公开(公告)号：US09880472B2

公开(公告)日：2018-01-30

申请号：US15011804

申请日：2016-02-01

Applicant: FUJIFILM Corporation

Inventor： Ryosuke Ueba ,  Keita Kato

IPC: G03F7/40 ,  G03F7/20 ,  H01L21/027 ,  G03F7/00 ,  G03F7/32 ,  G03F7/36 ,  G03F7/039 ,  G03F7/11

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0273

Abstract: There is provided a pattern formation method comprising: a step (i) for forming a first negative type pattern by performing the specific steps on a substrate; a step (iii) for forming a lower layer by embedding the specific resin composition (2) which contains a second resin in a region of the substrate in which no film part with the first negative type pattern is formed; a step (iv) for forming an upper layer on the lower layer using the specific actinic ray-sensitive or radiation-sensitive resin composition (3); a step (v) for exposing the upper layer to light; a step (vi) for developing the upper layer using a developer which includes an organic solvent and forming a second negative type pattern on the lower layer; and a step (vii) for removing a portion of the lower layer, in the stated order.

公开(公告)号：US09841679B2

公开(公告)日：2017-12-12

申请号：US15158848

申请日：2016-05-19

Applicant: FUJIFILM Corporation

Inventor： Masafumi Kojima ,  Akiyoshi Goto ,  Akinori Shibuya ,  Keita Kato ,  Kei Yamamoto

IPC: G03F7/004 ,  G03F7/38 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation.

公开(公告)号：US09523913B2

公开(公告)日：2016-12-20

申请号：US14093781

申请日：2013-12-02

Applicant: FUJIFILM Corporation

Inventor： Keita Kato ,  Michihiro Shirakawa ,  Hidenori Takahashi ,  Shoichi Saitoh ,  Fumihiro Yoshino

IPC: G03F7/004 ,  G03F7/30 ,  G03F7/038 ,  G03F7/039 ,  C08F220/12 ,  G03F7/32

CPC classification number: G03F7/0382 ,  C08F220/12 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/325

Abstract: A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.

Abstract translation: 图案形成方法包括：（i）通过使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，所述树脂组合物包含：（A）含有具有能够通过酸的作用分解的基团的重复单元的树脂 以产生极性基团，（B）在用光化射线或辐射照射时能够产生酸的化合物，和（C）溶剂，（ii）暴露薄膜的步骤，和（iii）显影步骤 通过使用含有机溶剂的显影剂形成负图案的曝光膜，其中由下式（I）表示的重复单元的含量相对于树脂（A）中的所有重复单元和 树脂（A）含有除具有上述特定结构式的重复单元以外的非酚性芳香族基团的重复单元。

公开(公告)号：US09513547B2

公开(公告)日：2016-12-06

申请号：US14607146

申请日：2015-01-28

Applicant: FUJIFILM Corporation

Inventor： Sou Kamimura ,  Hidenori Takahashi ,  Keita Kato

IPC: G03F7/039 ,  G03F7/40 ,  G03F7/30 ,  G03F7/038 ,  C08F212/14 ,  C08F220/04 ,  C08F220/18 ,  C08F220/26 ,  C08F220/28 ,  C08F220/58 ,  G03F7/32 ,  G03F7/20 ,  C08F212/32

CPC classification number: G03F7/0388 ,  C08F212/14 ,  C08F212/32 ,  C08F220/04 ,  C08F220/18 ,  C08F220/26 ,  C08F220/28 ,  C08F220/58 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/30 ,  G03F7/325 ,  G03F7/40

Abstract: The pattern forming method of the present invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin (A) which has a repeating unit including a group capable of generating a polar group by being decomposed due to an action of an acid and a repeating unit including a carboxyl group, a compound (B) which generates an acid according to irradiation with actinic rays or radiation, and a solvent (C); (ii) exposing the film using a KrF excimer laser, extreme ultraviolet rays, or an electron beam; and (iii) forming a negative tone pattern by developing the exposed film using a developer which includes an organic solvent.

