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公开(公告)号：US10191391B2
公开(公告)日：2019-01-29
申请号：US15279860
申请日：2016-09-29
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Gerbrand Van Der Zouw
Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
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公开(公告)号：US20180348645A1
公开(公告)日：2018-12-06
申请号：US15988677
申请日：2018-05-24
Applicant: ASML Netherlands B.V.
Inventor： Janneke Ravensbergen , Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Sebastianus Adrianus Goorden , Bastiaan Onne Fagginger Auer , Simon Gijsbert Josephus Mathijssen
CPC classification number: G03F7/7055 , G01B11/272 , G01N21/4788 , G01N21/9501 , G01N21/95623 , G03F7/70625 , G03F7/70633
Abstract: A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.
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公开(公告)号：US12276921B2
公开(公告)日：2025-04-15
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor Zwier , Maurits Van Der Schaar , Hilko Dirk Bos , Hans Van Der Laan , S. M. Masudur Rahman Al Arif , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert Koolen , Victor Emanuel Calado , Kaustuve Bhattacharyya , Jin Lian , Sebastianus Adrianus Goorden , Hui Quan Lim
IPC: G03F7/00
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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24.发明授权公开(公告)号：US12007700B2
公开(公告)日：2024-06-11
申请号：US17856213
申请日：2022-07-01
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
CPC classification number: G03F7/7085 , G01B11/02 , G01B11/0625 , G01N21/4788 , G01N21/9501 , G03F7/70158 , G03F7/705 , G03F7/70625 , G03F7/70633 , G03F9/7088 , G01B2210/56
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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25.发明授权公开(公告)号：US11415900B2
公开(公告)日：2022-08-16
申请号：US17022910
申请日：2020-09-16
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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Patent Agency Ranking
公开(公告)号：US10895812B2
公开(公告)日：2021-01-19
申请号：US15833130
申请日：2017-12-06
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Armand Eugene Albert Koolen
Abstract: Metrology apparatus and methods for measuring a structure formed on a substrate by a lithographic process are disclosed. In one arrangement an optical system illuminates the structure with radiation and detects radiation scattered by the structure. The optical system comprises a first dispersive element. The first dispersive element spectrally disperses scattered radiation exclusively from a first portion of a pupil plane field distribution along a first dispersion direction. A second dispersive element, separated from the first dispersive element, spectrally disperses scattered radiation exclusively from a second portion of the pupil plane field distribution, different from the first portion of the pupil plane field distribution, along a second dispersion direction.
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公开(公告)号：US10598483B2
公开(公告)日：2020-03-24
申请号：US15683010
申请日：2017-08-22
Applicant: ASML Netherlands B.V.
Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.
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公开(公告)号：US10317805B2
公开(公告)日：2019-06-11
申请号：US15842958
申请日：2017-12-15
Applicant: ASML Netherlands B.V.
Inventor： Jolanda Theodora Josephina Schmetz-Schagen , Hugo Augustinus Joseph Cramer , Armand Eugene Albert Koolen , Bastiaan Onne Fagginger Auer
IPC: G03F9/00 , G03F7/20 , G01N21/956 , G01B11/02 , G01M11/02
Abstract: A method for monitoring a characteristic of illumination from a metrology apparatus includes using the metrology apparatus to acquire a pupil image at different focus settings of the metrology apparatus and calculating an asymmetry value for each acquired pupil image, where each pupil image is acquired on at least one edge of a target of a substrate.
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公开(公告)号：US20190146356A1
公开(公告)日：2019-05-16
申请号：US16223372
申请日：2018-12-18
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Gerbrand Van Der Zouw
CPC classification number: G03F7/70625 , G01B11/272 , G01N21/47 , G03F7/7015 , G03F7/706 , G03F7/70633
Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
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30.发明授权Metrology method and apparatus, substrate, lithographic system and device manufacturing method 有权计量方法和设备，基板，光刻系统和器件制造方法公开(公告)号：US09535338B2
公开(公告)日：2017-01-03
申请号：US14403010
申请日：2013-05-01
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70625 , G03F7/70483 , G03F7/70633 , G03F7/70683
Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
Abstract translation: 由基板上的光刻工艺形成的测量目标包括多个分量光栅。 使用由分量光栅衍射的+1和-1次辐射来形成目标的图像。 识别检测到的图像中的感兴趣区域（ROI）对应于分量光栅。 在每个ROI内的强度值被处理并在图像之间进行比较，以获得不对称性的测量并因此获得覆盖误差。 在分量光栅之间形成分离区并设计成在图像中提供暗区。 在一个实施例中，选择其边界落入对应于分离区域的图像区域内的ROI。 通过这种措施，使不对称测量更加容忍ROI的位置的变化。 黑暗的地区也有助于识别图像中的目标。
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