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公开(公告)号：US20220186358A1
公开(公告)日：2022-06-16
申请号：US17688613
申请日：2022-03-07
Applicant: ENTEGRIS, INC.
Inventor： Oleg Byl , Ying Tang , Joseph R. Despres , Joseph D. Sweeney , Sharad N. Yedave
IPC: C23C14/48 , C23C14/56 , H01J37/08 , H01J37/317
Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.
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公开(公告)号：US10354877B2
公开(公告)日：2019-07-16
申请号：US15928645
申请日：2018-03-22
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Edward A. Sturm , Ying Tang , Sharad N. Yedave , Joseph D. Sweeney , Steven G. Sergi , Barry Lewis Chambers
IPC: H01J37/08 , H01L31/18 , H01L33/00 , H01J37/317 , H01L21/265
Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.
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公开(公告)号：US20190103275A1
公开(公告)日：2019-04-04
申请号：US16149792
申请日：2018-10-02
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Sharad N. Yedave , Joseph D. Sweeney , Barry Lewis Chambers , Ying Tang
IPC: H01L21/265 , H01L31/18 , H01J37/244 , H01J37/08 , H01J37/317
Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.
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公开(公告)号：US09996090B2
公开(公告)日：2018-06-12
申请号：US14891352
申请日：2014-05-15
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Joseph D. Sweeney
CPC classification number: G05D11/133 , F17C2221/03 , F17C2223/035 , F17C2225/035 , F17C2227/04 , F17C2270/0518 , F25J3/0252 , G05D11/134 , G05D11/135 , G05D11/139 , Y02E60/324
Abstract: Methods are described for filling gas mixture supply vessels with constituent gases to achieve precision compositions of the gas mixture, wherein the gas mixture comprises at least two constituent gases. Cascading fill techniques may be employed, involving flowing of gases from single source vessels to multiple target vessels, or from multiple source vessels to a single target vessel. The methods may be employed to form dopant gas mixtures, e.g., of boron trifluoride and hydrogen, for ion implantation applications.
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公开(公告)号：US09831063B2
公开(公告)日：2017-11-28
申请号：US14768758
申请日：2014-03-03
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Joseph D. Sweeney , Ying Tang , Richard S. Ray
IPC: H01J37/00 , H01J37/317 , H01J37/08 , H01L21/22 , C23C14/48
CPC classification number: H01J37/3171 , C23C14/48 , H01J37/08 , H01J2237/006 , H01J2237/08 , H01L21/2225
Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.
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Patent Agency Ranking
公开(公告)号：US20160172164A1
公开(公告)日：2016-06-16
申请号：US14906537
申请日：2014-07-21
Applicant: Entegris, Inc.
Inventor： Joseph D. Sweeney , Edward E. Jones , Oleg Byl , Ying Tang , Joseph R. Despres , Steven E. Bishop
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/3171 , H01J2237/002 , H01J2237/006 , H01J2237/08 , H01J2237/24564 , H01J2237/3365
Abstract: Fluid storage and dispensing systems and methods for remote delivery of fluids are described, for providing fluid from a source vessel at lower voltage to one or more fluid-utilizing tools at higher voltage, so that the fluid crosses the associated voltage gap without arcing, discharge, premature ionization, or other anomalous behavior, and so that when multiple fluid-utilizing tools are supplied by the remote source vessel, fluid is efficiently supplied to each of the multiple tools at suitable pressure level during the independent operation of others of the multiple vessels.
Abstract translation: 描述用于远程输送流体的流体存储和分配系统和方法，用于将来自较低电压的源容器的流体提供给在较高电压下的一个或多个流体利用工具，使得流体跨过相关联的电压间隙而没有电弧，放电 过早电离或其他异常行为，并且当多个流体利用工具由远程源容器供应时，在多个容器的其他人的独立操作期间，以适当的压力水平将流体有效地供给到多个工具中的每一个 。
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公开(公告)号：US20230235856A1
公开(公告)日：2023-07-27
申请号：US18102259
申请日：2023-01-27
Applicant: ENTEGRIS, INC.
Inventor： Oleg Byl , John Robert Morris , Nathan Ballard Jones , Diego Troya
CPC classification number: F17C11/00 , C01B6/10 , C01B32/20 , B01J20/20 , F17C5/00 , C01P2002/78 , F17C2221/01 , F17C2205/0323 , F17C2270/0518
Abstract: Described are systems and methods of storing adsorbing diborane on carbon adsorption medium.
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公开(公告)号：US20230227309A1
公开(公告)日：2023-07-20
申请号：US18094160
申请日：2023-01-06
Applicant: ENTEGRIS, INC.
Inventor： Oleg Byl
CPC classification number: C01B6/06 , B01J20/226 , F17C11/00 , F17C9/00 , F17C2221/01 , F17C2223/031 , F17C2201/058 , F17C2201/0104
Abstract: Described are storage and dispensing systems and related methods for the selective dispensing germane (GeH4) as a reagent gas from a vessel in which the germane is held in sorptive relationship to a solid adsorbent medium that includes zeolitic imidazolate framework.
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公开(公告)号：US20190071313A1
公开(公告)日：2019-03-07
申请号：US15899692
申请日：2018-02-20
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
Abstract: A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B2F4.
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公开(公告)号：US09938156B2
公开(公告)日：2018-04-10
申请号：US14350543
申请日：2012-10-09
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
CPC classification number: C01B35/061 , B01J3/03 , B01J7/00 , B01J15/00 , B01J19/0073 , B01J19/129 , B01J2219/00094 , B01J2219/00148 , B01J2219/0254 , B01J2219/0272 , B01J2219/0277 , B01J2219/0886 , Y02P20/149
Abstract: A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B2F4.
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