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公开(公告)号：US11692948B2
公开(公告)日：2023-07-04
申请号：US16963905
申请日：2019-01-08
发明人： Nitish Kumar , Richard Quintanilha , Markus Gerardus Martinus Maria Van Kraaij , Konstantin Tsigutkin , Willem Marie Julia Marcel Coene
IPC分类号： G01N21/956 , G02F1/35 , G03F1/84
CPC分类号： G01N21/956 , G02F1/353 , G03F1/84 , G01N2021/95676 , G01N2201/06113
摘要： A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.
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公开(公告)号：US10437157B2
公开(公告)日：2019-10-08
申请号：US15533309
申请日：2015-11-13
发明人： Scott Anderson Middlebrooks , Markus Gerardus Martinus Maria Van Kraaij , Adrianus Cornelis Matheus Koopman , Stefan Hunsche , Willem Marie Julia Marcel Coene
摘要： A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
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3.发明授权公开(公告)号：US09946167B2
公开(公告)日：2018-04-17
申请号：US14824696
申请日：2015-08-12
发明人： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Willem Marie Julia Marcel Coene , Patrick Warnaar , Michael Kubis
CPC分类号： G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
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公开(公告)号：US09915879B2
公开(公告)日：2018-03-13
申请号：US14710443
申请日：2015-05-12
CPC分类号： G03F7/70633 , G03F7/70683
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets which are for measuring overlay using X-ray scattering and small targets which are for measuring overlay by diffraction of visible radiation. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
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公开(公告)号：US20230296533A1
公开(公告)日：2023-09-21
申请号：US18200947
申请日：2023-05-23
发明人： Nitish KUMAR , Richard Quintanilha , Markus Gerardus Martinus Maria Van Kraaij , Konstantin Tsigutkin , Willem Marie Julia Marcel Coene
IPC分类号： G01N21/956 , G02F1/35 , G03F1/84
CPC分类号： G01N21/956 , G02F1/353 , G03F1/84 , G01N2021/95676 , G01N2201/06113
摘要： A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.
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公开(公告)号：US10234384B2
公开(公告)日：2019-03-19
申请号：US15449367
申请日：2017-03-03
摘要： Disclosed is a method of obtaining data describing an object structure. The method comprising the steps of: (a) illuminating the object structure with illuminating radiation; (b) modulating the phase of the illuminating radiation after scattering by the object structure, the modulation comprising applying a first phase factor dependent upon at least one controllable parameter and an aberration function having a form of a subadditive function of a vector norm; (c) capturing a plurality of intensity patterns, wherein each intensity pattern corresponds to a unique value of the at least one controllable parameter; and (d) reconstructing the data describing the object structure based on the plurality of intensity patterns. Also disclosed are corresponding inspection and lithographic apparatuses, a method of manufacturing devices and a computer program.
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7.发明申请公开(公告)号：US20180224753A1
公开(公告)日：2018-08-09
申请号：US15875156
申请日：2018-01-19
发明人： Simon Gijsbert Josephus MATHIJSSEN , Sander Bas Roobol , Nan Lin , Willem Marie Julia Marcel Coene , ArIe Jeffrey Den Boef
CPC分类号： G03F7/70633 , G01B11/272 , G01N21/4788 , G01N21/956 , G03F7/70525 , G03F7/70625 , G03F7/7085 , G03F9/7069 , G03F9/7088
摘要： Target structures such as overlay gratings (Ta and Tb) are formed on a substrate (W) by a lithographic process. The first target is illuminated with a spot of first radiation (456a, Sa) and simultaneously the second target is illuminated with a spot of second radiation (456b, Sb). A sensor (418) detects at different locations, portions (460x−, 460x+) of said first radiation that have been diffracted in a first direction by features of the first target and portions (460y−, 460y+) of said second radiation that have been diffracted in a second direction by features of the second target. Asymmetry in X and Y directions can be detected simultaneously, reducing the time required for overlay measurements in X and Y. The two spots of radiation at soft x-ray wavelength can be generated simply by exciting two locations (710a, 710b) in a higher harmonic generation (HHG) radiation source or inverse Compton scattering source.
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公开(公告)号：US12007700B2
公开(公告)日：2024-06-11
申请号：US17856213
申请日：2022-07-01
发明人： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
CPC分类号： G03F7/7085 , G01B11/02 , G01B11/0625 , G01N21/4788 , G01N21/9501 , G03F7/70158 , G03F7/705 , G03F7/70625 , G03F7/70633 , G03F9/7088 , G01B2210/56
摘要： Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US11720029B2
公开(公告)日：2023-08-08
申请号：US17497207
申请日：2021-10-08
发明人： Scott Anderson Middlebrooks , Markus Gerardus Martinus Maria Van Kraaij , Adrianus Cornelis Matheus Koopman , Stefan Hunsche , Willem Marie Julia Marcel Coene
CPC分类号： G03F7/705 , G03F7/7065 , G03F7/70625 , G03F7/70633 , G06T7/12 , G06T7/149 , G06T7/60 , G06T2207/10061 , G06T2207/20161 , G06T2207/30148
摘要： A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
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10.发明授权公开(公告)号：US11415900B2
公开(公告)日：2022-08-16
申请号：US17022910
申请日：2020-09-16
发明人： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
摘要： Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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