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公开(公告)号：US10678145B2
公开(公告)日：2020-06-09
申请号：US15941324
申请日：2018-03-30
Applicant: ASML Netherlands B.V.
Inventor： Alessandro Polo , Nitesh Pandey , Armand Eugene Albert Koolen
Abstract: A radiation receiving system for an inspection apparatus, used to perform measurements on target structures on lithographic substrates as part of a lithographic process, comprises a spectrometer with a number of inputs. The radiation receiving system comprises: a plurality of inputs, each input being arranged to provide radiation from a target structure; a first optical element operable to receive radiation from each of the plurality of inputs; a second optical element operable to receive radiation from the first optical element and to scatter the radiation; and a third optical element operable to direct the scattered radiation onto a detector. The second optical element may for example be a reflective diffraction grating that diffracts incoming radiation into an output radiation spectrum.
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公开(公告)号：US10788757B2
公开(公告)日：2020-09-29
申请号：US16379267
申请日：2019-04-09
Applicant: ASML Netherlands B.V.
Inventor： Su-Ting Cheng , Sergei Sokolov , Armand Eugene Albert Koolen
Abstract: Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.
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公开(公告)号：US10599047B2
公开(公告)日：2020-03-24
申请号：US15988677
申请日：2018-05-24
Applicant: ASML Netherlands B.V.
Inventor： Janneke Ravensbergen , Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Sebastianus Adrianus Goorden , Bastiaan Onne Fagginger Auer , Simon Gijsbert Josephus Mathijssen
IPC: G03F7/20 , G01N21/95 , G01N21/956 , G01N21/47 , G01B11/27
Abstract: A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.
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公开(公告)号：US10551308B2
公开(公告)日：2020-02-04
申请号：US15378962
申请日：2016-12-14
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan Jak , Armand Eugene Albert Koolen , Gerbrand Van Der Zouw , Dirk Karel Margaretha Broddin
IPC: G01N21/00 , G01N21/956 , G01N21/47 , G01N21/95 , G03F7/20
Abstract: An inspection apparatus includes an optical system, which has a radiation beam delivery system for delivering radiation to a target, and a radiation beam collection system for collecting radiation after scattering from the target. Both the delivery system and the collection system comprise optical components that control the characteristics of the radiation and the collected radiation. By controlling the characteristics of one or both of the radiation and collected radiation, the depth of focus of the optical system may be increased.
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公开(公告)号：US10423077B2
公开(公告)日：2019-09-24
申请号：US16223372
申请日：2018-12-18
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Gerbrand Van Der Zouw
Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20190107781A1
公开(公告)日：2019-04-11
申请号：US16150879
申请日：2018-10-03
Applicant: Stichting VU , Stichting Nederlandse Wetenschappelijk Onderzoek Instituten , Universiteit van Amsterdam , ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US09158194B2
公开(公告)日：2015-10-13
申请号：US13628697
申请日：2012-09-27
Applicant: ASML Netherlands B.V.
Inventor： Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Peter Clement Paul Vanoppen , Michael Kubis
IPC: G01B11/00 , G01B11/14 , G03B27/32 , G03B27/54 , G03B27/72 , G03B27/74 , G03C5/00 , G03F1/42 , G03F7/20 , G03F9/00 , G01N21/47 , G01B9/04
CPC classification number: G03F1/42 , G01B9/04 , G01N21/47 , G03F7/70616 , G03F7/70633 , G03F9/70 , G03F9/7069 , G03F9/7088
Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.
Abstract translation: 一种方法用于估计和校正覆盖变化作为每个测量的偏移函数。 形成在衬底上的靶包括周期性光栅。 在衬底上用圆形点照射衬底，其尺寸大于每个光栅。 在暗场散射仪中检测由每个光栅散射的辐射，以获得测量信号。 测量信号用于计算叠加。 确定覆盖层与照明点中位置的函数关系（斜率）。 可以计算在诸如照明点中心的标称位置处的覆盖物的估计值，以根据目标在照明点中的位置的函数来校正覆盖物的变化。 这补偿了晶片台移动中的位置误差的影响，以及目标在照明点中产生的非居中位置。
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公开(公告)号：US11099489B2
公开(公告)日：2021-08-24
申请号：US16712862
申请日：2019-12-12
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Hilko Dirk Bos , Erik Johan Koop , Armand Eugene Albert Koolen , Han-Kwang Nienhuys , Alessandro Polo , Jin Lian , Arie Jeffrey Den Boef
IPC: G03F7/20 , G01N21/47 , G01N21/956 , G01N21/95
Abstract: The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.
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9.发明授权公开(公告)号：US10983445B2
公开(公告)日：2021-04-20
申请号：US16268564
申请日：2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Zili Zhou , Gerbrand Van Der Zouw , Arie Jeffrey Den Boef , Markus Gerardus Martinus Maria Van Kraaij , Armand Eugene Albert Koolen , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen , Martinus Hubertus Maria Van Weert , Anagnostis Tsiatmas , Shu-jin Wang , Bastiaan Onne Fagginger Auer , Alok Verma
Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
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公开(公告)号：US20190317413A1
公开(公告)日：2019-10-17
申请号：US16379267
申请日：2019-04-09
Applicant: ASML Netherlands B.V.
Inventor： Su-Ting CHENG , Sergei Sokolov , Armand Eugene Albert Koolen
Abstract: Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.
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