公开(公告)号：US20100215460A1

公开(公告)日：2010-08-26

申请号：US12750955

申请日：2010-03-31

申请人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

发明人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67207 ,  Y10S414/137

摘要： A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

摘要翻译： 提供了一种结构，其中用于从外部携带未加工的晶片并将经处理的晶片运送到外部的负载锁定室（51），要连接到负载锁定室的第一端部输送室（54a），至少一个 中间传送室（54b），彼此相邻设置并且能够独立处理的多组一对处理模块（52a，52b）和设置在相对的端部的第二端部传送室（54c） 负载锁定室的一侧串联连接。 每组处理模块（52a，52b，52c和52d）在第一端部输送室和中间输送室之间，中间输送室之间以及中间输送室和第二端部输送室之间一个接一个地布置， 分别。

公开(公告)号：US20070194001A1

公开(公告)日：2007-08-23

申请号：US11660042

申请日：2005-10-18

申请人： Masami Shibagaki ,  Yasumi Kurematsu

发明人： Masami Shibagaki ,  Yasumi Kurematsu

IPC分类号： F27B5/14

CPC分类号： H01L21/3247 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68757

摘要： [PROBLEMS] To provide a substrate heat treatment apparatus that can suppress generation of the surface roughening of a substrate to which heat treatment is performed. [MEANS FOR SOLVING PROBLEMS] The substrate heat treatment apparatus is provided with a heating means for performing heat treatment to a substrate arranged in a treatment chamber which can be evacuated, and the apparatus performs heat treatment to the substrate arranged in the treatment chamber by the heating means. A susceptor is arranged between the heating means and the substrate, and susceptor surface on a side whereupon the substrate is arranged is covered with a member which does not degas while the substrate heat treatment is performed. A heat receiving body for receiving heat from the heating means through the susceptor is arranged on a side which faces the susceptor by having the substrate in between, and a surface of the heat receiving body on the side whereupon the substrate is arranged is covered with a member which does not degas while the substrate heat treatment is performed.

摘要翻译： 本发明提供能够抑制进行热处理的基板的表面粗糙化的基板热处理装置。 解决问题的手段基板热处理装置具有加热装置，对布置在能够被抽真空的处理室中的基板进行热处理，并且该装置对布置在处理室中的基板进行热处理 加热方式。 在加热装置和基板之间设置感受体，并且在基板被布置的一侧的基座表面被基板热处理时不会脱气的部件覆盖。 用于通过基座从加热装置接收热量的受热体通过使基板位于两个面之间而布置在与基座相对的一侧上，并且基板布置的一侧的热接收体的表面被覆盖有 在进行基板热处理时不脱气的部件。

公开(公告)号：US07780440B2

公开(公告)日：2010-08-24

申请号：US11665446

申请日：2005-10-18

申请人： Masami Shibagaki ,  Yasumi Kurematsu

发明人： Masami Shibagaki ,  Yasumi Kurematsu

IPC分类号： F27D5/00

CPC分类号： H01L21/67103 ,  H01L21/67346 ,  H01L21/6831 ,  H01L21/68714 ,  H01L21/68735

摘要： To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed. The substrate supporting/transferring tray, which has the disc-shaped substrate supporting part on an upper plane side, and is provided with a cylindrical side wall part extending from a periphery of the disc-shaped substrate supporting part to a lower side, and an annular part extending from a lower end side of the cylindrical side wall part to an outer side in a diameter direction.

摘要翻译： 为了提供一种基板支撑/传送托盘，其可以放置在布置在其中进行热处理的处理室中的基板支撑部分上，特别是在具有内置加热装置的基板支撑部分上， 衬底，并且在其上侧放置衬底。 在对基板进行热处理时，基板可以被更均匀地加热，并且当热处理完成时，可以容易地将托盘从基板支撑部件移除，而不需要等待基板的温度降低， 可以将基板从进行热处理的处理室转移到其它部件。 在上平面侧具有圆盘状基板支撑部的基板支承·传送托盘，具有从盘状基板支承部的周边延伸到下侧的圆筒状侧壁部， 环形部分从圆柱形侧壁部分的下端侧延伸到直径方向的外侧。

公开(公告)号：US20100189532A1

公开(公告)日：2010-07-29

申请号：US12720372

申请日：2010-03-09

申请人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

发明人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

IPC分类号： H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67742

摘要： A structure is provided in which a load lock chamber (51) for carrying in and out a wafer, a first conveyance module (53a) having a first conveyance mechanism (54a), a first process module (52a), a second conveyance module (53b) having a second conveyance mechanism (54b), and a second process module (52b) are sequentially connected in series. A wafer (55) is conveyed between the load lock chamber and the first process module by the first conveyance mechanism and conveyed between the first process module and the second process module by the second conveyance mechanism.

