摘要:
Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.
摘要:
An apparatus and method for fast changing a focal length of a charged particle beam the method comprising the step of changing a control signal in response to a relationship between the control signal voltage value and the focal length of the charged particle beam.
摘要:
A radiation grid comprises an absorber including absorbing foil strips extending in a direction of extension for absorbing radiation, the absorbing foil strips being arranged in a direction of arrangement perpendicular to the direction of extension; a first covering member for covering one planar surface of the absorber; a second covering member for covering a surface at the opposite side of the one surface of the absorber; first joint members each provided in an area of adjacence between the first covering member and one of the absorbing foil strips forming the absorber, for integrating the two parts; second joint members each provided in an area of adjacence between the second covering member and one of the absorbing foil strips forming the absorber, for integrating the two parts; and connecting members provided to connect ends in the direction of extension of the absorbing foil strips. The connecting members are disposed clear of a middle portion in the direction of extension of each absorbing foil strip.
摘要:
In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.
摘要:
A device for scanning a beam of charged particles comprises longitudinal and cross-sectional scanning electromagnets (1,4) to deflect the beam, respectively, lengthwise and crosswise over the exit window (2), longitudinal and cross-sectional scanning current generators (5, 6) to energize the respective electromagnets (1, 4), and a variable delayer (7) connected between the longitudinal scanning current generator (5) and the synchronizing input of the cross-sectional scanning current generator (6) so that pulses arrive at the input of the variable delayer (7) at the moments when current in the windings of the electromagnet (1) reaches its peak. The variable delayer (7) provides N delay times different from each other by a value of .DELTA. t and set in succession as the pulses arrive at its input, the values N and .DELTA. t being determined from the following relationships:.DELTA.t.ltoreq.d/2f.sub.1 L; N.gtoreq.1/f.sub.2 .DELTA.twhered--diameter of the charged particle beam,f.sub.1 --frequency of the longitudinal scanning,f.sub.2 --frequency of the cross-sectional scanning,L--value of maximum deflection of the beam along the length of the exit window.
摘要:
A scan corrected vidicon camera apparatus utilizing a spatial reference filter with an array of slits that is fitted directly on the faceplate of a vidicon tube. The spatial reference filter is used in conjunction with perturbations that are injected into the vertical and horizontal sweeps. The resultant video waveform is correlated in a microprocessor unit to linearize the respective sweeps.
摘要:
Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.
摘要:
An ion beam generator generates plasma in a discharge tank 2, leads out an annular ion beam by a lead-out electrode 7, and deflects the ion beam in an annular center direction by a deflecting electrode 30 to enter a substrate W from the inclined direction to provide uniformity of the incident ion beam to the substrate without increasing the size of the whole apparatus.
摘要:
A light beam scanning apparatus includes a sweeping unit for sweeping a light beam in response to a first signal. A photodetector has a plurality of optical gratings arranged in an array in a predetermined direction in which the light beam is swept. The photodetector generates a second signal in response to a movement of the light beam along the grating array. A control circuit generates the first signal in response to the second signal. The control circuit detects a scan speed of the light beam based on the second signal, and adjusts the first signal in response to the detected scan speed to control the scan speed of the light beam such that the detected scan speed substantially coincides with a predetermined speed.
摘要:
Method of and apparatus for scanning a charged particle beam over a semiconductor wafer in a prescribed pattern. A triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down.