Focused ion beam device and focused ion beam processing method
    1.
    发明授权
    Focused ion beam device and focused ion beam processing method 失效
    聚焦离子束装置和聚焦离子束处理方法

    公开(公告)号:US08552397B2

    公开(公告)日:2013-10-08

    申请号:US13513256

    申请日:2010-11-15

    IPC分类号: H01J3/28 G21K1/00

    摘要: Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.

    摘要翻译: 公开了一种光学系统的操作,其实现了与样品台机械倾斜的情况相当的聚焦离子束处理的观察。 在聚焦离子束光学系统中,控制孔径,倾斜偏转器,光束扫描器和物镜,以照射倾斜到光学系统的光轴的离子束,由此实现薄膜处理和交叉 部分处理,而不需要对样品台进行调整和操作。 利用聚焦离子束的薄膜处理和横截面加工可以自动化,并且可以提高收率。 例如,通过将本发明应用于截面监视器来检测终点,可以容易地自动化横截面处理。

    Radiation grid, a radiographic apparatus equipped therewith, and a method of manufacturing the radiation grid
    3.
    发明授权
    Radiation grid, a radiographic apparatus equipped therewith, and a method of manufacturing the radiation grid 失效
    辐射网格,配备其的射线照相设备,以及制造辐射网格的方法

    公开(公告)号:US08744049B2

    公开(公告)日:2014-06-03

    申请号:US12986260

    申请日:2011-01-07

    申请人: Shoji Kuwabara

    发明人: Shoji Kuwabara

    IPC分类号: G21K1/02 G21K1/00 H01J3/28

    摘要: A radiation grid comprises an absorber including absorbing foil strips extending in a direction of extension for absorbing radiation, the absorbing foil strips being arranged in a direction of arrangement perpendicular to the direction of extension; a first covering member for covering one planar surface of the absorber; a second covering member for covering a surface at the opposite side of the one surface of the absorber; first joint members each provided in an area of adjacence between the first covering member and one of the absorbing foil strips forming the absorber, for integrating the two parts; second joint members each provided in an area of adjacence between the second covering member and one of the absorbing foil strips forming the absorber, for integrating the two parts; and connecting members provided to connect ends in the direction of extension of the absorbing foil strips. The connecting members are disposed clear of a middle portion in the direction of extension of each absorbing foil strip.

    摘要翻译: 辐射格栅包括吸收体,该吸收体包括吸收箔片条,其沿延伸方向延伸以吸收辐射,所述吸收箔条沿垂直于延伸方向的排列方向排列; 用于覆盖吸收体的一个平坦表面的第一覆盖部件; 用于覆盖吸收体的一个表面的相反侧的表面的第二覆盖部件; 第一接合构件分别设置在第一覆盖构件和形成吸收体的吸收箔条中的一个之间的相邻区域中,用于整合两个部分; 第二接头构件分别设置在第二覆盖构件和形成吸收体的吸收箔条中的一个之间的相邻区域中,用于使两个部分一体化; 以及连接构件,其设置成在吸收箔条的延伸方向上连接端部。 连接构件在每个吸收箔片条的延伸方向上设置成远离中间部分。

    Method of forming a single crystal semiconductor layer from a
non-single-crystalline material and apparatus for forming the same
    4.
    发明授权
    Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same 失效
    从非单晶材料形成单晶半导体层的方法及其形成装置

    公开(公告)号:US4746803A

    公开(公告)日:1988-05-24

    申请号:US904942

    申请日:1986-09-08

    摘要: In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.

    摘要翻译: 在通过用电子束扫描材料区域从非单晶半导体材料形成单晶半导体层的装置中,第一对偏转电极和第二对偏转电极设置在 电子束的路径。 通过用频率低于高频基波信号的调制波信号改变高频基波信号的振幅而产生的偏转信号被提供给第一对的偏转电极。 电极在第一方向上快速偏转电子束,同时改变偏转光束的范围,从而在样品上形成束斑的轨迹。 同时,第二对的偏转电极在第二方向上偏转光束,从而退火材料的区域,以形成单晶半导体层。

    Device for scanning a beam of charged particles
    5.
    发明授权
    Device for scanning a beam of charged particles 失效
    用于扫描带电粒子束的装置

    公开(公告)号:US4396841A

    公开(公告)日:1983-08-02

    申请号:US276375

    申请日:1981-06-16

    IPC分类号: H01J3/28 H01J33/00 H01J3/26

    CPC分类号: H01J3/28 H01J33/00

    摘要: A device for scanning a beam of charged particles comprises longitudinal and cross-sectional scanning electromagnets (1,4) to deflect the beam, respectively, lengthwise and crosswise over the exit window (2), longitudinal and cross-sectional scanning current generators (5, 6) to energize the respective electromagnets (1, 4), and a variable delayer (7) connected between the longitudinal scanning current generator (5) and the synchronizing input of the cross-sectional scanning current generator (6) so that pulses arrive at the input of the variable delayer (7) at the moments when current in the windings of the electromagnet (1) reaches its peak. The variable delayer (7) provides N delay times different from each other by a value of .DELTA. t and set in succession as the pulses arrive at its input, the values N and .DELTA. t being determined from the following relationships:.DELTA.t.ltoreq.d/2f.sub.1 L; N.gtoreq.1/f.sub.2 .DELTA.twhered--diameter of the charged particle beam,f.sub.1 --frequency of the longitudinal scanning,f.sub.2 --frequency of the cross-sectional scanning,L--value of maximum deflection of the beam along the length of the exit window.

