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公开(公告)号:US20240321702A1
公开(公告)日:2024-09-26
申请号:US18474166
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Yan Wang , Kevin Gillespie , Samuel Naffziger , Richard Schultz , Raja Swaminathan , Omar Zia , John Wuu
IPC: H01L23/498 , H01L23/00 , H01L23/367 , H01L25/065
CPC classification number: H01L23/49822 , H01L23/3675 , H01L23/49816 , H01L24/05 , H01L24/32 , H01L25/0652 , H01L2224/05009 , H01L2224/05025 , H01L2224/32146 , H01L2224/32165 , H01L2924/1431 , H01L2924/1437 , H01L2924/351
Abstract: A method for providing backside power can include providing a first circuit die having a first metal stack. The method can also include connecting a second metal stack of a second circuit die to the first metal stack of the first circuit die, wherein a backside power delivery network is located in a passivation layer of at least one of the first circuit die or the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US20240321827A1
公开(公告)日:2024-09-26
申请号:US18474158
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Omar Zia , Thomas D Burd , Kevin Gillespie , Samuel Naffziger , Richard Schultz , Raja Swaminathan , Srividhya Venkataraman , Yan Wang , John Wuu
IPC: H01L25/065 , H01L23/00 , H01L23/36 , H01L23/48 , H10B80/00
CPC classification number: H01L25/0657 , H01L23/36 , H01L23/481 , H01L24/08 , H01L24/16 , H01L24/80 , H10B80/00 , H01L2224/08145 , H01L2224/16145 , H01L2224/80895 , H01L2224/80896
Abstract: A method for circuit die stacking can include providing a first circuit die having a first metal stack, wherein the first circuit die corresponds to a primary thermal source of an integrated circuit including the first circuit die. The method can additionally include providing a second circuit die of the integrated circuit, wherein the second circuit die has a second metal stack and is configured for connection to at least one of a package substrate or an additional die. The method can also include connecting the first metal stack to the second metal stack. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US20240321668A1
公开(公告)日:2024-09-26
申请号:US18474138
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Thomas D. Burd , Gabriel H. Loh , John Wuu , Kevin Gillespie , Raja Swaminathan , Richard Schultz , Samuel Naffziger , Srividhya Venkataraman , Yan Wang
IPC: H01L23/34 , H01L23/00 , H01L25/065 , H10B80/00
CPC classification number: H01L23/34 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/80 , H01L25/0652 , H10B80/00 , H01L2224/08145 , H01L2224/16225 , H01L2224/32221 , H01L2224/80895 , H01L2224/80896 , H01L2924/1437
Abstract: A method for die pair partitioning can include providing a first circuit die having a first metal stack. The method can additionally include positioning a second circuit die having a second metal stack in a manner that places a temperature sensor in a transistor layer of the second circuit die in planar proximity to at least one hot spot located in an additional transistor layer of the first circuit die. The method can also include connecting the first metal stack of the first circuit die to the second metal stack of the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US20250112047A1
公开(公告)日:2025-04-03
申请号:US18478746
申请日:2023-09-29
Applicant: Advanced Micro Devices, Inc.
Inventor: Chandra Sekhar Mandalapu , Raja Swaminathan , Liwei Wang , John Wuu
IPC: H01L21/20 , H01L21/683 , H01L23/00
Abstract: A hybrid bonding method includes fabricating plural semiconductor devices in a region of a bottom wafer adjacent to a front surface thereof, fusion bonding the front surface to a carrier substrate, thinning the bottom wafer opposite to the front surface to expose conductive regions of the semiconductor devices, forming a dielectric layer over a backside of the semiconductor devices, forming openings in the dielectric layer to expose the conductive regions, forming metal pads within the openings, dicing the bottom wafer and the carrier substrate to singulate the plural semiconductor devices, bonding the dielectric layer overlying the backside of the semiconductor devices to a dielectric layer overlying a front surface of a top wafer, bonding the metal pads within the openings in the dielectric layer to metal pads overlying the front surface of the top wafer, and removing the carrier substrate from the front surface of the bottom wafer.
