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公开(公告)号:US20240321827A1
公开(公告)日:2024-09-26
申请号:US18474158
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Omar Zia , Thomas D Burd , Kevin Gillespie , Samuel Naffziger , Richard Schultz , Raja Swaminathan , Srividhya Venkataraman , Yan Wang , John Wuu
IPC: H01L25/065 , H01L23/00 , H01L23/36 , H01L23/48 , H10B80/00
CPC classification number: H01L25/0657 , H01L23/36 , H01L23/481 , H01L24/08 , H01L24/16 , H01L24/80 , H10B80/00 , H01L2224/08145 , H01L2224/16145 , H01L2224/80895 , H01L2224/80896
Abstract: A method for circuit die stacking can include providing a first circuit die having a first metal stack, wherein the first circuit die corresponds to a primary thermal source of an integrated circuit including the first circuit die. The method can additionally include providing a second circuit die of the integrated circuit, wherein the second circuit die has a second metal stack and is configured for connection to at least one of a package substrate or an additional die. The method can also include connecting the first metal stack to the second metal stack. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US20240321668A1
公开(公告)日:2024-09-26
申请号:US18474138
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Thomas D. Burd , Gabriel H. Loh , John Wuu , Kevin Gillespie , Raja Swaminathan , Richard Schultz , Samuel Naffziger , Srividhya Venkataraman , Yan Wang
IPC: H01L23/34 , H01L23/00 , H01L25/065 , H10B80/00
CPC classification number: H01L23/34 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/80 , H01L25/0652 , H10B80/00 , H01L2224/08145 , H01L2224/16225 , H01L2224/32221 , H01L2224/80895 , H01L2224/80896 , H01L2924/1437
Abstract: A method for die pair partitioning can include providing a first circuit die having a first metal stack. The method can additionally include positioning a second circuit die having a second metal stack in a manner that places a temperature sensor in a transistor layer of the second circuit die in planar proximity to at least one hot spot located in an additional transistor layer of the first circuit die. The method can also include connecting the first metal stack of the first circuit die to the second metal stack of the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US11869874B2
公开(公告)日:2024-01-09
申请号:US17121039
申请日:2020-12-14
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: John Wuu , David Johnson
IPC: H01L25/065 , H01L25/18 , H01L23/00 , H02M3/04 , H03K19/20
CPC classification number: H01L25/0657 , H01L24/08 , H01L25/18 , H02M3/04 , H03K19/20 , H01L2224/08146 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565
Abstract: A stacked die system includes at least three dies. A first die has a same design as a second die. The first die includes a first circuit, and the second die includes a corresponding second circuit. A signal is received at the first die and sent to the third die via the second die. The signal is routed through either the first circuit or the second circuit but not both. Accordingly, an operation is performed on the signal prior to the signal reaching the third die but the operation is not performed by both the first circuit and the second circuit.
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公开(公告)号:US20200312389A1
公开(公告)日:2020-10-01
申请号:US16370579
申请日:2019-03-29
Applicant: Advanced Micro Devices, Inc.
Inventor: Srinivas R. Sathu , John Wuu , Russell Schreiber , Martin Piorkowski
IPC: G11C7/22 , G11C11/419
Abstract: A timing circuit includes an input for receiving the control signal from a logic circuit operating with a first supply voltage and an output for supplying a control signal to a circuit operating with a second supply voltage different from the first supply voltage. The timing circuit also includes a plurality of delay elements connected in series between the input and output and supplied with the first supply voltage, and one or more NFET footer transistors that couple respective delay elements to a negative supply rail, the NFET footer transistors having the second supply voltage applied to their gates. A memory apparatus employing such a circuit is provided.
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公开(公告)号:US10783953B2
公开(公告)日:2020-09-22
申请号:US15830176
申请日:2017-12-04
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: John Wuu , Martin Paul Piorkowski
IPC: G11C7/12 , G11C11/419 , G11C11/418
Abstract: A method for operating a memory device includes initiating an access operation to a corresponding row of an array of bit cells of the memory device. Responsive to an expansion mode signal having a first state, the method further includes dynamically operating each column of a plurality of columns of the array to access each bit cell of a corresponding row within the plurality of columns during the access operation. Alternatively, responsive to the expansion mode state signal having a second state different than the first state, the method includes dynamically operating each column of a first subset of columns of the plurality of columns to access each bit cell of a corresponding row within the first subset of columns during the access operation, and maintaining each column of a second subset of columns of the plurality of columns in a static state during the access operation.
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公开(公告)号:US20190393123A1
公开(公告)日:2019-12-26
申请号:US16563077
申请日:2019-09-06
Applicant: Advanced Micro Devices, Inc.
Inventor: John Wuu , Samuel Naffziger , Patrick J. Shyvers , Milind S. Bhagavat , Kaushik Mysore , Brett P. Wilkerson
IPC: H01L23/367 , H01L25/00 , H01L25/065
Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
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公开(公告)号:US20190268086A1
公开(公告)日:2019-08-29
申请号:US15903253
申请日:2018-02-23
Applicant: Advanced Micro Devices, Inc.
Inventor: John Wuu , Samuel Naffziger , Michael K. Ciraula , Russell Schreiber
Abstract: An integrated circuit includes first and second through-silicon via (TSV) circuits and a steering logic circuit. The first TSV circuit has a first TSV and a first multiplexer for selecting between a first TSV data signal received from the first TSV and a first local data signal for transmission to a first TSV output terminal. The second TSV circuit includes a second TSV and a second multiplexer for selecting between a second TSV data signal received from the second TSV and the first local data signal for transmission to a second TSV output terminal. The steering logic circuit controls the first multiplexer to select the first local data signal and the second multiplexer to select the second TSV data signal in a first mode, and the first multiplexer to select the first TSV data signal and the second multiplexer to select the first local data signal in a second mode.
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公开(公告)号:US09053257B2
公开(公告)日:2015-06-09
申请号:US13668705
申请日:2012-11-05
Applicant: Advanced Micro Devices, Inc.
Inventor: Russell Schreiber , John Wuu , Keith Kasprak
CPC classification number: G06F17/50 , G06F13/1689 , G06F13/4291 , G06F17/5045 , G06F2217/62 , H03K19/00 , H05K3/00
Abstract: An integrated circuit (IC) generates clock delay control signals based on its operational voltage level. The clock delay control signals are routed to corresponding clock gating logic that controls the synchronous capturing of the outputs of corresponding signal paths. The clock gating logic delays the clock signal used by the corresponding flip-flop in response to an assertion of the corresponding received clock delay control. Thus, the clock signal used to capture the outputs of certain signal paths may be delayed under certain voltage conditions. This selective clock path delay for different signal paths enables the IC to use a higher clock frequency, or more reliably latch the path outputs at a certain clock frequency, even though different signal paths may exhibit different relative path delays under different operating voltage conditions.
Abstract translation: 集成电路(IC)根据其工作电压电平产生时钟延迟控制信号。 时钟延迟控制信号被路由到对应的时钟门控逻辑,其控制相应信号路径的输出的同步捕获。 响应于对应的接收时钟延迟控制的断言,时钟门控逻辑延迟由相应触发器使用的时钟信号。 因此,用于捕获某些信号路径的输出的时钟信号可能在某些电压条件下被延迟。 即使在不同的工作电压条件下不同的信号路径可能表现出不同的相对路径延迟,不同信号路径的这种选择性时钟路径延迟使得IC能够使用更高的时钟频率,或者更可靠地锁定一定时钟频率的路径输出。
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