公开(公告)号：US12249519B2

公开(公告)日：2025-03-11

申请号：US17843938

申请日：2022-06-17

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Priyal Shah ,  Milind S. Bhagavat ,  Brett P. Wilkerson ,  Lei Fu ,  Rahul Agarwal

IPC: H01L21/56 ,  H01L23/31

Abstract: Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package includes a package substrate that has a first side and a second side opposite to the first side. A semiconductor chip is mounted on the first side. Plural metal anchor structures are coupled to the package substrate and project away from the first side. A molding layer is on the package substrate and at least partially encapsulates the semiconductor chip and the anchor structures. The anchor structures terminate in the molding layer and anchor the molding layer to the package substrate.

公开(公告)号：US11911839B2

公开(公告)日：2024-02-27

申请号：US17563830

申请日：2021-12-28

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Priyal Shah ,  Rahul Agarwal ,  Raja Swaminathan ,  Brett P. Wilkerson

IPC: B23K20/02 ,  B23K20/24 ,  H01L23/00 ,  H01L25/065 ,  B23K103/00 ,  B23K101/40

CPC classification number: B23K20/02 ,  B23K20/24 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  B23K2101/40 ,  B23K2103/56 ,  H01L25/0657 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/8003 ,  H01L2224/80031 ,  H01L2224/80048 ,  H01L2224/80051 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.

公开(公告)号：US11804479B2

公开(公告)日：2023-10-31

申请号：US16586309

申请日：2019-09-27

Applicant: Advanced Micro Devices, Inc.

Inventor： John J. Wuu ,  Milind S. Bhagavat ,  Brett P. Wilkerson ,  Rahul Agarwal

IPC: H01L25/18 ,  H01L23/48 ,  H01L23/528 ,  H01L23/00

CPC classification number: H01L25/18 ,  H01L23/481 ,  H01L23/528 ,  H01L24/05 ,  H01L24/08 ,  H01L2224/0557 ,  H01L2224/08146

Abstract: Systems, apparatuses, and methods for routing traffic through vertically stacked semiconductor dies are disclosed. A first semiconductor die has a second die stacked vertically on top of it in a three-dimensional integrated circuit. The first die includes a through silicon via (TSV) interconnect that does not traverse the first die. The first die includes one or more metal layers above the TSV, which connect to a bonding pad interface through a bonding pad via. If the signals transferred through the TSV of the first die are shared by the second die, then the second die includes a TSV aligned with the bonding pad interface of the first die. If these signals are not shared by the second die, then the second die includes an insulated portion of a wafer backside aligned with the bonding pad interface.

公开(公告)号：US20230307405A1

公开(公告)日：2023-09-28

申请号：US17656539

申请日：2022-03-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Lei Fu ,  Raja Swaminathan ,  Brett P. Wilkerson

IPC: H01L23/00

CPC classification number: H01L24/24 ,  H01L24/19 ,  H01L24/20 ,  H01L24/25 ,  H01L24/16 ,  H01L24/73 ,  H01L2924/37001 ,  H01L2924/1434 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1427 ,  H01L2924/14252 ,  H01L2224/215 ,  H01L2224/24137 ,  H01L2224/24101 ,  H01L2224/25175 ,  H01L2224/73209 ,  H01L2224/16137 ,  H01L25/0655

Abstract: An electronic device can include a first die, a second die, and an interconnect. The first die or the second die has a principal function as a power module or a memory. The first die includes a first bond pad, and the second die includes a second bond pad. The device sides of the first and second dies are along the same sides as the first and second bond pads. In an embodiment, the first die and the second die are in a chip first, die face-up configuration. The first and the second bond pads are electrically connected along a first solderless connection that includes the interconnect. In another embodiment, each material within the electrical connection between the first and the second bond pads has a flow point or melting point temperature of at least 300° C.

公开(公告)号：US11742301B2

公开(公告)日：2023-08-29

申请号：US16544021

申请日：2019-08-19

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Rahul Agarwal ,  Milind S. Bhagavat ,  Priyal Shah ,  Chia-Hao Cheng ,  Brett P. Wilkerson ,  Lei Fu

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/214 ,  H01L2924/3511 ,  H01L2924/35121

Abstract: Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package is provided that includes a fan-out redistribution layer (RDL) structure that has plural stacked polymer layers, plural metallization layers, plural conductive vias interconnecting adjacent metallization layers of the metallization layers, and plural rivets configured to resist delamination of one or more of the polymer layers. Each of the plural rivets includes a first head, a second head and a shank connected between the first head and the second head. The first head is part of one of the metallization layers. The shank includes at least one of the conductive vias and at least one part of another of the metallization layers.

