公开(公告)号：US07494724B2

公开(公告)日：2009-02-24

申请号：US11773294

申请日：2007-07-03

Applicant: Shiho Okuno ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

Inventor： Shiho Okuno ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B32B7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01L43/12 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/12986 ,  Y10T428/325

Abstract: A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.

Abstract translation: 一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体 覆盖掩埋孔的绝缘层的层。 孔径可以具有不大于20nm的开口宽度。 可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时针头的推压被中断。

公开(公告)号：US07443004B2

公开(公告)日：2008-10-28

申请号：US11283873

申请日：2005-11-22

Applicant: Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

Inventor： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC: H01L29/82

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

Abstract: In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

Abstract translation: 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。

公开(公告)号：US07355883B2

公开(公告)日：2008-04-08

申请号：US11006594

申请日：2004-12-08

Applicant: Shiho Okuno ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

Inventor： Shiho Okuno ,  Yuichi Ohsawa ,  Shigeru Haneda ,  Yuzo Kamiguchi ,  Tatsuya Kishi

IPC: G11C11/00

CPC classification number: H01L43/08 ,  B32B7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01L43/12 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/12986 ,  Y10T428/325

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.

Abstract translation: 磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。 绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

公开(公告)号：US20060126230A1

公开(公告)日：2006-06-15

申请号：US11347208

申请日：2006-02-06

Applicant: Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

Inventor： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

Abstract: There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

公开(公告)号：US07061732B2

公开(公告)日：2006-06-13

申请号：US10968979

申请日：2004-10-21

Applicant: Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

Inventor： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3954 ,  G11B2005/0029 ,  G11B2005/3996

Abstract: A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.

公开(公告)号：US06914757B2

公开(公告)日：2005-07-05

申请号：US09961171

申请日：2001-09-24

Applicant: Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

Inventor： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

Abstract: A magnetoresistance effect element includes a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer formed between the magnetization fixed layer and the magnetization free layer. The magnetoresistance effect element has a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, the resistance being detected when a sense current is applied to the film planes of the magnetization fixed layer, the non-magnetic intermediate layer, and the magnetization free layer in a direction substantially perpendicular thereto. The film area of the non-magnetic intermediate layer is smaller than the film area of each of the magnetization fixed layer and the magnetization free layer, the magnetoresistance effect element has a single conductive part with a film area smaller than the film area of each of the magnetoresistance effect element, and the magnetoresistance effect element is configured such that the sense current flows only through the single conductive part.

Abstract translation: 磁阻效应元件包括其中磁化方向基本上固定到一个方向的磁化固定层，其中磁化方向响应于外部磁场而变化的磁化自由层以及形成在其间的非磁性中间层 磁化固定层和无磁化层。 磁阻效应元件具有响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的电阻，当感测电流施加到膜平面时，检测电阻 磁化固定层，非磁性中间层和与磁化自由层基本垂直的方向。 非磁性中间层的膜面积小于磁化固定层和磁化自由层的膜面积，磁阻效应元件具有单个导电部分，其膜面积小于膜面积 磁阻效应元件和磁阻效应元件被构造成使得感测电流仅流过单个导电部件。

公开(公告)号：US20050030676A1

公开(公告)日：2005-02-10

申请号：US10937652

申请日：2004-09-10

Applicant: Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

Inventor： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC: G11B5/39 ,  G01R33/09 ,  G11B5/66 ,  G11B5/33 ,  G11B5/127

CPC classification number: H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

Abstract: Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

Abstract translation: 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US06483673B1

公开(公告)日：2002-11-19

申请号：US09085101

申请日：1998-05-28

Applicant: Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Yuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Hiromi Fuke ,  Junichi Akiyama ,  Kazuhiro Saito

Inventor： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Yuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Hiromi Fuke ,  Junichi Akiyama ,  Kazuhiro Saito

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/0029 ,  G11B2005/3996

Abstract: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.

Abstract translation: GMR元件部分由层叠结构形成，该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成，该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构，该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头，用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。

公开(公告)号：US06395388B1

公开(公告)日：2002-05-28

申请号：US09442032

申请日：1999-11-17

Applicant: Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

Inventor： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

IPC: G11B566

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  E05B17/2007 ,  E05B67/36 ,  E05C1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  Y10S428/90 ,  Y10T70/498 ,  Y10T70/5319 ,  Y10T292/1025 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/26 ,  Y10T428/265

Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

Abstract translation: 本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜， 在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件 以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

公开(公告)号：US6111722A

公开(公告)日：2000-08-29

申请号：US71040

申请日：1998-05-04

Applicant: Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Yuichi Ohsawa

Inventor： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Yuichi Ohsawa

IPC: G11B5/39 ,  G11B5/48 ,  G11C11/15 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/488

Abstract: A spin valve GMR element comprises a pair of magnetic biasing films disposed with a predetermined gap and a spin valve GMR film disposed in such a manner that at least both edge portions thereof are stacked on the pair of magnetic biasing films. The spin valve GMR film has a free layer containing a magnetic layer large in its saturation magnetization such as a Co containing magnetic layer. The magnetic biasing film has a laminate film composed of a high saturation magnetization magnetic layer and a magnetic hard layer. The high saturation magnetization layer, for a saturation magnetization Ms.sup.free of a free layer and a saturation magnetization of Ms.sup.hard of a magnetic hard layer, has a saturation magnetization Ms.sup.high satisfying at least one of Ms.sup.high .gtoreq.Ms.sup.free and Ms.sup.high .gtoreq.Ms.sup.hard. According to such a bias structure, when a spin valve GMR element of an over laid structure is narrowed in its track, Barkhausen noise can be effectively suppressed from occurring.

Abstract translation: 自旋阀GMR元件包括以预定间隙设置的一对磁偏置膜和以至少两个边缘部分堆叠在一对磁偏置膜上的方式设置的自旋阀GMR膜。 自旋阀GMR膜具有包含其饱和磁化强度大的含有Co的磁性层的磁性层的自由层。 磁偏置膜具有由高饱和磁化磁化层和磁性硬质层构成的层叠膜。 高饱和磁化层，对于磁性硬层的自由层的饱和磁化强度Msfree和Mshard的饱和磁化强度，具有满足Mshigh> / = Msfree和Mshigh> / = Mshard中的至少一个的饱和磁化强度Mshigh。 根据这种偏压结构，当过度铺设结构的自旋阀GMR元件在其轨道上变窄时，可以有效地抑制巴克豪森噪声的发生。