Abstract translation: 本发明的图案形成方法包括：（i）使用含有具有包含能够产生极性基团的重复单元的树脂（A）的光化射线敏感性或辐射敏感性树脂组合物形成膜， 由于酸和包含羧基的重复单元的作用，根据光化射线或辐射照射产生酸的化合物（B）和溶剂（C）而分解; （ii）使用KrF准分子激光器，极紫外线或电子束曝光该膜; 和（iii）通过使用包括有机溶剂的显影剂显影曝光的膜形成负色调图案。

公开(公告)号：US09075310B2

公开(公告)日：2015-07-07

申请号：US14261896

申请日：2014-04-25

Applicant: FUJIFILM Corporation

Inventor： Michihiro Shirakawa ,  Keita Kato ,  Tadahiro Odani ,  Atsushi Nakamura ,  Hidenori Takahashi ,  Kaoru Iwato

IPC: G03F7/30 ,  G03F7/095 ,  G03F7/11 ,  H01L21/027 ,  G03F7/039 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/095 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  H01L21/0271

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract translation: 图案形成方法包括：（i）通过使用第一树脂组合物（I）在基材上形成第一膜的步骤，（ii）通过使用第二树脂组合物在第一膜上形成第二膜的步骤 II），（iii）暴露具有第一膜和第二膜的多层膜的步骤，和（iv）在暴露的第一膜和第二膜中显影第一膜和第二膜的步骤 通过使用含有机溶剂的显影剂形成负图案的多层膜。

公开(公告)号：US09040231B2

公开(公告)日：2015-05-26

申请号：US14257314

申请日：2014-04-21

Applicant: FUJIFILM Corporation

Inventor： Keita Kato ,  Michihiro Shirakawa ,  Tadahiro Odani ,  Atsushi Nakamura ,  Hidenori Takahashi ,  Kaoru Iwato

IPC: G03F7/26 ,  G03F7/09 ,  G03F7/095 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32

Abstract: A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

公开(公告)号：US08987118B2

公开(公告)日：2015-03-24

申请号：US14017833

申请日：2013-09-04

Applicant: Samsung Electronics Co., Ltd. ,  Fujifilm Corporation

Inventor： Hyung-Rae Lee ,  Keita Kato ,  Atsushi Nakamura ,  Yool Kang ,  Suk-Koo Hong ,  Jae-Ho Kim ,  Dong-Jun Lee ,  Si-Young Lee

IPC: H01L21/20 ,  H01L29/78 ,  H01L29/66 ,  H01L21/027 ,  H01L21/8238 ,  H01L21/308 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40 ,  H01L29/165

CPC classification number: H01L29/7848 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0274 ,  H01L21/3083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66636

Abstract: A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.

Abstract translation: 公开了制造半导体器件的方法，包括以下步骤：提供形成在衬底的第一和第二区域上的具有第一区域，第二区域和多个栅电极的衬底; 形成掩模膜以在覆盖基板的第二区域的同时露出基板的第一区域，使得掩模膜在基板的第一和第二区域之间的边界处具有负的横向轮廓; 通过使用掩模膜和栅电极作为掩模蚀刻衬底的第一区域，在衬底的第一区域中形成硅沟槽; 以及在每个σ沟槽中形成外延层。

公开(公告)号：US08859192B2

公开(公告)日：2014-10-14

申请号：US13904236

申请日：2013-05-29

Applicant: FUJIFILM Corporation

Inventor： Keita Kato ,  Kana Fujii ,  Sou Kamimura ,  Kaoru Iwato

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/20 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24802

Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

Abstract translation: 负图案形成方法包括：（i）从含有（A）树脂（A）的树脂的树脂（A）的极性增加的树脂的化学放大抗蚀剂组合物形成膜厚度为200nm以上的膜， 降低对含有一种或多种有机溶剂的显影剂的树脂（A）的溶解度的酸，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）使膜曝光，形成曝光膜; 和（iii）用含有一种或多种有机溶剂的显影剂显影曝光的薄膜。

公开(公告)号：US12007688B2

公开(公告)日：2024-06-11

申请号：US16953305

申请日：2020-11-19

Applicant: FUJIFILM Corporation

Inventor： Daisuke Asakawa ,  Akiyoshi Goto ,  Masafumi Kojima ,  Takashi Kawashima ,  Yasufumi Oishi ,  Keita Kato

IPC: G03F7/039 ,  C08F20/18 ,  C08F26/06 ,  G03F7/038

CPC classification number: G03F7/039 ,  C08F20/18 ,  C08F26/06 ,  G03F7/038

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin including a repeating unit represented by Formula (1) and capable of increasing a polarity by an action of an acid.

公开(公告)号：US10859914B2

公开(公告)日：2020-12-08

申请号：US15657295

申请日：2017-07-24

Applicant: FUJIFILM Corporation

Inventor： Naoya Hatakeyama ,  Akiyoshi Goto ,  Michihiro Shirakawa ,  Keita Kato ,  Keiyu Ou

IPC: G03F7/075 ,  G03F7/004 ,  G03F7/38 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  G03F7/16

Abstract: A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.