SEMICONDUCTOR CHIP DEVICE
    7.
    发明公开

    公开(公告)号:US20230187364A1

    公开(公告)日:2023-06-15

    申请号:US17644191

    申请日:2021-12-14

    CPC classification number: H01L23/5384 H01L21/486

    Abstract: An embodiment of a semiconductor chip device can include a molding layer having a first side and a second side, an interconnect chip at least partially encased in the molding layer, the interconnect chip comprising a through substrate via (TSV) that extends through the interconnect chip, an insulating layer positioned on the first side of the molding layer, and a conductive structure that is positioned vertically below the interconnect chip and extends through the insulating layer, wherein the conductive structure is electrically coupled to the TSV.

    Integrated circuit package with integrated voltage regulator

    公开(公告)号:US11011466B2

    公开(公告)日:2021-05-18

    申请号:US16367731

    申请日:2019-03-28

    Abstract: Various semiconductor chip devices and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a first redistribution layer (RDL) structure having a first plurality of conductor traces, a first molding layer on the first RDL structure, plural conductive pillars in the first molding layer, each of the conductive pillars including a first end and a second end, a second RDL structure on the first molding layer, the second RDL structure having a second plurality of conductor traces, and wherein some of the conductive pillars are electrically connected between some of the first plurality of conductor traces and some of the second plurality of conductor traces to provide a first inductor coil.

    FAN-OUT PACKAGE WITH REINFORCING RIVETS

    公开(公告)号:US20210057352A1

    公开(公告)日:2021-02-25

    申请号:US16544021

    申请日:2019-08-19

    Abstract: Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package is provided that includes a fan-out redistribution layer (RDL) structure that has plural stacked polymer layers, plural metallization layers, plural conductive vias interconnecting adjacent metallization layers of the metallization layers, and plural rivets configured to resist delamination of one or more of the polymer layers. Each of the plural rivets includes a first head, a second head and a shank connected between the first head and the second head. The first head is part of one of the metallization layers. The shank includes at least one of the conductive vias and at least one part of another of the metallization layers.

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