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公开(公告)号:US20230197619A1
公开(公告)日:2023-06-22
申请号:US17556346
申请日:2021-12-20
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Gabriel H LOH , Raja Swaminathan , Rahul Agarwal , Brett P. Wilkerson
IPC: H01L23/538 , G05F1/575 , H01L25/065 , H01L27/06
CPC classification number: H01L23/5384 , G05F1/575 , H01L23/5385 , H01L23/5386 , H01L25/0657 , H01L27/0688
Abstract: A semiconductor package includes a package substrate having a first surface and an opposing second surface, and further includes an integrated circuit (IC) die disposed at the second surface and having a third surface facing the second surface and an opposing fourth surface. The IC die has a first region comprising one or more metal layers and circuit components for one or more functions of the IC die and a second region offset from the first region in a direction parallel with the third and fourth surfaces. The semiconductor package further includes a voltage regulator disposed at the fourth surface in the second region and having an input configured to receive a supply voltage and an output configured to provide a regulated voltage, and also includes a conductive path coupling the output of the voltage regulator to a voltage input of circuitry of the IC die.
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公开(公告)号:US12278150B2
公开(公告)日:2025-04-15
申请号:US17490943
申请日:2021-09-30
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Priyal Shah , Brett P. Wilkerson , Raja Swaminathan
IPC: H01L23/053 , H01L21/48 , H01L21/52 , H01L23/367 , H01L23/498
Abstract: A semiconductor package includes a substrate having opposing first and second surfaces as well as a semiconductor chip component disposed at the second surface and having third and fourth opposing surfaces. A package lid structure is affixed to the second surface of the substrate and the fourth surface of the semiconductor chip component, and has a planar component overlying the semiconductor chip component and having a fifth surface facing the fourth surface and an opposing sixth surface. The planar component includes an aperture extending between the fifth surface and the sixth surface so as to expose at least a portion of the fourth surface of the semiconductor chip component. A thermal exchange structure can be mounted on the package lid structure to form a thermal extraction pathway with the semiconductor die component via the aperture, either directly or via an interposing thermally conductive plate.
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公开(公告)号:US12266611B2
公开(公告)日:2025-04-01
申请号:US17084885
申请日:2020-10-30
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Rahul Agarwal , Brett P. Wilkerson , Raja Swaminathan
IPC: H01L23/538 , H01L23/00
Abstract: A semiconductor module includes two or more semiconductor dies and an interconnect structure coupled to the two or more semiconductor dies. The interconnect structure implements a plurality of die-to-die connection pathways having a first density and a plurality of fan-out redistribution pathways having a second density that is different from the first density.
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公开(公告)号:US12165981B2
公开(公告)日:2024-12-10
申请号:US17556346
申请日:2021-12-20
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Gabriel H Loh , Raja Swaminathan , Rahul Agarwal , Brett P. Wilkerson
IPC: H01L23/538 , G05F1/575 , H01L25/065 , H01L27/06
Abstract: A semiconductor package includes a package substrate having a first surface and an opposing second surface, and further includes an integrated circuit (IC) die disposed at the second surface and having a third surface facing the second surface and an opposing fourth surface. The IC die has a first region comprising one or more metal layers and circuit components for one or more functions of the IC die and a second region offset from the first region in a direction parallel with the third and fourth surfaces. The semiconductor package further includes a voltage regulator disposed at the fourth surface in the second region and having an input configured to receive a supply voltage and an output configured to provide a regulated voltage, and also includes a conductive path coupling the output of the voltage regulator to a voltage input of circuitry of the IC die.
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公开(公告)号:US20240324248A1
公开(公告)日:2024-09-26
申请号:US18474179
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , ATI Technologies ULC
Inventor: John Wuu , Kevin Gillespie , Samuel Naffziger , Spence Oliver , Rajit Seahra , Regina T. Schmidt , Raja Swaminathan , Omar Zia
IPC: H10B80/00 , H01L23/544 , H01L25/00 , H01L25/18
CPC classification number: H10B80/00 , H01L23/544 , H01L25/18 , H01L25/50 , H01L23/481 , H01L23/5286 , H01L24/06 , H01L24/08 , H01L2223/54433 , H01L2224/06181 , H01L2224/08145
Abstract: A method for die pair partitioning can include providing a circuit die. The method can additionally include providing one or more additional circuit die having one or more fuses positioned therein, wherein the one or more fuses identify the circuit die. The method can also include connecting the one or more additional circuit die to the circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US12276850B2
公开(公告)日:2025-04-15
申请号:US18357376
申请日:2023-07-24
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Brett P. Wilkerson , Raja Swaminathan , Kong Toon Ng , Rahul Agarwal
Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.
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