POLY-SILICON TFT, POLY-SILICON ARRAY SUBSTRATE AND PREPARING METHOD THEREOF, DISPLAY DEVICE
    26.
    发明申请
    POLY-SILICON TFT, POLY-SILICON ARRAY SUBSTRATE AND PREPARING METHOD THEREOF, DISPLAY DEVICE 有权
    聚硅薄膜,聚硅基底座及其制备方法,显示装置

    公开(公告)号:US20140077216A1

    公开(公告)日:2014-03-20

    申请号:US13985336

    申请日:2012-11-16

    Inventor: Fangzhen Zhang

    CPC classification number: H01L27/127 H01L27/1222 H01L29/66757 H01L29/78618

    Abstract: Provided are a poly-silicon thin film transistor (TFT), a poly-silicon array substrate and a preparing method thereof, and a display device for solving the problems of excessive mask plates, complicated process and high costs in a conventional technology. The method of preparing the poly-silicon TFT comprising a doped region comprises steps: forming a poly-silicon layer on a substrate, forming an active layer by a patterning process; forming a first insulating layer; forming, by a patterning process, via holes exposing the active layer, the source electrode and the drain electrode being connected through the via holes to the active layer; doping the active layer through the via holes by a doping process to form a doped region; forming a source-drain metal layer, and forming the source electrode and the drain electrode by a patterning process.

    Abstract translation: 提供了一种多晶硅薄膜晶体管(TFT),多晶硅阵列基板及其制备方法,以及用于解决过去的掩模板的问题,复杂的工艺和高成本的显示装置。 制备包括掺杂区域的多晶硅TFT的方法包括以下步骤:在衬底上形成多晶硅层,通过图案化工艺形成有源层; 形成第一绝缘层; 通过图案化工艺形成通过所述有源层,所述源极电极和所述漏极电极通过所述通孔连接到所述有源层的通孔; 通过掺杂工艺通过通孔掺杂有源层以形成掺杂区域; 形成源极 - 漏极金属层,并通过图案化工艺形成源电极和漏电极。

    Method for fabricating displaying base plate, displaying base plate and displaying device

    公开(公告)号:US11973166B2

    公开(公告)日:2024-04-30

    申请号:US17340672

    申请日:2021-06-07

    Abstract: A displaying base plate and a fabricating method thereof. The displaying base plate includes a substrate, and a first flat layer on one side of the substrate; a first metal layer on one side of the first flat layer that is further away from the substrate; a second flat layer on sides of the first metal layer and the first flat layer that are further away from the substrate; and a second metal layer on one side of the second flat layer that is further away from the substrate; wherein the first metal layer includes a first metal trace, an orthographic projection of the second metal layer on the substrate and an orthographic projection of the first metal trace on the substrate have an overlapping part, and an orthographic projection of the second flat layer on the substrate covers the orthographic projection of the first metal trace on the substrate.

    Touch panel, manufacturing method thereof, and display device

    公开(公告)号:US10241628B2

    公开(公告)日:2019-03-26

    申请号:US14770151

    申请日:2014-12-01

    Abstract: A touch panel, a manufacturing method thereof and a display device are provided. The touch panel includes a first touch electrode, a second touch electrode and a one-piece insulating element. The second touch electrode includes an electrode section disposed in a same layer as the first touch electrode and a connecting section under the electrode section. The electrode section includes a first electrode section and a second electrode section, which are electrically connected by the connecting section, and the connecting section is spaced apart from the first touch electrode. The insulating element includes a first insulating section between the connecting section and the first touch electrode and a second insulating section between the first electrode section and the first touch electrode and also between the second electrode section and the first touch electrode. The insulating sections can be obtained by performing a patterning process, so that the manufacturing method of the touch panel is simplified.

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