摘要翻译： 提供一种结构，其中用于携带和离开晶片的装载锁定室（51），具有第一输送机构（54a）的第一输送模块（53a），第一处理模块（52a），第二输送模块 53b）和第二处理模块（52b）串联连接。 晶片（55）通过第一传送机构在装载锁定室和第一处理模块之间传送，并通过第二传送机构在第一处理模块和第二处理模块之间传送。

公开(公告)号：US20100084392A1

公开(公告)日：2010-04-08

申请号：US12632161

申请日：2009-12-07

申请人： Masami SHIBAGAKI ,  Yasumi Kurematsu

发明人： Masami SHIBAGAKI ,  Yasumi Kurematsu

IPC分类号： F27D11/00 ,  B23Q3/00

CPC分类号： H01L21/67103 ,  H01L21/67346 ,  H01L21/6831 ,  H01L21/68714 ,  H01L21/68735

摘要： To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed. The substrate supporting/transferring tray, which has the disc-shaped substrate supporting part on an upper plane side, and is provided with a cylindrical side wall part extending from a periphery of the disc-shaped substrate supporting part to a lower side, and an annular part extending from a lower end side of the cylindrical side wall part to an outer side in a diameter direction.

摘要翻译： 为了提供一种基板支撑/传送托盘，其可以放置在布置在其中进行热处理的处理室中的基板支撑部分上，特别是在具有内置加热装置的基板支撑部分上， 衬底，并且在其上侧放置衬底。 在对基板进行热处理时，基板可以被更均匀地加热，并且当热处理完成时，可以容易地将托盘从基板支撑部件移除，而不需要等待基板的温度降低， 可以将基板从进行热处理的处理室转移到其它部件。 在上平面侧具有圆盘状基板支撑部的基板支承·传送托盘，具有从盘状基板支承部的周边延伸到下侧的圆筒状侧壁部， 环形部分从圆柱形侧壁部分的下端侧延伸到直径方向的外侧。

公开(公告)号：US08016537B2

公开(公告)日：2011-09-13

申请号：US12750955

申请日：2010-03-31

申请人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

发明人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67207 ,  Y10S414/137

摘要： A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

摘要翻译： 提供了一种结构，其中用于从外部携带未加工的晶片并将经处理的晶片运送到外部的负载锁定室（51），要连接到负载锁定室的第一端部输送室（54a），至少一个 中间传送室（54b），彼此相邻设置并且能够独立处理的多组一对处理模块（52a，52b）和设置在相对的端部的第二端部传送室（54c） 负载锁定室的一侧串联连接。 每组处理模块（52a，52b，52c和52d）在第一端部输送室和中间输送室之间，中间输送室之间以及中间输送室和第二端部输送室之间一个接一个地布置， 分别。

公开(公告)号：US07732739B2

公开(公告)日：2010-06-08

申请号：US11660042

申请日：2005-10-18

申请人： Masami Shibagaki ,  Yasumi Kurematsu

发明人： Masami Shibagaki ,  Yasumi Kurematsu

IPC分类号： F27B5/14 ,  F26B19/00

CPC分类号： H01L21/3247 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68757

摘要： A degassing from a susceptor heated at a high temperature in a vacuum atmosphere is suppressed. The susceptor is disposed between a heater and a substrate and partitions a space in the chamber into a first chamber space where the heater is placed and a second chambers space where the substrate is placed, and the surface of the susceptor facing the second chamber space is coated with a pyrolytic carbon layer (15) of thickness of 10 μm to 50 μm.

