摘要:
A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.
摘要:
A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.
摘要:
A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.
摘要:
A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator.
摘要:
A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.
摘要:
There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).
摘要:
There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).
摘要:
An ion beam generator includes a discharge tank for generating plasma that includes ions. A lead-out electrode has an annular grid portion provided with openings for leading out the ions generated in the discharge tank, while accelerating the generated ions as an annular ion beam. A deflecting electrode deflects the annular ion beam, which is led out of the lead-out electrode, in an annular center direction.
摘要:
There is provided an ion beam generating apparatus capable of reducing power consumption and obtain highly-accurate uniformity in a substrate process without providing a mechanism to rotate a substrate. Each of ion beam generating apparatuses 1a and 1b includes a discharging tank for generating plasma, an extraction electrode including an inclined portion arranged so as to be inclined with respect to an irradiated surface for extracting an ion generated in the discharging tank, a rotating driving unit 30 provided out of the discharging tank for rotating the extraction electrode, and a rotation supporting member 31 for coupling the rotating driving unit 30 and the extraction electrode 7, wherein an insulator block 34 arranged around the rotation supporting member 31 is included in the discharging tank.
摘要:
An ion beam generator generates plasma in a discharge tank 2, leads out an annular ion beam by a lead-out electrode 7, and deflects the ion beam in an annular center direction by a deflecting electrode 30 to enter a substrate W from the inclined direction to provide uniformity of the incident ion beam to the substrate without increasing the size of the whole apparatus.