公开(公告)号：US11676940B2

公开(公告)日：2023-06-13

申请号：US17003113

申请日：2020-08-26

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Lei Fu ,  Brett P. Wilkerson ,  Rahul Agarwal

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L25/0655 ,  H01L23/5381 ,  H01L23/5389 ,  H01L24/13 ,  H01L2225/06541

Abstract: A chip for hybrid bonded interconnect bridging for chiplet integration, the chip comprising: a first chiplet; a second chiplet; an interconnecting die coupled to the first chiplet and the second chiplet through a hybrid bond.

公开(公告)号：US11437359B2

公开(公告)日：2022-09-06

申请号：US16799243

申请日：2020-02-24

Applicant: Advanced Micro Devices, Inc.

Inventor： Brett P. Wilkerson ,  Milind S. Bhagavat ,  Rahul Agarwal ,  Dmitri Yudanov

IPC: H01L25/18 ,  H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L23/48

Abstract: A method for manufacturing a three-dimensional integrated circuit includes attaching a first side of a first die to a first carrier wafer. The method includes preparing a second side of the first die to generate a prepared second side of the first die. The method includes attaching the prepared second side of the first die to a second carrier wafer. The method includes removing the first carrier wafer from the first side of the first die to form a transitional three-dimensional integrated circuit. The method includes attaching a third carrier wafer to a first side of the transitional three-dimensional integrated circuit. The method includes attaching a first side of the second die to a second side of the transitional three-dimensional integrated circuit.

公开(公告)号：US20190393123A1

公开(公告)日：2019-12-26

申请号：US16563077

申请日：2019-09-06

Applicant: Advanced Micro Devices, Inc.

Inventor： John Wuu ,  Samuel Naffziger ,  Patrick J. Shyvers ,  Milind S. Bhagavat ,  Kaushik Mysore ,  Brett P. Wilkerson

IPC: H01L23/367 ,  H01L25/00 ,  H01L25/065

Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.

公开(公告)号：US20230197619A1

公开(公告)日：2023-06-22

申请号：US17556346

申请日：2021-12-20

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Gabriel H LOH ,  Raja Swaminathan ,  Rahul Agarwal ,  Brett P. Wilkerson

IPC: H01L23/538 ,  G05F1/575 ,  H01L25/065 ,  H01L27/06

CPC classification number: H01L23/5384 ,  G05F1/575 ,  H01L23/5385 ,  H01L23/5386 ,  H01L25/0657 ,  H01L27/0688

Abstract: A semiconductor package includes a package substrate having a first surface and an opposing second surface, and further includes an integrated circuit (IC) die disposed at the second surface and having a third surface facing the second surface and an opposing fourth surface. The IC die has a first region comprising one or more metal layers and circuit components for one or more functions of the IC die and a second region offset from the first region in a direction parallel with the third and fourth surfaces. The semiconductor package further includes a voltage regulator disposed at the fourth surface in the second region and having an input configured to receive a supply voltage and an output configured to provide a regulated voltage, and also includes a conductive path coupling the output of the voltage regulator to a voltage input of circuitry of the IC die.

公开(公告)号：US20230187364A1

公开(公告)日：2023-06-15

申请号：US17644191

申请日：2021-12-14

Applicant: Advanced Micro Devices, Inc.

Inventor： Chia-Hao Cheng ,  Kong Toon Ng ,  Rahul Agarwal ,  Brett P. Wilkerson

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L23/5384 ,  H01L21/486

Abstract: An embodiment of a semiconductor chip device can include a molding layer having a first side and a second side, an interconnect chip at least partially encased in the molding layer, the interconnect chip comprising a through substrate via (TSV) that extends through the interconnect chip, an insulating layer positioned on the first side of the molding layer, and a conductive structure that is positioned vertically below the interconnect chip and extends through the insulating layer, wherein the conductive structure is electrically coupled to the TSV.