公开(公告)号：US20230374660A1

公开(公告)日：2023-11-23

申请号：US17663695

申请日：2022-05-17

Applicant: Applied Materials, Inc.

Inventor： Harpreet SINGH ,  Jallepally RAVI ,  Zubin HUANG ,  Manjunatha KOPPA ,  Sandesh YADAMANE ,  Srinivas TOKUR MOHANA ,  Shreyas PATIL SHANTHAVEERASWAMY ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO

IPC: C23C16/455 ,  C23C16/06 ,  H01L21/285

CPC classification number: C23C16/45561 ,  C23C16/06 ,  H01L21/28568 ,  C23C16/45591

Abstract: A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to the processing chamber through the annular plate and the lid plate. The substrate processing system includes a center manifold that is coupled to the lid plate.

公开(公告)号：US20240209500A1

公开(公告)日：2024-06-27

申请号：US18557675

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Wei Min CHAN ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO ,  Michael C. KUTNEY ,  Kazuya DAITO ,  Harpreet SINGH

IPC: C23C16/44 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/285 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/4405 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process.

公开(公告)号：US20220010431A1

公开(公告)日：2022-01-13

申请号：US16923403

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Kazuya DAITO ,  Ravi JALLEPALLY ,  Harpreet SINGH

IPC: C23C16/455

Abstract: A method and apparatus for producing a gas distribution apparatus are described herein. More specifically, a method and apparatus for producing triple-channel gas distribution apparatus is described herein. The gas distribution apparatus described herein includes an upper plate, a middle plate, and a lower plate. The middle plate and the lower plate are machined before all of the upper plate, the middle plate, and the lower plate are bonded. Additional machining is then performed on the gas distribution apparatus. The gas distribution apparatus is used to distribute three or more process gases into a processing chamber.

公开(公告)号：US20240222128A1

公开(公告)日：2024-07-04

申请号：US18558388

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Mingrui ZHAO ,  Peiqi WANG ,  Kai WU ,  Harpreet SINGH ,  Michael C. KUTNEY

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC classification number: H01L21/28506 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/52 ,  H01L21/76879

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.