公开(公告)号：US20240274407A1

公开(公告)日：2024-08-15

申请号：US18168168

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kelvin CHAN ,  Kai WU ,  Mingrui ZHAO ,  David PETERSON ,  Ping-Hwa HSIEH

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32743 ,  H01L21/02315

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process where the differential inhibition treatment process includes exposing a substrate to the effluent of a treatment plasma from a halogen free nitrogen-containing gas and a halogen-containing gas.

公开(公告)号：US20240047268A1

公开(公告)日：2024-02-08

申请号：US18353447

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Xi CEN ,  Dixiong WANG ,  Mingrui ZHAO ,  Yang LI ,  Kai WU

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

公开(公告)号：US20230374660A1

公开(公告)日：2023-11-23

申请号：US17663695

申请日：2022-05-17

Applicant: Applied Materials, Inc.

Inventor： Harpreet SINGH ,  Jallepally RAVI ,  Zubin HUANG ,  Manjunatha KOPPA ,  Sandesh YADAMANE ,  Srinivas TOKUR MOHANA ,  Shreyas PATIL SHANTHAVEERASWAMY ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO

IPC: C23C16/455 ,  C23C16/06 ,  H01L21/285

CPC classification number: C23C16/45561 ,  C23C16/06 ,  H01L21/28568 ,  C23C16/45591

Abstract: A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to the processing chamber through the annular plate and the lid plate. The substrate processing system includes a center manifold that is coupled to the lid plate.

公开(公告)号：US20230369113A1

公开(公告)日：2023-11-16

申请号：US18300280

申请日：2023-04-13

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kai WU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L23/5226 ,  H01L23/53266 ,  H01L21/76876 ,  H01L21/76843

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen trifluoride-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen trifluoride-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

公开(公告)号：US20230290679A1

公开(公告)日：2023-09-14

申请号：US17654077

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  H01L23/532 ,  C23C16/14

CPC classification number: H01L21/76876 ,  H01L23/53261 ,  H01L23/53266 ,  H01L21/76846 ,  C23C16/14 ,  H01L21/28568

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US20220336274A1

公开(公告)日：2022-10-20

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20220130724A1

公开(公告)日：2022-04-28

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20180315650A1

公开(公告)日：2018-11-01

申请号：US15498024

申请日：2017-04-26

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Feiyue MA ,  Yu LEI ,  Kai WU ,  Mehul B. NAIK ,  Zhiyuan WU ,  Vikash BANTHIA ,  Hua AI

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257

Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.

公开(公告)号：US20250038051A1

公开(公告)日：2025-01-30

申请号：US18908747

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  C23C16/14 ,  H01L21/285 ,  H01L23/532

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US20240209500A1

公开(公告)日：2024-06-27

申请号：US18557675

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Wei Min CHAN ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO ,  Michael C. KUTNEY ,  Kazuya DAITO ,  Harpreet SINGH

IPC: C23C16/44 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/285 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/4405 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process.