公开(公告)号：US20250038051A1

公开(公告)日：2025-01-30

申请号：US18908747

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  C23C16/14 ,  H01L21/285 ,  H01L23/532

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US20220359279A1

公开(公告)日：2022-11-10

申请号：US17316649

申请日：2021-05-10

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Mingrui ZHAO ,  Peiqi WANG ,  Wei Min CHAN ,  Kai WU ,  Yi LUO ,  Liqi WU

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/06

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

公开(公告)号：US20230290679A1

公开(公告)日：2023-09-14

申请号：US17654077

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  H01L23/532 ,  C23C16/14

CPC classification number: H01L21/76876 ,  H01L23/53261 ,  H01L23/53266 ,  H01L21/76846 ,  C23C16/14 ,  H01L21/28568

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.