造方法

    公开(公告)号：US09142762B1

    公开(公告)日：2015-09-22

    申请号：US14229427

    申请日：2014-03-28

    Applicant: QUALCOMM Incorporated

    Inventor： Xia Li ,  Kangho Lee ,  Wei-Chuan Chen ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

    IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

    Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

    Abstract translation: 提供了一种改进的磁性隧道结装置和用于制造改进的磁性隧道结装置的方法。 所提供的双蚀刻工艺减少蚀刻损伤和烧蚀材料再沉积。 在一个实例中，提供了一种制造磁性隧道结（MTJ）的方法。 该方法包括在衬底上形成缓冲层，在衬底上形成底电极，在底电极上形成引脚层，在引脚层上形成阻挡层，并在阻挡层上形成自由层。 第一蚀刻包括蚀刻自由层，而不蚀刻阻挡层，引脚层和底部电极。 该方法还包括在自由层上形成顶部电极，以及在顶部电极上形成硬掩模层。 第二蚀刻包括蚀刻硬掩模层; 顶部电极层，阻挡层，针层和底部电极。

    STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQUE SWITCHING DEVICES
    27.
    发明申请
    STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQUE SWITCHING DEVICES 有权
    转子扭矩开关装置中开关电流的应变诱导减小

    公开(公告)号：US20140206104A1

    公开(公告)日：2014-07-24

    申请号：US14219026

    申请日：2014-03-19

    Applicant: QUALCOMM Incorporated

    Inventor： Xiaochun Zhu ,  Xia Li ,  Wei-Chuan Chen ,  Seung Hyuk Kang

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/325 ,  H01L27/222 ,  H01L41/12 ,  H01L43/08 ,  H01L43/10

    Abstract: Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.

    Abstract translation: 使用在MTJ上引起定向静态应变/应力以增加垂直磁各向异性的工艺和结构构造来构造部分垂直磁各向异性（PPMA）型磁性随机存取存储器单元。 因此，MTJ的开关电流降低。 在制造过程中，受控方向和/或受控幅度诱发MTJ上的定向静态应变/应力。 MTJ永久地受到预定的定向应力，并且永久地包括提供减小的开关电流的定向静态应变/应变。

    MAGNETIC TUNNEL JUNCTION (MTJ) ON PLANARIZED ELECTRODE
    28.
    发明申请
    MAGNETIC TUNNEL JUNCTION (MTJ) ON PLANARIZED ELECTRODE 有权
    平面电极上的磁性隧道结（MTJ）

    公开(公告)号：US20140073064A1

    公开(公告)日：2014-03-13

    申请号：US14086054

    申请日：2013-11-21

    Applicant: QUALCOMM Incorporated

    Inventor： Seung Hyuk Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  H01L43/08

    Abstract: A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

    Abstract translation: 具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。 较低的电阻提高了MTJ中的读取和写入过程。 MTJ层沉积在与底部金属对准的底部电极上。 蚀刻停止层可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。 在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。 另外，可以在MTJ层之前的底部电极上沉​​积底层以促进MTJ的期望特性。

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