摘要翻译： 在真空气氛中从高温加热的基座脱气。 基座设置在加热器和基板之间，并且将腔室中的空间分隔成放置加热器的第一腔室空间和放置基板的第二腔室空间，并且基座面向第二腔室空间的表面是 涂覆有厚度为10μm至50μm的热解碳层（15）。

公开(公告)号：US20080128969A1

公开(公告)日：2008-06-05

申请号：US11665446

申请日：2005-10-18

申请人： Masami Shibagaki ,  Yasumi Kurematsu

发明人： Masami Shibagaki ,  Yasumi Kurematsu

IPC分类号： H01L21/673 ,  H01L21/683 ,  B23Q3/00

CPC分类号： H01L21/67103 ,  H01L21/67346 ,  H01L21/6831 ,  H01L21/68714 ,  H01L21/68735

摘要： [PROBLEMS] To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed. [MEANS FOR SOLVING PROBLEMS] The substrate supporting/transferring tray, which has the disc-shaped substrate supporting part on an upper plane side, and is provided with a cylindrical side wall part extending from a periphery of the disc-shaped substrate supporting part to a lower side, and an annular part extending from a lower end side of the cylindrical side wall part to an outer side in a diameter direction.

摘要翻译： 本发明提供一种基板支撑/转移托盘，其可以放置在布置在其中进行热处理的处理室中的基板支撑部分上，特别是在具有内置加热装置的基板支撑部分上 用于加热衬底，并且在其上侧放置衬底。 在对基板进行热处理时，基板可以被更均匀地加热，并且当热处理完成时，可以容易地将托盘从基板支撑部件移除，而不需要等待基板的温度降低， 可以将基板从进行热处理的处理室转移到其它部件。 用于解决问题的手段基板支撑/传送托盘，其具有在上平面侧上的盘形基板支撑部分，并且设置有从盘形基板支撑部分的周边延伸到的圆柱形侧壁部分 下侧，以及从筒状侧壁部的下端侧向直径方向的外侧延伸的环状部。

公开(公告)号：US08147242B2

公开(公告)日：2012-04-03

申请号：US12632161

申请日：2009-12-07

申请人： Masami Shibagaki ,  Yasumi Kurematsu

发明人： Masami Shibagaki ,  Yasumi Kurematsu

IPC分类号： F27D5/00

CPC分类号： H01L21/67103 ,  H01L21/67346 ,  H01L21/6831 ,  H01L21/68714 ,  H01L21/68735

摘要： To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed. The substrate supporting/transferring tray, which has the disc-shaped substrate supporting part on an upper plane side, and is provided with a cylindrical side wall part extending from a periphery of the disc-shaped substrate supporting part to a lower side, and an annular part extending from a lower end side of the cylindrical side wall part to an outer side in a diameter direction.

摘要翻译： 为了提供一种基板支撑/传送托盘，其可以放置在布置在其中进行热处理的处理室中的基板支撑部分上，特别是在具有内置加热装置的基板支撑部分上， 衬底，并且在其上侧放置衬底。 在对基板进行热处理时，基板可以被更均匀地加热，并且当热处理完成时，可以容易地将托盘从基板支撑部件移除，而不需要等待基板的温度降低， 可以将基板从进行热处理的处理室转移到其它部件。 在上平面侧具有圆盘状基板支撑部的基板支承·传送托盘，具有从盘状基板支承部的周边延伸到下侧的圆筒状侧壁部， 环形部分从圆柱形侧壁部分的下端侧延伸到直径方向的外侧。

公开(公告)号：US08092139B2

公开(公告)日：2012-01-10

申请号：US12728588

申请日：2010-03-22

申请人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

发明人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

IPC分类号： H01L21/677

CPC分类号： H01L21/67742 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/67748 ,  Y10S414/139

摘要： There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).

摘要翻译： 包括用于从外部承载晶片的负载室（51），用于将晶片运送到外部的卸载室（53）和多个输送室（54a，54b，54c）和多个处理模块 （52a，52b）串联连接在负载室和卸载室之间。 传送室和处理模块交替连接，多个传送室包括连接到装载室的第一端部传送室（54a），连接到卸载室的第二端部传送室（54c），以及另一个或 多个中间输送室（54b）。