公开(公告)号：US20240194161A1

公开(公告)日：2024-06-13

申请号：US17908359

申请日：2021-08-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Guangcai Yuan ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Xin Xie ,  Yifang Huang ,  Liping Lei ,  Chen Xu

IPC: G09G3/36

CPC classification number: G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2310/0286

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.

公开(公告)号：US20240162247A1

公开(公告)日：2024-05-16

申请号：US17772761

申请日：2021-06-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fuqiang Li ,  Zhen Zhang ,  Zhenyu Zhang ,  Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Zheng Fang ,  Jiahui Han ,  Chenyang Zhang ,  Yawei Wang ,  Chengfu Xu

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1288 ,  H01L27/1222

Abstract: Disclosed are a thin film transistor and a manufacturing method therefor, a displaying base plate and a displaying apparatus. The thin film transistor includes an active layer, a first insulating layer and a gate layer which are disposed in stack, wherein the active layer includes a source contact area, a drain contact area, and a channel area connecting the source contact area and the drain contact area; the channel area includes a first channel area, a first resistance area and a second channel area sequentially disposed in a first direction; the gate layer includes a first gate and a second gate which are separately disposed; an orthographic projection of the first gate on a plane where the active layer is located covers the first channel area; and an orthographic projection of the second gate on a plane where the active layer is located covers the second channel area.

公开(公告)号：US20240103328A1

公开(公告)日：2024-03-28

申请号：US17765769

申请日：2021-06-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhen Zhang ,  Fuqiang Li ,  Zhenyu Zhang ,  Yunping Di ,  Lizhong Wang ,  Zheng Fang ,  Jiahui Han ,  Yawei Wang ,  Chenyang Zhang ,  Chengfu Xu ,  Ce Ning ,  Pengxia Liang ,  Feihu Zhou ,  Xianqin Meng ,  Weiting Peng ,  Qiuli Wang ,  Binbin Tong ,  Rui Huang ,  Tianmin Zhou ,  Wei Yang

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/136286 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259

Abstract: A displaying base plate and a manufacturing method thereof, and a displaying device. The displaying base plate includes a substrate, and a first electrode layer disposed on one side of the substrate, wherein the first electrode layer includes a first electrode pattern; a first planarization layer disposed on one side of the first electrode layer that is away from the substrate, wherein the first planarization layer is provided with a through hole, and the through hole penetrates the first planarization layer, to expose the first electrode pattern; and a second electrode layer, a second planarization layer and a third electrode layer that are disposed in stack on one side of the first planarization layer that is away from the substrate, wherein the second electrode layer is disposed closer to the substrate, the second electrode layer is connected to the first electrode pattern and the third electrode layer.

公开(公告)号：US11905163B2

公开(公告)日：2024-02-20

申请号：US16753362

申请日：2019-04-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Xiao Zhang ,  Chao Li

IPC: B81B1/00 ,  B81C1/00 ,  B01L3/00

CPC classification number: B81B1/002 ,  B01L3/502715 ,  B81C1/00071 ,  B01L2300/0645 ,  B81B2201/05 ,  B81B2203/0338 ,  B81C2201/0111 ,  B81C2201/036

Abstract: A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.

公开(公告)号：US10483129B2

公开(公告)日：2019-11-19

申请号：US15717527

申请日：2017-09-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Feng ,  Seung Jin Choi ,  Fangzhen Zhang ,  Wusheng Li ,  Zhijun Lv ,  Ce Ning ,  Jiushi Wang

IPC: H01L21/4763 ,  H01L21/027 ,  H01L29/66 ,  H01L29/786 ,  G03F7/00 ,  H01L27/12 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40 ,  H01L21/321

Abstract: The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.

公开(公告)号：US10204997B2

公开(公告)日：2019-02-12

申请号：US15560724

申请日：2016-09-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Ce Ning

IPC: H01L27/12 ,  H01L29/45 ,  H01L21/02 ,  C23C14/35 ,  H01L21/027 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  G03F5/16 ,  H01L21/443 ,  G02F1/1343 ,  G02F1/13363 ,  H01L21/77

Abstract: The present application discloses a thin film transistor, a display substrate and display panel having the same, and a fabricating method thereof. The thin film transistor includes a base substrate; an active layer on the base substrate having a channel region, a first electrode contact region, and a second electrode contact region; and a first electrode on a side of the first electrode contact region distal to the base substrate; and a second electrode on a side of the second electrode contact region distal to the base substrate; the first electrode and the second electrode being made of an amorphous carbon material.

公开(公告)号：US20180254328A1

公开(公告)日：2018-09-06

申请号：US15560724

申请日：2016-09-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Ce Ning

IPC: H01L29/45 ,  H01L27/12 ,  H01L21/02 ,  H01L21/443 ,  H01L21/027 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  G03F5/16 ,  C23C14/35

CPC classification number: H01L29/45 ,  C23C14/35 ,  G02F1/13363 ,  G02F1/1343 ,  G03F5/16 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/0274 ,  H01L21/443 ,  H01L21/77 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869

Abstract: The present application discloses a thin film transistor, a display substrate and display panel having the same, and a fabricating method thereof. The thin film transistor includes a base substrate; an active layer on the base substrate having a channel region, a first electrode contact region, and a second electrode contact region; and a first electrode on a side of the first electrode contact region distal to the base substrate; and a second electrode on a side of the second electrode contact region distal to the base substrate; the first electrode and the second electrode being made of an amorphous carbon material.

公开(公告)号：US20180226269A1

公开(公告)日：2018-08-09

申请号：US15717527

申请日：2017-09-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Feng ,  Seung Jin Choi ,  Fangzhen Zhang ,  Wusheng Li ,  Zhijun Lv ,  Ce Ning ,  Jiushi Wang

IPC: H01L21/4763 ,  H01L21/027 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40 ,  G03F7/00

CPC classification number: H01L21/47635 ,  G03F7/0035 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/321 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.

公开(公告)号：US09799679B2

公开(公告)日：2017-10-24

申请号：US14769422

申请日：2014-10-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning

IPC: H01L27/12 ,  G02F1/1368 ,  H01L21/77 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134318 ,  G02F2001/136295 ,  G02F2201/121 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869

Abstract: The present disclosure provides a thin film transistor (TFT) array substrate, its manufacturing method and a display device. The method includes steps of: forming patterns of a common electrode, a common electrode line, a gate line and a data line on a substrate by a single patterning process; forming an insulating layer; forming a pattern of an active layer by a single patterning process; forming a gate insulating layer and forming via-holes corresponding to the gate line, the data line and the active layer in the gate insulating layer by a single patterning process; and forming patterns of a pixel electrode, a gate electrode, a source electrode and a drain electrode by a single patterning process.

公开(公告)号：US09754979B2

公开(公告)日：2017-09-05

申请号：US13703483

申请日：2012-09-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xuehui Zhang ,  Jing Yang

IPC: H01L29/18 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/326

Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.