    摘要翻译: PCT No.PCT / SU79 / 00098 Sec。 371日期1981年6月16日第 102(e)日期1981年6月16日PCT提交1979年10月18日PCT公布。 出版物WO81 / 0122800 用于扫描带电粒子束的装置包括纵向和横截面的扫描电磁体(1,4),以分别沿出射窗(2)纵向和横向偏转光束,纵向和横向 用于对各个电磁体(1,4)进行通电的分段扫描电流发生器(5,6)和连接在纵向扫描电流发生器(5)和横截面扫描电流发生器的同步输入端之间的可变延迟器(7) (6),使得脉冲在电磁体(1)的绕组中的电流达到其峰值的时刻到达可变延迟器(7)的输入端。 可变延迟器(7)通过DELTA t的值提供不同的N个延迟时间,并且随着脉冲到达其输入端而连续设置,根据以下关系确定值N和DELTA t:DELTA t < d / 2f1L; N> / = 1 / f2 DELTA t其中带电粒子束的d直径,纵向扫描的f1频率,横截面扫描的f2频率,沿着长度的波长的最大偏转的L值 出口窗口。

    Scan corrected vidicon camera apparatus
    6.
    发明授权
    Scan corrected vidicon camera apparatus 失效
    扫描校正摄影机相机

    公开(公告)号:US4390816A

    公开(公告)日:1983-06-28

    申请号:US200226

    申请日:1980-10-23

    CPC分类号: H01J31/38 H01J3/28 H04N3/2335

    摘要: A scan corrected vidicon camera apparatus utilizing a spatial reference filter with an array of slits that is fitted directly on the faceplate of a vidicon tube. The spatial reference filter is used in conjunction with perturbations that are injected into the vertical and horizontal sweeps. The resultant video waveform is correlated in a microprocessor unit to linearize the respective sweeps.

    摘要翻译: 一种扫描校正的摄像机摄像装置,利用具有直接安装在摄像管的面板上的狭缝阵列的空间参考滤光片。 空间参考滤波器与注入垂直和水平扫描的扰动结合使用。 所得到的视频波形在微处理器单元中相关,以使各扫描线性化。

    Focused Ion Beam Device and Focused Ion Beam Processing Method
    7.
    发明申请
    Focused Ion Beam Device and Focused Ion Beam Processing Method 失效
    聚焦离子束装置和聚焦离子束加工方法

    公开(公告)号:US20120235055A1

    公开(公告)日:2012-09-20

    申请号:US13513256

    申请日:2010-11-15

    IPC分类号: H01J3/28

    摘要: Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.

    摘要翻译: 公开了一种光学系统的操作,其实现了与样品台机械倾斜的情况相当的聚焦离子束处理的观察。 在聚焦离子束光学系统中,控制孔径,倾斜偏转器,光束扫描器和物镜,以照射倾斜到光学系统的光轴的离子束,由此实现薄膜处理和交叉 部分处理,而不需要对样品台进行调整和操作。 利用聚焦离子束的薄膜处理和横截面加工可以自动化,并且可以提高收率。 例如,通过将本发明应用于截面监视器来检测终点,可以容易地自动化横截面处理。

    Light beam scanning apparatus with adjustable scanning speed and offset
    9.
    发明授权
    Light beam scanning apparatus with adjustable scanning speed and offset 失效
    具有可调扫描速度和偏移量的光束扫描装置

    公开(公告)号:US4638156A

    公开(公告)日:1987-01-20

    申请号:US873300

    申请日:1986-06-09

    摘要: A light beam scanning apparatus includes a sweeping unit for sweeping a light beam in response to a first signal. A photodetector has a plurality of optical gratings arranged in an array in a predetermined direction in which the light beam is swept. The photodetector generates a second signal in response to a movement of the light beam along the grating array. A control circuit generates the first signal in response to the second signal. The control circuit detects a scan speed of the light beam based on the second signal, and adjusts the first signal in response to the detected scan speed to control the scan speed of the light beam such that the detected scan speed substantially coincides with a predetermined speed.

    摘要翻译: 光束扫描装置包括用于响应于第一信号扫掠光束的扫掠单元。 光电检测器具有沿预定方向排列成阵列的多个光栅,光束被扫描。 光电检测器响应于光束沿着光栅阵列的移动而产生第二信号。 控制电路响应于第二信号产生第一信号。 控制电路基于第二信号检测光束的扫描速度,并且响应于检测到的扫描速度来调整第一信号,以控制光束的扫描速度,使得检测到的扫描速度基本上与预定速度一致 。

    Beam scanning method and apparatus for ion implantation
    10.
    发明授权
    Beam scanning method and apparatus for ion implantation 失效
    光束扫描方法和离子注入装置

    公开(公告)号:US4421988A

    公开(公告)日:1983-12-20

    申请号:US349742

    申请日:1982-02-18

    CPC分类号: H01J37/3171 H01J37/302

    摘要: Method of and apparatus for scanning a charged particle beam over a semiconductor wafer in a prescribed pattern. A triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down.

    摘要翻译: 用于以规定图案在半导体晶片上扫描带电粒子束的方法和装置。 包括具有恒定斜率和可控持续时间的交替的正和负斜坡部分的三角波形被施加到水平偏转系统,并产生横梁的水平扫描。 斜坡部分的持续时间确定水平扫描线的长度,并根据预定的顺序进行控制,以便提供规定的图案。 三角波形由积分器提供,该积分器从可控频率的频率源接收方波。 预定序列存储在控制频率源的频率的只读存储器中。 在每个斜坡部分完成时,施加到垂直偏转系统的电压递增,以使波束垂直上升或下降。